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PJD25N03_L2_00001 PJD25N03_L2_00001 PanJit Semiconductor PJD25N03.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 100A; 25W; TO252AA
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 100A
Drain-source voltage: 30V
Drain current: 25A
Gate charge: 4.3nC
On-state resistance: 33mΩ
Power dissipation: 25W
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252AA
Kind of channel: enhancement
auf Bestellung 4000 Stücke:
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114+0.63 EUR
174+0.41 EUR
254+0.28 EUR
295+0.24 EUR
500+0.22 EUR
Mindestbestellmenge: 114
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PJD25N06A-AU_L2_000A1 PanJit Semiconductor PJD25N06A-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJD25N06A_L2_00001 PJD25N06A_L2_00001 PanJit Semiconductor PJD25N06A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 40W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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107+0.67 EUR
157+0.46 EUR
215+0.33 EUR
500+0.28 EUR
1000+0.26 EUR
3000+0.23 EUR
6000+0.22 EUR
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PJD25N06A_L2_00001 PJD25N06A_L2_00001 PanJit Semiconductor PJD25N06A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 40W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
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157+0.46 EUR
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500+0.28 EUR
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PJD25N10A_L2_00601 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJD30N04S-AU_L2_002A1 PanJit Semiconductor PJD30N04S-AU Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 43A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 43A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJD35N06A_L2_00601 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; TO252AA
Polarisation: unipolar
Case: TO252AA
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Drain current: 35A
Drain-source voltage: 60V
Gate-source voltage: 20V
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PJD35P03_L2_00001 PJD35P03_L2_00001 PanJit Semiconductor PJD35P03.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -35A; Idm: -140A; 35W; TO252AA
Polarisation: unipolar
Case: TO252AA
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: -140A
Drain current: -35A
Drain-source voltage: -30V
Gate charge: 11nC
On-state resistance: 30mΩ
Power dissipation: 35W
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
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150+0.48 EUR
218+0.33 EUR
250+0.29 EUR
500+0.26 EUR
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PJD35P03_L2_00001 PJD35P03_L2_00001 PanJit Semiconductor PJD35P03.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -35A; Idm: -140A; 35W; TO252AA
Polarisation: unipolar
Case: TO252AA
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: -140A
Drain current: -35A
Drain-source voltage: -30V
Gate charge: 11nC
On-state resistance: 30mΩ
Power dissipation: 35W
Gate-source voltage: ±20V
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150+0.48 EUR
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250+0.29 EUR
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PJD40N04_L2_00601 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJD40N06A-AU_L2_000A1 PanJit Semiconductor PJD40N06A-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; TO252AA
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 40A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
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PJD40N06A_L2_00601 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; TO252AA
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 40A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Polarisation: unipolar
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PJD40P06A-AU_L2_002A1 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 39A; TO252AA
Case: TO252AA
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 20V
Drain current: 39A
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Application: automotive industry
Produkt ist nicht verfügbar
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PJD45N06A_L2_00001 PanJit Semiconductor PJx45N06A.pdf PJD45N06A-L2 SMD N channel transistors
auf Bestellung 239 Stücke:
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206+0.35 EUR
218+0.33 EUR
9000+0.32 EUR
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PJD50N04-AU_L2_000A1 PanJit Semiconductor PJD50N04-AU Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJD50N04V-AU_L2_002A1 PanJit Semiconductor PJD50N04V-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJD50P06A-AU_L2_002A1 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 49A; TO252AA
Case: TO252AA
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 49A
Gate-source voltage: 20V
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
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PJD60N06SA-AU_L2_006A1 PanJit Semiconductor PJD60N06SA-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 66A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 66A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJD60P04E-AU_L2_006A1 PanJit Semiconductor PJD60P04E-AU Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -61A; Idm: -171A; 38W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -61A
Pulsed drain current: -171A
Power dissipation: 38W
Case: TO252AA
Gate-source voltage: ±25V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJD80N03_L2_00001 PanJit Semiconductor PJx80N03.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJD90P03E-AU_L2_006A1 PanJit Semiconductor PJD90P03E-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -88A; Idm: -219A; 40W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -88A
Pulsed drain current: -219A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±25V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJE138K_R1_00001 PanJit Semiconductor PJE138K.pdf PJE138K-R1 SMD N channel transistors
auf Bestellung 3089 Stücke:
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277+0.26 EUR
951+0.075 EUR
1007+0.071 EUR
2000+0.068 EUR
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PJE5V0U8TB-AU_R1_000A1 PJE5V0U8TB-AU_R1_000A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS array; 5.8÷10.2V; unidirectional; SOT523; reel,tape
Type of diode: TVS array
Breakdown voltage: 5.8...10.2V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT523
Max. off-state voltage: 5V
Kind of package: reel; tape
Application: automotive industry
Version: ESD
Leakage current: 1µA
Capacitance: 0.8pF
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4000+0.14 EUR
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PJE5V0U8TB-AU_R1_000A1 PJE5V0U8TB-AU_R1_000A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS array; 5.8÷10.2V; unidirectional; SOT523; reel,tape
Type of diode: TVS array
Breakdown voltage: 5.8...10.2V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT523
Max. off-state voltage: 5V
Kind of package: reel; tape
Application: automotive industry
Version: ESD
Leakage current: 1µA
Capacitance: 0.8pF
Anzahl je Verpackung: 1 Stücke
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500+0.33 EUR
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4000+0.14 EUR
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PJE8403_R1_00001 PJE8403_R1_00001 PanJit Semiconductor PJE8403.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -600mA; Idm: -2.4A; 300mW
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: SOT523
Drain-source voltage: -20V
Pulsed drain current: -2.4A
Drain current: -0.6A
Gate charge: 2.2nC
On-state resistance: 0.6Ω
Power dissipation: 0.3W
Gate-source voltage: ±8V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
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250+0.29 EUR
414+0.17 EUR
658+0.11 EUR
782+0.092 EUR
807+0.089 EUR
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PJE8403_R1_00001 PJE8403_R1_00001 PanJit Semiconductor PJE8403.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -600mA; Idm: -2.4A; 300mW
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: SOT523
Drain-source voltage: -20V
Pulsed drain current: -2.4A
Drain current: -0.6A
Gate charge: 2.2nC
On-state resistance: 0.6Ω
Power dissipation: 0.3W
Gate-source voltage: ±8V
Polarisation: unipolar
auf Bestellung 3995 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
414+0.17 EUR
658+0.11 EUR
782+0.092 EUR
807+0.089 EUR
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PJE8406TB89_R1_00701 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 800mA; SC89
Kind of channel: enhancement
Mounting: SMD
Case: SC89
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 0.8A
Gate-source voltage: 12V
Drain-source voltage: 20V
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PJE8407_R1_00001 PanJit Semiconductor PJE8407.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; SOT523
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: SOT523
Drain current: 0.5A
Gate-source voltage: 10V
Drain-source voltage: 20V
Polarisation: unipolar
Produkt ist nicht verfügbar
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PJE8408_R1_00001 PanJit Semiconductor PJE8408.pdf PJE8408-R1 SMD N channel transistors
auf Bestellung 3825 Stücke:
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407+0.18 EUR
715+0.1 EUR
758+0.094 EUR
794+0.09 EUR
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PJEC12VM1TA-AU_R1_000A1 PanJit Semiconductor PJEC12VM1TA-AU_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS; SOT23
Application: automotive industry
Type of diode: TVS
Case: SOT23
Mounting: SMD
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PJEC12VM1TA_R1_00001 PanJit Semiconductor PJEC12VM1TA Category: Protection diodes - arrays
Description: Diode: TVS; SOT23
Type of diode: TVS
Case: SOT23
Mounting: SMD
Produkt ist nicht verfügbar
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PJEC2415VM1WS-AU_R1_000A1 PJEC2415VM1WS-AU_R1_000A1 PanJit Semiconductor PJEC2415VM1WS-AU Category: Protection diodes - arrays
Description: Diode: TVS; 17.1÷30.3V; 160W; asymmetric,bidirectional; SOD323
Semiconductor structure: asymmetric; bidirectional
Application: automotive industry
Version: ESD
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Type of diode: TVS
Capacitance: 17pF
Leakage current: 50nA
Number of channels: 1
Max. off-state voltage: 15...24V
Breakdown voltage: 17.1...30.3V
Peak pulse power dissipation: 160W
Produkt ist nicht verfügbar
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PJF18N20_T0_00001 PanJit Semiconductor PJx18N20.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; ITO220AB
Case: ITO220AB
Mounting: SMD
Drain current: 18A
Gate-source voltage: 20V
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Produkt ist nicht verfügbar
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PJGBLC03C_R1_00001 PanJit Semiconductor PJGBLC03_C24C_SERIES.pdf PJGBLC03C-R1 Protection diodes - arrays
auf Bestellung 4020 Stücke:
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180+0.4 EUR
562+0.13 EUR
596+0.12 EUR
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PJGBLC05C_R1_00001 PanJit Semiconductor PJGBLC03_C24C_SERIES.pdf PJGBLC05C-R1 Protection diodes - arrays
auf Bestellung 1486 Stücke:
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178+0.4 EUR
596+0.12 EUR
633+0.11 EUR
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PJGBLC12C_R1_00001 PanJit Semiconductor PJGBLC03_C24C_SERIES.pdf PJGBLC12C-R1 Protection diodes - arrays
auf Bestellung 4655 Stücke:
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PJGBLC24C_R1_00001 PanJit Semiconductor PJGBLC03_C24C_SERIES.pdf PJGBLC24C-R1 Protection diodes - arrays
auf Bestellung 4430 Stücke:
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596+0.12 EUR
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PJL9407_R2_00001 PanJit Semiconductor PJL9407-R2 SMD P channel transistors
auf Bestellung 2479 Stücke:
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135+0.53 EUR
468+0.15 EUR
496+0.14 EUR
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PJL9850_R2_00001 PanJit Semiconductor PJL9850.pdf PJL9850-R2 Multi channel transistors
auf Bestellung 5047 Stücke:
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82+0.88 EUR
277+0.26 EUR
293+0.24 EUR
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PJMB125N60FRC_R2_00201 PanJit Semiconductor PJMB125N60FRC Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO263AB
Polarisation: unipolar
Drain current: 30A
Gate-source voltage: 30V
Case: TO263AB
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Produkt ist nicht verfügbar
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PJMB210N65EC_R2_00601 PanJit Semiconductor PJMB210N65EC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 42A
Gate charge: 34nC
Produkt ist nicht verfügbar
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PJMBZ27V-AU_R1_000A1 PJMBZ27V-AU_R1_000A1 PanJit Semiconductor PJMBZ15V-AU_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 25.65÷28.35V; 40W; double,common cathode; SOT23
Type of diode: TVS array
Case: SOT23
Mounting: SMD
Max. off-state voltage: 22V
Semiconductor structure: common cathode; double
Capacitance: 50pF
Kind of package: reel; tape
Leakage current: 50nA
Number of channels: 2
Breakdown voltage: 25.65...28.35V
Peak pulse power dissipation: 40W
Application: automotive industry
Version: ESD
auf Bestellung 2950 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
486+0.15 EUR
613+0.12 EUR
677+0.11 EUR
849+0.084 EUR
1000+0.077 EUR
Mindestbestellmenge: 358
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PJMBZ27V-AU_R1_000A1 PJMBZ27V-AU_R1_000A1 PanJit Semiconductor PJMBZ15V-AU_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 25.65÷28.35V; 40W; double,common cathode; SOT23
Type of diode: TVS array
Case: SOT23
Mounting: SMD
Max. off-state voltage: 22V
Semiconductor structure: common cathode; double
Capacitance: 50pF
Kind of package: reel; tape
Leakage current: 50nA
Number of channels: 2
Breakdown voltage: 25.65...28.35V
Peak pulse power dissipation: 40W
Application: automotive industry
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2950 Stücke:
Lieferzeit 7-14 Tag (e)
358+0.2 EUR
486+0.15 EUR
613+0.12 EUR
677+0.11 EUR
849+0.084 EUR
1000+0.077 EUR
3000+0.066 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
PJMBZ33A-AU_R1_007A1 PanJit Semiconductor pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB6C3115A4D6400D6&compId=PJMBZ5V6A-AU_SER.pdf?ci_sign=f585ee1c43ce1983a9bfbd35e4572630b7b120c6 Category: Protection diodes - arrays
Description: Diode: TVS array; 31.35÷34.65V; 40W; double,common anode; SOT23
Case: SOT23
Version: ESD
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Leakage current: 50nA
Max. off-state voltage: 26V
Breakdown voltage: 31.35...34.65V
Peak pulse power dissipation: 40W
Application: automotive industry
Semiconductor structure: common anode; double
Produkt ist nicht verfügbar
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PJMBZ6V8A-AU_R1_007A1 PanJit Semiconductor pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB6C3115A4D6400D6&compId=PJMBZ5V6A-AU_SER.pdf?ci_sign=f585ee1c43ce1983a9bfbd35e4572630b7b120c6 Category: Protection diodes - arrays
Description: Diode: TVS array; 6.46÷7.14V; 24W; double,common anode; SOT23
Type of diode: TVS array
Breakdown voltage: 6.46...7.14V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 4.5V
Kind of package: reel; tape
Application: automotive industry
Peak pulse power dissipation: 24W
Version: ESD
Leakage current: 0.5µA
Produkt ist nicht verfügbar
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PJMD190N65FR2_L2_00601 PanJit Semiconductor PJMD190N65FR2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMD280N60E1_L2_00601 PanJit Semiconductor PJMD280N60E1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 49.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 49.1W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMD360N60EC_L2_00001 PJMD360N60EC_L2_00001 PanJit Semiconductor PJMD360N60EC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMD580N60E1_L2_00001 PJMD580N60E1_L2_00001 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 54W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 54W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMF060N65FR2_T0_00601 PanJit Semiconductor PJMF060N65FR2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 48.3A; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48.3A
Case: ITO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMF080N65FR2_T0_00601 PanJit Semiconductor PJMF080N65FR2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 29.2A; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 29.2A
Case: ITO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMF099N60EC_T0_00601 PanJit Semiconductor PJMF099N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 88A; 14W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Power dissipation: 14W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 88A
Gate charge: 60nC
Produkt ist nicht verfügbar
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PJMF120N60EC_T0_00001 PJMF120N60EC_T0_00001 PanJit Semiconductor PJMF120N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 33W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 33W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
Produkt ist nicht verfügbar
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PJMF125N60FRC_T0_00601 PanJit Semiconductor PJMF125N60FRC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; ITO220AB
Polarisation: unipolar
Drain current: 29A
Gate-source voltage: 30V
Case: ITO220AB
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: THT
Produkt ist nicht verfügbar
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PJMF130N65EC_T0_006A1 PanJit Semiconductor Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 29A; Idm: 63A; 14W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 29A
Pulsed drain current: 63A
Power dissipation: 14W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMF190N60E1_T0_00001 PanJit Semiconductor PJMF190N60E1.pdf PJMF190N60E1-T0 THT N channel transistors
auf Bestellung 43 Stücke:
Lieferzeit 7-14 Tag (e)
20+3.63 EUR
36+1.99 EUR
39+1.87 EUR
2000+1.82 EUR
Mindestbestellmenge: 20
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PJMF190N65FR2_T0_00601 PanJit Semiconductor PJMF190N65FR2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.6A; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.6A
Case: ITO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMF210N65EC_T0_00601 PJMF210N65EC_T0_00601 PanJit Semiconductor PJMF210N65EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 32W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 32W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Gate charge: 34nC
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.96 EUR
44+1.64 EUR
Mindestbestellmenge: 25
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PJMF280N60E1_T0_00001 PJMF280N60E1_T0_00001 PanJit Semiconductor PJMF280N60E1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 34W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMF280N65E1_T0_00001 PJMF280N65E1_T0_00001 PanJit Semiconductor PJMF280N65E1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; Idm: 41.4A; 35.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 35.7W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJD25N03_L2_00001 PJD25N03.pdf
PJD25N03_L2_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 100A; 25W; TO252AA
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 100A
Drain-source voltage: 30V
Drain current: 25A
Gate charge: 4.3nC
On-state resistance: 33mΩ
Power dissipation: 25W
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252AA
Kind of channel: enhancement
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
114+0.63 EUR
174+0.41 EUR
254+0.28 EUR
295+0.24 EUR
500+0.22 EUR
Mindestbestellmenge: 114
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PJD25N06A-AU_L2_000A1 PJD25N06A-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJD25N06A_L2_00001 PJD25N06A.pdf
PJD25N06A_L2_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 40W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1537 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
107+0.67 EUR
157+0.46 EUR
215+0.33 EUR
500+0.28 EUR
1000+0.26 EUR
3000+0.23 EUR
6000+0.22 EUR
Mindestbestellmenge: 107
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PJD25N06A_L2_00001 PJD25N06A.pdf
PJD25N06A_L2_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 40W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1537 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
157+0.46 EUR
215+0.33 EUR
500+0.28 EUR
1000+0.26 EUR
Mindestbestellmenge: 107
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PJD25N10A_L2_00601
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJD30N04S-AU_L2_002A1 PJD30N04S-AU
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 43A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 43A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJD35N06A_L2_00601
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; TO252AA
Polarisation: unipolar
Case: TO252AA
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Drain current: 35A
Drain-source voltage: 60V
Gate-source voltage: 20V
Produkt ist nicht verfügbar
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PJD35P03_L2_00001 PJD35P03.pdf
PJD35P03_L2_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -35A; Idm: -140A; 35W; TO252AA
Polarisation: unipolar
Case: TO252AA
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: -140A
Drain current: -35A
Drain-source voltage: -30V
Gate charge: 11nC
On-state resistance: 30mΩ
Power dissipation: 35W
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2503 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
100+0.72 EUR
150+0.48 EUR
218+0.33 EUR
250+0.29 EUR
500+0.26 EUR
1000+0.24 EUR
3000+0.22 EUR
Mindestbestellmenge: 100
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PJD35P03_L2_00001 PJD35P03.pdf
PJD35P03_L2_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -35A; Idm: -140A; 35W; TO252AA
Polarisation: unipolar
Case: TO252AA
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: -140A
Drain current: -35A
Drain-source voltage: -30V
Gate charge: 11nC
On-state resistance: 30mΩ
Power dissipation: 35W
Gate-source voltage: ±20V
auf Bestellung 2503 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
150+0.48 EUR
218+0.33 EUR
250+0.29 EUR
500+0.26 EUR
1000+0.24 EUR
Mindestbestellmenge: 100
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PJD40N04_L2_00601
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJD40N06A-AU_L2_000A1 PJD40N06A-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; TO252AA
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 40A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Produkt ist nicht verfügbar
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PJD40N06A_L2_00601
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; TO252AA
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 40A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Polarisation: unipolar
Produkt ist nicht verfügbar
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PJD40P06A-AU_L2_002A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 39A; TO252AA
Case: TO252AA
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 20V
Drain current: 39A
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Application: automotive industry
Produkt ist nicht verfügbar
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PJD45N06A_L2_00001 PJx45N06A.pdf
Hersteller: PanJit Semiconductor
PJD45N06A-L2 SMD N channel transistors
auf Bestellung 239 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
64+1.13 EUR
206+0.35 EUR
218+0.33 EUR
9000+0.32 EUR
Mindestbestellmenge: 64
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PJD50N04-AU_L2_000A1 PJD50N04-AU
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJD50N04V-AU_L2_002A1 PJD50N04V-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJD50P06A-AU_L2_002A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 49A; TO252AA
Case: TO252AA
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 49A
Gate-source voltage: 20V
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
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PJD60N06SA-AU_L2_006A1 PJD60N06SA-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 66A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 66A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJD60P04E-AU_L2_006A1 PJD60P04E-AU
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -61A; Idm: -171A; 38W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -61A
Pulsed drain current: -171A
Power dissipation: 38W
Case: TO252AA
Gate-source voltage: ±25V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJD80N03_L2_00001 PJx80N03.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJD90P03E-AU_L2_006A1 PJD90P03E-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -88A; Idm: -219A; 40W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -88A
Pulsed drain current: -219A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±25V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJE138K_R1_00001 PJE138K.pdf
Hersteller: PanJit Semiconductor
PJE138K-R1 SMD N channel transistors
auf Bestellung 3089 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
277+0.26 EUR
951+0.075 EUR
1007+0.071 EUR
2000+0.068 EUR
Mindestbestellmenge: 277
Im Einkaufswagen  Stück im Wert von  UAH
PJE5V0U8TB-AU_R1_000A1
PJE5V0U8TB-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.8÷10.2V; unidirectional; SOT523; reel,tape
Type of diode: TVS array
Breakdown voltage: 5.8...10.2V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT523
Max. off-state voltage: 5V
Kind of package: reel; tape
Application: automotive industry
Version: ESD
Leakage current: 1µA
Capacitance: 0.8pF
auf Bestellung 19921 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
500+0.33 EUR
1000+0.28 EUR
4000+0.14 EUR
8000+0.093 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
PJE5V0U8TB-AU_R1_000A1
PJE5V0U8TB-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.8÷10.2V; unidirectional; SOT523; reel,tape
Type of diode: TVS array
Breakdown voltage: 5.8...10.2V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT523
Max. off-state voltage: 5V
Kind of package: reel; tape
Application: automotive industry
Version: ESD
Leakage current: 1µA
Capacitance: 0.8pF
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19921 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
186+0.39 EUR
500+0.33 EUR
1000+0.28 EUR
4000+0.14 EUR
8000+0.093 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
PJE8403_R1_00001 PJE8403.pdf
PJE8403_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -600mA; Idm: -2.4A; 300mW
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: SOT523
Drain-source voltage: -20V
Pulsed drain current: -2.4A
Drain current: -0.6A
Gate charge: 2.2nC
On-state resistance: 0.6Ω
Power dissipation: 0.3W
Gate-source voltage: ±8V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3995 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
250+0.29 EUR
414+0.17 EUR
658+0.11 EUR
782+0.092 EUR
807+0.089 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
PJE8403_R1_00001 PJE8403.pdf
PJE8403_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -600mA; Idm: -2.4A; 300mW
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: SOT523
Drain-source voltage: -20V
Pulsed drain current: -2.4A
Drain current: -0.6A
Gate charge: 2.2nC
On-state resistance: 0.6Ω
Power dissipation: 0.3W
Gate-source voltage: ±8V
Polarisation: unipolar
auf Bestellung 3995 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
414+0.17 EUR
658+0.11 EUR
782+0.092 EUR
807+0.089 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
PJE8406TB89_R1_00701
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 800mA; SC89
Kind of channel: enhancement
Mounting: SMD
Case: SC89
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 0.8A
Gate-source voltage: 12V
Drain-source voltage: 20V
Produkt ist nicht verfügbar
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PJE8407_R1_00001 PJE8407.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; SOT523
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: SOT523
Drain current: 0.5A
Gate-source voltage: 10V
Drain-source voltage: 20V
Polarisation: unipolar
Produkt ist nicht verfügbar
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PJE8408_R1_00001 PJE8408.pdf
Hersteller: PanJit Semiconductor
PJE8408-R1 SMD N channel transistors
auf Bestellung 3825 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
407+0.18 EUR
715+0.1 EUR
758+0.094 EUR
794+0.09 EUR
Mindestbestellmenge: 407
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PJEC12VM1TA-AU_R1_000A1 PJEC12VM1TA-AU_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23
Application: automotive industry
Type of diode: TVS
Case: SOT23
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJEC12VM1TA_R1_00001 PJEC12VM1TA
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23
Type of diode: TVS
Case: SOT23
Mounting: SMD
Produkt ist nicht verfügbar
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PJEC2415VM1WS-AU_R1_000A1 PJEC2415VM1WS-AU
PJEC2415VM1WS-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 17.1÷30.3V; 160W; asymmetric,bidirectional; SOD323
Semiconductor structure: asymmetric; bidirectional
Application: automotive industry
Version: ESD
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Type of diode: TVS
Capacitance: 17pF
Leakage current: 50nA
Number of channels: 1
Max. off-state voltage: 15...24V
Breakdown voltage: 17.1...30.3V
Peak pulse power dissipation: 160W
Produkt ist nicht verfügbar
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PJF18N20_T0_00001 PJx18N20.pdf
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; ITO220AB
Case: ITO220AB
Mounting: SMD
Drain current: 18A
Gate-source voltage: 20V
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJGBLC03C_R1_00001 PJGBLC03_C24C_SERIES.pdf
Hersteller: PanJit Semiconductor
PJGBLC03C-R1 Protection diodes - arrays
auf Bestellung 4020 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
180+0.4 EUR
562+0.13 EUR
596+0.12 EUR
Mindestbestellmenge: 180
Im Einkaufswagen  Stück im Wert von  UAH
PJGBLC05C_R1_00001 PJGBLC03_C24C_SERIES.pdf
Hersteller: PanJit Semiconductor
PJGBLC05C-R1 Protection diodes - arrays
auf Bestellung 1486 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
178+0.4 EUR
596+0.12 EUR
633+0.11 EUR
Mindestbestellmenge: 178
Im Einkaufswagen  Stück im Wert von  UAH
PJGBLC12C_R1_00001 PJGBLC03_C24C_SERIES.pdf
Hersteller: PanJit Semiconductor
PJGBLC12C-R1 Protection diodes - arrays
auf Bestellung 4655 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
345+0.21 EUR
596+0.12 EUR
633+0.11 EUR
Mindestbestellmenge: 345
Im Einkaufswagen  Stück im Wert von  UAH
PJGBLC24C_R1_00001 PJGBLC03_C24C_SERIES.pdf
Hersteller: PanJit Semiconductor
PJGBLC24C-R1 Protection diodes - arrays
auf Bestellung 4430 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
345+0.21 EUR
596+0.12 EUR
633+0.11 EUR
Mindestbestellmenge: 345
Im Einkaufswagen  Stück im Wert von  UAH
PJL9407_R2_00001
Hersteller: PanJit Semiconductor
PJL9407-R2 SMD P channel transistors
auf Bestellung 2479 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
135+0.53 EUR
468+0.15 EUR
496+0.14 EUR
Mindestbestellmenge: 135
Im Einkaufswagen  Stück im Wert von  UAH
PJL9850_R2_00001 PJL9850.pdf
Hersteller: PanJit Semiconductor
PJL9850-R2 Multi channel transistors
auf Bestellung 5047 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
82+0.88 EUR
277+0.26 EUR
293+0.24 EUR
Mindestbestellmenge: 82
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PJMB125N60FRC_R2_00201 PJMB125N60FRC
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO263AB
Polarisation: unipolar
Drain current: 30A
Gate-source voltage: 30V
Case: TO263AB
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Produkt ist nicht verfügbar
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PJMB210N65EC_R2_00601 PJMB210N65EC.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 42A
Gate charge: 34nC
Produkt ist nicht verfügbar
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PJMBZ27V-AU_R1_000A1 PJMBZ15V-AU_SERIES.pdf
PJMBZ27V-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 25.65÷28.35V; 40W; double,common cathode; SOT23
Type of diode: TVS array
Case: SOT23
Mounting: SMD
Max. off-state voltage: 22V
Semiconductor structure: common cathode; double
Capacitance: 50pF
Kind of package: reel; tape
Leakage current: 50nA
Number of channels: 2
Breakdown voltage: 25.65...28.35V
Peak pulse power dissipation: 40W
Application: automotive industry
Version: ESD
auf Bestellung 2950 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
486+0.15 EUR
613+0.12 EUR
677+0.11 EUR
849+0.084 EUR
1000+0.077 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
PJMBZ27V-AU_R1_000A1 PJMBZ15V-AU_SERIES.pdf
PJMBZ27V-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 25.65÷28.35V; 40W; double,common cathode; SOT23
Type of diode: TVS array
Case: SOT23
Mounting: SMD
Max. off-state voltage: 22V
Semiconductor structure: common cathode; double
Capacitance: 50pF
Kind of package: reel; tape
Leakage current: 50nA
Number of channels: 2
Breakdown voltage: 25.65...28.35V
Peak pulse power dissipation: 40W
Application: automotive industry
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2950 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
358+0.2 EUR
486+0.15 EUR
613+0.12 EUR
677+0.11 EUR
849+0.084 EUR
1000+0.077 EUR
3000+0.066 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
PJMBZ33A-AU_R1_007A1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB6C3115A4D6400D6&compId=PJMBZ5V6A-AU_SER.pdf?ci_sign=f585ee1c43ce1983a9bfbd35e4572630b7b120c6
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 31.35÷34.65V; 40W; double,common anode; SOT23
Case: SOT23
Version: ESD
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Leakage current: 50nA
Max. off-state voltage: 26V
Breakdown voltage: 31.35...34.65V
Peak pulse power dissipation: 40W
Application: automotive industry
Semiconductor structure: common anode; double
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMBZ6V8A-AU_R1_007A1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB6C3115A4D6400D6&compId=PJMBZ5V6A-AU_SER.pdf?ci_sign=f585ee1c43ce1983a9bfbd35e4572630b7b120c6
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.46÷7.14V; 24W; double,common anode; SOT23
Type of diode: TVS array
Breakdown voltage: 6.46...7.14V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 4.5V
Kind of package: reel; tape
Application: automotive industry
Peak pulse power dissipation: 24W
Version: ESD
Leakage current: 0.5µA
Produkt ist nicht verfügbar
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PJMD190N65FR2_L2_00601 PJMD190N65FR2
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMD280N60E1_L2_00601 PJMD280N60E1.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 49.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 49.1W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMD360N60EC_L2_00001 PJMD360N60EC.pdf
PJMD360N60EC_L2_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMD580N60E1_L2_00001
PJMD580N60E1_L2_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 54W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 54W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMF060N65FR2_T0_00601 PJMF060N65FR2
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 48.3A; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48.3A
Case: ITO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMF080N65FR2_T0_00601 PJMF080N65FR2
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 29.2A; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 29.2A
Case: ITO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMF099N60EC_T0_00601 PJMF099N60EC.pdf
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 88A; 14W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Power dissipation: 14W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 88A
Gate charge: 60nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMF120N60EC_T0_00001 PJMF120N60EC.pdf
PJMF120N60EC_T0_00001
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 33W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 33W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMF125N60FRC_T0_00601 PJMF125N60FRC.pdf
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; ITO220AB
Polarisation: unipolar
Drain current: 29A
Gate-source voltage: 30V
Case: ITO220AB
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMF130N65EC_T0_006A1
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 29A; Idm: 63A; 14W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 29A
Pulsed drain current: 63A
Power dissipation: 14W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMF190N60E1_T0_00001 PJMF190N60E1.pdf
Hersteller: PanJit Semiconductor
PJMF190N60E1-T0 THT N channel transistors
auf Bestellung 43 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
20+3.63 EUR
36+1.99 EUR
39+1.87 EUR
2000+1.82 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
PJMF190N65FR2_T0_00601 PJMF190N65FR2
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.6A; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.6A
Case: ITO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMF210N65EC_T0_00601 PJMF210N65EC.pdf
PJMF210N65EC_T0_00601
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 32W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 32W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Gate charge: 34nC
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.96 EUR
44+1.64 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
PJMF280N60E1_T0_00001 PJMF280N60E1.pdf
PJMF280N60E1_T0_00001
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 34W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMF280N65E1_T0_00001 PJMF280N65E1.pdf
PJMF280N65E1_T0_00001
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; Idm: 41.4A; 35.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 35.7W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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