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PE4312ES_R1_00701 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 13.2V; 8.3A; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Breakdown voltage: 13.2V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD523
Max. off-state voltage: 12V
Leakage current: 1µA
Number of channels: 1
Capacitance: 90pF
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PE4336ES_R1_00701 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 39.6V; 3.3A; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Breakdown voltage: 39.6V
Max. forward impulse current: 3.3A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD523
Max. off-state voltage: 36V
Leakage current: 1µA
Number of channels: 1
Capacitance: 20pF
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PE4724L1Q-AU_R1_002A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 26.4V; 32A; unidirectional; DFN1610-2; Ch: 1
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.28nF
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 24V
Breakdown voltage: 26.4V
Max. forward impulse current: 32A
Application: automotive industry
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PE4724L1Q_R1_00201 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 26.4V; 32A; unidirectional; DFN1610-2; Ch: 1
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.28nF
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 24V
Breakdown voltage: 26.4V
Max. forward impulse current: 32A
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PE4728L1Q-AU_R1_002A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 30V; 27.5A; unidirectional; DFN1610-2; Ch: 1
Type of diode: TVS
Mounting: SMD
Case: DFN1610-2
Semiconductor structure: unidirectional
Breakdown voltage: 30V
Max. forward impulse current: 27.5A
Application: automotive industry
Max. off-state voltage: 28V
Leakage current: 1µA
Capacitance: 0.23nF
Number of channels: 1
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PE9180C1A-AU_R1_007A1 PanJit Semiconductor PE9180C1A-AU.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 100V; 20A; 0.35kW; bidirectional; SOT23; Ch: 2
Type of diode: TVS
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 80V
Breakdown voltage: 100V
Max. forward impulse current: 20A
Semiconductor structure: bidirectional
Case: SOT23
Mounting: SMD
Leakage current: 30nA
Capacitance: 0.6pF
Number of channels: 2
Application: automotive industry
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PEC11SD03M1Q_R1_00501 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Version: ESD
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.19pF
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PEC1605M1Q-AU_R1_005A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 6.8V; 2A; bidirectional; DFN1006-2; Ch: 1
Mounting: SMD
Capacitance: 0.6pF
Application: automotive industry
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Leakage current: 75nA
Case: DFN1006-2
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 6.8V
Max. forward impulse current: 2A
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PEC1605M1Q_R1_00001 PEC1605M1Q_R1_00001 PanJit Semiconductor PEC1605M1Q.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape
Mounting: SMD
Capacitance: 0.6pF
Semiconductor structure: bidirectional
Case: DFN1006-2
Version: ESD
Kind of package: reel; tape
Type of diode: TVS
Leakage current: 75nA
Max. off-state voltage: 5.5V
Breakdown voltage: 6.8...11.2V
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PEC3205C2C_R1_00701 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; bidirectional; SOT323; Ch: 2
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 2
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Semiconductor structure: bidirectional
Case: SOT323
Mounting: SMD
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PEC3205C2E_R1_00701 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; bidirectional; SOT523; Ch: 2
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 2
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Semiconductor structure: bidirectional
Case: SOT523
Mounting: SMD
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PEC3205CS_R1_00701 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 8V; 5A; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 1
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 8V
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
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PEC3205ES-AU_R1_007A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; bidirectional; SOD523; Ch: 1
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 1
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Application: automotive industry
Semiconductor structure: bidirectional
Case: SOD523
Mounting: SMD
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PEC3205ES_R1_00701 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; bidirectional; SOD523; Ch: 1
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 1
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Semiconductor structure: bidirectional
Case: SOD523
Mounting: SMD
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PEC3205M1Q_R1_00201 PanJit Semiconductor PEC3202M1Q Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 5.5÷8V; bidirectional; DFN1006-2; reel,tape
Kind of package: reel; tape
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Max. off-state voltage: 5V
Breakdown voltage: 5.5...8V
Semiconductor structure: bidirectional
Case: DFN1006-2
Version: ESD
Mounting: SMD
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PEC3205S1Q_R1_00001 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; bidirectional; DFN0603-2; Ch: 1
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 1
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Semiconductor structure: bidirectional
Case: DFN0603-2
Mounting: SMD
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PEC33712C2A-AU_R1_000A1 PEC33712C2A-AU_R1_000A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 13.3V; 5A; bidirectional; SOT23; Ch: 2
Semiconductor structure: bidirectional
Application: automotive industry
Case: SOT23
Mounting: SMD
Type of diode: TVS
Leakage current: 1µA
Number of channels: 2
Max. forward impulse current: 5A
Max. off-state voltage: 12V
Breakdown voltage: 13.3V
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PEC33712C2A_R1_00001 PEC33712C2A_R1_00001 PanJit Semiconductor PEC33712C2A.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 8A; asymmetric,bidirectional; ESD
Version: ESD
Semiconductor structure: asymmetric; bidirectional
Case: SOT23
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Capacitance: 35pF
Leakage current: 1µA
Number of channels: 2
Max. forward impulse current: 8A
Max. off-state voltage: 7...12V
Breakdown voltage: 7.5...13.3V
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PEC4105C2A_R1_00501 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 20A; bidirectional; SOT23; Ch: 2
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Max. forward impulse current: 20A
Semiconductor structure: bidirectional
Case: SOT23
Mounting: SMD
Leakage current: 0.5µA
Capacitance: 80pF
Number of channels: 2
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PEC4105CS_R1_00701 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 20A; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Max. forward impulse current: 20A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 0.5µA
Capacitance: 80pF
Number of channels: 1
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PG4007-AU_R2_100A1 PG4007-AU_R2_100A1 PanJit Semiconductor Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; Ir: 50uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Leakage current: 50µA
Application: automotive industry
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PJ30072S6_R1_00301 PanJit Semiconductor PJ30072.pdf Category: Voltage regulators - DC/DC circuits
Description: Converter: DC/DC; Uin: 750mVDC÷5.5VDC; SOT23-6
Input voltage: 750mV DC...5.5V DC
Output current: 0.75A
Case: SOT23-6
Operating temperature: -40...85°C
Type of converter: DC/DC
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PJA138K-AU_R1_000A1 PJA138K-AU_R1_000A1 PanJit Semiconductor PJA138K-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJA3400-AU_R1_000A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; SOT23-6
Mounting: SMD
Case: SOT23-6
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Gate-source voltage: 12V
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
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PJA3400_R1_00001 PJA3400_R1_00001 PanJit Semiconductor PJA3400.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.9A
Pulsed drain current: 19.6A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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PJA3401A_R1_00001 PJA3401A_R1_00001 PanJit Semiconductor PJA3401A.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
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PJA3402_R1_00501 PJA3402_R1_00501 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Mounting: SMD
Pulsed drain current: 17.6A
Power dissipation: 1.25W
Gate charge: 11.3nC
Polarisation: unipolar
Drain current: 4.4A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 92mΩ
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PJA3403_R1_00001 PJA3403_R1_00001 PanJit Semiconductor PJA3403.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.1A; Idm: -12.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.1A
Pulsed drain current: -12.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.165Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
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PJA3404_R1_00501 PJA3404_R1_00501 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 22A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.6A
Pulsed drain current: 22A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 7.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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PJA3407E_R1_00501 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; SOT363
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Drain current: 0.36A
Gate-source voltage: 20V
Drain-source voltage: 50V
Kind of package: reel; tape
Case: SOT363
Kind of channel: enhancement
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PJA3409_R1_00001 PJA3409_R1_00001 PanJit Semiconductor PJA3409.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -11.6A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.9A
Pulsed drain current: -11.6A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 9.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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PJA3413_R1_00001 PJA3413_R1_00001 PanJit Semiconductor PJA3413.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -13.6A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.4A
Pulsed drain current: -13.6A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 146mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
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PJA3416AE_R1_00001 PJA3416AE_R1_00001 PanJit Semiconductor PJA3416AE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; Idm: 32A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Pulsed drain current: 32A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 8.6nC
Kind of package: reel; tape
Kind of channel: enhancement
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PJA3428_R1_00001 PJA3428_R1_00001 PanJit Semiconductor PJA3428.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.3A
Pulsed drain current: 0.6A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.9nC
Kind of package: reel; tape
Kind of channel: enhancement
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348+0.25 EUR
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3000+0.084 EUR
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PJA3433_R1_00001 PJA3433_R1_00001 PanJit Semiconductor PJA3433.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.1A
Pulsed drain current: -4.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.97Ω
Mounting: SMD
Gate charge: 1.6nC
Kind of package: reel; tape
Kind of channel: enhancement
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481+0.18 EUR
650+0.13 EUR
725+0.12 EUR
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PJA3434_R1_00001 PJA3434_R1_00001 PanJit Semiconductor PJA3434.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.75A
Pulsed drain current: 1.5A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3740 Stücke:
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463+0.18 EUR
792+0.11 EUR
1117+0.076 EUR
1205+0.07 EUR
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PJA3435_R1_00001 PJA3435_R1_00001 PanJit Semiconductor PJA3435.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.5A
Pulsed drain current: -1A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhancement
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323+0.26 EUR
500+0.17 EUR
666+0.13 EUR
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PJA3436-AU_R1_000A1 PJA3436-AU_R1_000A1 PanJit Semiconductor PJA3436-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.2A
Pulsed drain current: 4.8A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 0.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 2978 Stücke:
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200+0.43 EUR
336+0.25 EUR
542+0.15 EUR
738+0.12 EUR
1000+0.1 EUR
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PJA3438-AU_R1_000A1 PJA3438-AU_R1_000A1 PanJit Semiconductor PJA3438-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 0.95nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 500 Stücke:
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275+0.31 EUR
439+0.19 EUR
500+0.17 EUR
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PJA3439-AU_R1_000A1 PJA3439-AU_R1_000A1 PanJit Semiconductor PJA3439-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -300mA
Pulsed drain current: -1A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 2990 Stücke:
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167+0.51 EUR
271+0.31 EUR
448+0.19 EUR
622+0.13 EUR
1000+0.12 EUR
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PJA3471_R1_00501 PJA3471_R1_00501 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -900mA; Idm: -3.6A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.9A
Pulsed drain current: -3.6A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 21435 Stücke:
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148+0.58 EUR
260+0.33 EUR
410+0.2 EUR
496+0.17 EUR
569+0.15 EUR
1000+0.14 EUR
3000+0.13 EUR
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PJB100N04S-AU_R2_002A1 PanJit Semiconductor PJB100N04S-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 161A; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 161A
Case: TO263
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJB100N04V-AU_R2_002A1 PanJit Semiconductor PJB100N04V-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 219A; TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 219A
Case: TO263AB
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
 Mindestbestellmenge: 8000 Stücke
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PJB120N03S-AU_R2_002A1 PanJit Semiconductor PJB120N03S-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 76A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 76A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
 Mindestbestellmenge: 8000 Stücke
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PJB140P04E7-AU_R2_002A1 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; DFN3333-8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 22A
Drain-source voltage: 100V
Gate-source voltage: 20V
Application: automotive industry
Kind of package: reel; tape
Case: DFN3333-8
Produkt ist nicht verfügbar
 Mindestbestellmenge: 8000 Stücke
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PJC7400_R1_00001 PJC7400_R1_00001 PanJit Semiconductor PJC7400.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; Idm: 7.6A; 350mW; SOT323
Mounting: SMD
Case: SOT323
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 7.6A
Drain current: 1.9A
Gate charge: 4.8nC
On-state resistance: 0.11Ω
Power dissipation: 0.35W
Gate-source voltage: ±12V
auf Bestellung 5345 Stücke:
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556+0.15 EUR
667+0.13 EUR
705+0.12 EUR
782+0.11 EUR
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PJC7401_R1_00001 PJC7401_R1_00001 PanJit Semiconductor PJC7401.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 350mW; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2075 Stücke:
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139+0.61 EUR
228+0.37 EUR
355+0.24 EUR
417+0.2 EUR
500+0.18 EUR
1000+0.17 EUR
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PJC7404_R1_00001 PJC7404_R1_00001 PanJit Semiconductor PJC7404.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1A
Pulsed drain current: 4A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±8V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.6nC
auf Bestellung 5980 Stücke:
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455+0.19 EUR
481+0.18 EUR
575+0.14 EUR
642+0.13 EUR
1000+0.12 EUR
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PJC7407_R1_00001 PJC7407_R1_00001 PanJit Semiconductor PJC7407.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW
Mounting: SMD
Pulsed drain current: -5.2A
Power dissipation: 0.35W
Gate charge: 5.4nC
Polarisation: unipolar
Drain current: -1.3A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SOT323
On-state resistance: 0.2Ω
auf Bestellung 6765 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.17 EUR
685+0.12 EUR
736+0.12 EUR
782+0.11 EUR
1000+0.1 EUR
Mindestbestellmenge: 500 Stücke
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PJC7409_R1_00001 PanJit Semiconductor PJC7409.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 39A; DFN5060-8
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Gate-source voltage: 20V
Drain current: 39A
Drain-source voltage: 60V
Polarisation: unipolar
Produkt ist nicht verfügbar
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PJC7428_R1_00001 PJC7428_R1_00001 PanJit Semiconductor PJC7428.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 350mW; SOT323
Mounting: SMD
Case: SOT323
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 0.6A
Drain current: 0.3A
Gate charge: 0.9nC
On-state resistance: 4Ω
Power dissipation: 0.35W
Gate-source voltage: ±10V
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.31 EUR
463+0.18 EUR
734+0.12 EUR
872+0.098 EUR
989+0.086 EUR
Mindestbestellmenge: 278 Stücke
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PJC7438-AU_R1_000A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 63.8A; DFN3333-8
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 20V
Drain current: 63.8A
Drain-source voltage: 80V
Application: automotive industry
Produkt ist nicht verfügbar
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PJC7438_R1_00001 PanJit Semiconductor PJC7438.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; DFN3333-8
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 20V
Drain current: 55A
Drain-source voltage: 80V
Produkt ist nicht verfügbar
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PJC7439-AU_R1_000A1 PJC7439-AU_R1_000A1 PanJit Semiconductor PJC7439-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -250mA; Idm: -1A; 350mW
Mounting: SMD
Case: SOT323
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -0.25A
Gate charge: 1.1nC
On-state resistance: 13Ω
Power dissipation: 0.35W
Gate-source voltage: ±20V
Application: automotive industry
auf Bestellung 2875 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.31 EUR
451+0.19 EUR
729+0.12 EUR
1000+0.086 EUR
1147+0.074 EUR
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PJC7472B_R1_00001 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50.1A; DFN3333-8
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 100V
Drain current: 50.1A
Produkt ist nicht verfügbar
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PJD100N06SA-AU_L2_006A1 PanJit Semiconductor PJD100N06SA-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50.4A; DFN3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50.4A
Case: DFN3333-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJD10P10A_L2_00601 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; TO252AA
Case: TO252AA
Mounting: SMD
Polarisation: unipolar
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PJD13N10A_L2_00601 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Drain current: 13A
Kind of channel: enhancement
Drain-source voltage: 100V
Gate-source voltage: 20V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PJD15P06A-AU_L2_000A1 PJD15P06A-AU_L2_000A1 PanJit Semiconductor PJD15P06A-AU Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15A; Idm: -60A; 25W; TO252AA
Case: TO252AA
Kind of package: reel; tape
Pulsed drain current: -60A
Power dissipation: 25W
Gate charge: 17nC
Polarisation: unipolar
Drain current: -15A
Kind of channel: enhancement
Drain-source voltage: -60V
Application: automotive industry
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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PJD15P06A_L2_00601 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; TO252AA
Case: TO252AA
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 15A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Mounting: SMD
Produkt ist nicht verfügbar
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PE4312ES_R1_00701
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 13.2V; 8.3A; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Breakdown voltage: 13.2V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD523
Max. off-state voltage: 12V
Leakage current: 1µA
Number of channels: 1
Capacitance: 90pF
Produkt ist nicht verfügbar
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PE4336ES_R1_00701
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 39.6V; 3.3A; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Breakdown voltage: 39.6V
Max. forward impulse current: 3.3A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD523
Max. off-state voltage: 36V
Leakage current: 1µA
Number of channels: 1
Capacitance: 20pF
Produkt ist nicht verfügbar
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PE4724L1Q-AU_R1_002A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 26.4V; 32A; unidirectional; DFN1610-2; Ch: 1
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.28nF
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 24V
Breakdown voltage: 26.4V
Max. forward impulse current: 32A
Application: automotive industry
Produkt ist nicht verfügbar
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PE4724L1Q_R1_00201
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 26.4V; 32A; unidirectional; DFN1610-2; Ch: 1
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.28nF
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 24V
Breakdown voltage: 26.4V
Max. forward impulse current: 32A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PE4728L1Q-AU_R1_002A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 30V; 27.5A; unidirectional; DFN1610-2; Ch: 1
Type of diode: TVS
Mounting: SMD
Case: DFN1610-2
Semiconductor structure: unidirectional
Breakdown voltage: 30V
Max. forward impulse current: 27.5A
Application: automotive industry
Max. off-state voltage: 28V
Leakage current: 1µA
Capacitance: 0.23nF
Number of channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PE9180C1A-AU_R1_007A1 PE9180C1A-AU.pdf
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 100V; 20A; 0.35kW; bidirectional; SOT23; Ch: 2
Type of diode: TVS
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 80V
Breakdown voltage: 100V
Max. forward impulse current: 20A
Semiconductor structure: bidirectional
Case: SOT23
Mounting: SMD
Leakage current: 30nA
Capacitance: 0.6pF
Number of channels: 2
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PEC11SD03M1Q_R1_00501
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Version: ESD
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.19pF
Produkt ist nicht verfügbar
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PEC1605M1Q-AU_R1_005A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6.8V; 2A; bidirectional; DFN1006-2; Ch: 1
Mounting: SMD
Capacitance: 0.6pF
Application: automotive industry
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Leakage current: 75nA
Case: DFN1006-2
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 6.8V
Max. forward impulse current: 2A
Produkt ist nicht verfügbar
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PEC1605M1Q_R1_00001 PEC1605M1Q.pdf
PEC1605M1Q_R1_00001
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape
Mounting: SMD
Capacitance: 0.6pF
Semiconductor structure: bidirectional
Case: DFN1006-2
Version: ESD
Kind of package: reel; tape
Type of diode: TVS
Leakage current: 75nA
Max. off-state voltage: 5.5V
Breakdown voltage: 6.8...11.2V
Produkt ist nicht verfügbar
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PEC3205C2C_R1_00701
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; bidirectional; SOT323; Ch: 2
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 2
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Semiconductor structure: bidirectional
Case: SOT323
Mounting: SMD
Produkt ist nicht verfügbar
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PEC3205C2E_R1_00701
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; bidirectional; SOT523; Ch: 2
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 2
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Semiconductor structure: bidirectional
Case: SOT523
Mounting: SMD
Produkt ist nicht verfügbar
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PEC3205CS_R1_00701
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 8V; 5A; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 1
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 8V
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Produkt ist nicht verfügbar
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PEC3205ES-AU_R1_007A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; bidirectional; SOD523; Ch: 1
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 1
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Application: automotive industry
Semiconductor structure: bidirectional
Case: SOD523
Mounting: SMD
Produkt ist nicht verfügbar
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PEC3205ES_R1_00701
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; bidirectional; SOD523; Ch: 1
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 1
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Semiconductor structure: bidirectional
Case: SOD523
Mounting: SMD
Produkt ist nicht verfügbar
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PEC3205M1Q_R1_00201 PEC3202M1Q
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 5.5÷8V; bidirectional; DFN1006-2; reel,tape
Kind of package: reel; tape
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Max. off-state voltage: 5V
Breakdown voltage: 5.5...8V
Semiconductor structure: bidirectional
Case: DFN1006-2
Version: ESD
Mounting: SMD
Produkt ist nicht verfügbar
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PEC3205S1Q_R1_00001
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; bidirectional; DFN0603-2; Ch: 1
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 1
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Semiconductor structure: bidirectional
Case: DFN0603-2
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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PEC33712C2A-AU_R1_000A1
PEC33712C2A-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 13.3V; 5A; bidirectional; SOT23; Ch: 2
Semiconductor structure: bidirectional
Application: automotive industry
Case: SOT23
Mounting: SMD
Type of diode: TVS
Leakage current: 1µA
Number of channels: 2
Max. forward impulse current: 5A
Max. off-state voltage: 12V
Breakdown voltage: 13.3V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PEC33712C2A_R1_00001 PEC33712C2A.pdf
PEC33712C2A_R1_00001
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 8A; asymmetric,bidirectional; ESD
Version: ESD
Semiconductor structure: asymmetric; bidirectional
Case: SOT23
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Capacitance: 35pF
Leakage current: 1µA
Number of channels: 2
Max. forward impulse current: 8A
Max. off-state voltage: 7...12V
Breakdown voltage: 7.5...13.3V
Produkt ist nicht verfügbar
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PEC4105C2A_R1_00501
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 20A; bidirectional; SOT23; Ch: 2
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Max. forward impulse current: 20A
Semiconductor structure: bidirectional
Case: SOT23
Mounting: SMD
Leakage current: 0.5µA
Capacitance: 80pF
Number of channels: 2
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PEC4105CS_R1_00701
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 20A; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Max. forward impulse current: 20A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 0.5µA
Capacitance: 80pF
Number of channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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PG4007-AU_R2_100A1
PG4007-AU_R2_100A1
Hersteller: PanJit Semiconductor
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; Ir: 50uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Leakage current: 50µA
Application: automotive industry
Produkt ist nicht verfügbar
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PJ30072S6_R1_00301 PJ30072.pdf
Hersteller: PanJit Semiconductor
Category: Voltage regulators - DC/DC circuits
Description: Converter: DC/DC; Uin: 750mVDC÷5.5VDC; SOT23-6
Input voltage: 750mV DC...5.5V DC
Output current: 0.75A
Case: SOT23-6
Operating temperature: -40...85°C
Type of converter: DC/DC
Produkt ist nicht verfügbar
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PJA138K-AU_R1_000A1 PJA138K-AU.pdf
PJA138K-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 1864 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
313+0.27 EUR
794+0.11 EUR
1119+0.076 EUR
1471+0.058 EUR
1684+0.05 EUR
Mindestbestellmenge: 313 Stücke
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PJA3400-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; SOT23-6
Mounting: SMD
Case: SOT23-6
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Gate-source voltage: 12V
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PJA3400_R1_00001 PJA3400.pdf
PJA3400_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.9A
Pulsed drain current: 19.6A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1170 Stücke:
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186+0.46 EUR
302+0.29 EUR
486+0.18 EUR
667+0.13 EUR
1000+0.11 EUR
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PJA3401A_R1_00001 PJA3401A.pdf
PJA3401A_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1783 Stücke:
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228+0.37 EUR
286+0.3 EUR
511+0.17 EUR
792+0.11 EUR
1000+0.092 EUR
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PJA3402_R1_00501
PJA3402_R1_00501
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Mounting: SMD
Pulsed drain current: 17.6A
Power dissipation: 1.25W
Gate charge: 11.3nC
Polarisation: unipolar
Drain current: 4.4A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 92mΩ
auf Bestellung 9005 Stücke:
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455+0.19 EUR
618+0.14 EUR
826+0.1 EUR
916+0.093 EUR
991+0.086 EUR
1038+0.082 EUR
3000+0.074 EUR
9000+0.073 EUR
Mindestbestellmenge: 455 Stücke
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PJA3403_R1_00001 PJA3403.pdf
PJA3403_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.1A; Idm: -12.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.1A
Pulsed drain current: -12.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.165Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 688 Stücke:
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239+0.36 EUR
350+0.24 EUR
601+0.14 EUR
688+0.12 EUR
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PJA3404_R1_00501
PJA3404_R1_00501
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 22A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.6A
Pulsed drain current: 22A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 7.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2839 Stücke:
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139+0.61 EUR
207+0.42 EUR
459+0.19 EUR
500+0.17 EUR
569+0.15 EUR
1000+0.13 EUR
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PJA3407E_R1_00501
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; SOT363
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Drain current: 0.36A
Gate-source voltage: 20V
Drain-source voltage: 50V
Kind of package: reel; tape
Case: SOT363
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJA3409_R1_00001 PJA3409.pdf
PJA3409_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -11.6A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.9A
Pulsed drain current: -11.6A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 9.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2379 Stücke:
Lieferzeit 14-21 Tag (e)
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186+0.46 EUR
300+0.29 EUR
469+0.18 EUR
619+0.14 EUR
1000+0.12 EUR
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PJA3413_R1_00001 PJA3413.pdf
PJA3413_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -13.6A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.4A
Pulsed drain current: -13.6A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 146mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2353 Stücke:
Lieferzeit 14-21 Tag (e)
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193+0.44 EUR
388+0.21 EUR
587+0.14 EUR
774+0.11 EUR
1000+0.098 EUR
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PJA3416AE_R1_00001 PJA3416AE.pdf
PJA3416AE_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; Idm: 32A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Pulsed drain current: 32A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 8.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 141 Stücke:
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141+0.6 EUR
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PJA3428_R1_00001 PJA3428.pdf
PJA3428_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.3A
Pulsed drain current: 0.6A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 7290 Stücke:
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209+0.4 EUR
348+0.25 EUR
557+0.15 EUR
752+0.11 EUR
1000+0.1 EUR
3000+0.084 EUR
6000+0.076 EUR
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PJA3433_R1_00001 PJA3433.pdf
PJA3433_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.1A
Pulsed drain current: -4.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.97Ω
Mounting: SMD
Gate charge: 1.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1995 Stücke:
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385+0.23 EUR
481+0.18 EUR
650+0.13 EUR
725+0.12 EUR
1000+0.094 EUR
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PJA3434_R1_00001 PJA3434.pdf
PJA3434_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.75A
Pulsed drain current: 1.5A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3740 Stücke:
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295+0.29 EUR
463+0.18 EUR
792+0.11 EUR
1117+0.076 EUR
1205+0.07 EUR
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PJA3435_R1_00001 PJA3435.pdf
PJA3435_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.5A
Pulsed drain current: -1A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 5950 Stücke:
Lieferzeit 14-21 Tag (e)
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193+0.44 EUR
323+0.26 EUR
500+0.17 EUR
666+0.13 EUR
1000+0.11 EUR
3000+0.094 EUR
Mindestbestellmenge: 193 Stücke
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PJA3436-AU_R1_000A1 PJA3436-AU.pdf
PJA3436-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.2A
Pulsed drain current: 4.8A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 0.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 2978 Stücke:
Lieferzeit 14-21 Tag (e)
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200+0.43 EUR
336+0.25 EUR
542+0.15 EUR
738+0.12 EUR
1000+0.1 EUR
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PJA3438-AU_R1_000A1 PJA3438-AU.pdf
PJA3438-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 0.95nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 500 Stücke:
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179+0.48 EUR
275+0.31 EUR
439+0.19 EUR
500+0.17 EUR
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PJA3439-AU_R1_000A1 PJA3439-AU.pdf
PJA3439-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -300mA
Pulsed drain current: -1A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
167+0.51 EUR
271+0.31 EUR
448+0.19 EUR
622+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 167 Stücke
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PJA3471_R1_00501
PJA3471_R1_00501
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -900mA; Idm: -3.6A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.9A
Pulsed drain current: -3.6A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 21435 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
148+0.58 EUR
260+0.33 EUR
410+0.2 EUR
496+0.17 EUR
569+0.15 EUR
1000+0.14 EUR
3000+0.13 EUR
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PJB100N04S-AU_R2_002A1 PJB100N04S-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 161A; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 161A
Case: TO263
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJB100N04V-AU_R2_002A1 PJB100N04V-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 219A; TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 219A
Case: TO263AB
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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PJB120N03S-AU_R2_002A1 PJB120N03S-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 76A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 76A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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PJB140P04E7-AU_R2_002A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; DFN3333-8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 22A
Drain-source voltage: 100V
Gate-source voltage: 20V
Application: automotive industry
Kind of package: reel; tape
Case: DFN3333-8
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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PJC7400_R1_00001 PJC7400.pdf
PJC7400_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; Idm: 7.6A; 350mW; SOT323
Mounting: SMD
Case: SOT323
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 7.6A
Drain current: 1.9A
Gate charge: 4.8nC
On-state resistance: 0.11Ω
Power dissipation: 0.35W
Gate-source voltage: ±12V
auf Bestellung 5345 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
556+0.15 EUR
667+0.13 EUR
705+0.12 EUR
782+0.11 EUR
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PJC7401_R1_00001 PJC7401.pdf
PJC7401_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 350mW; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2075 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
139+0.61 EUR
228+0.37 EUR
355+0.24 EUR
417+0.2 EUR
500+0.18 EUR
1000+0.17 EUR
Mindestbestellmenge: 139 Stücke
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PJC7404_R1_00001 PJC7404.pdf
PJC7404_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1A
Pulsed drain current: 4A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±8V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.6nC
auf Bestellung 5980 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
455+0.19 EUR
481+0.18 EUR
575+0.14 EUR
642+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 455 Stücke
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PJC7407_R1_00001 PJC7407.pdf
PJC7407_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW
Mounting: SMD
Pulsed drain current: -5.2A
Power dissipation: 0.35W
Gate charge: 5.4nC
Polarisation: unipolar
Drain current: -1.3A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SOT323
On-state resistance: 0.2Ω
auf Bestellung 6765 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
500+0.17 EUR
685+0.12 EUR
736+0.12 EUR
782+0.11 EUR
1000+0.1 EUR
Mindestbestellmenge: 500 Stücke
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PJC7409_R1_00001 PJC7409.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 39A; DFN5060-8
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Gate-source voltage: 20V
Drain current: 39A
Drain-source voltage: 60V
Polarisation: unipolar
Produkt ist nicht verfügbar
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PJC7428_R1_00001 PJC7428.pdf
PJC7428_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 350mW; SOT323
Mounting: SMD
Case: SOT323
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 0.6A
Drain current: 0.3A
Gate charge: 0.9nC
On-state resistance: 4Ω
Power dissipation: 0.35W
Gate-source voltage: ±10V
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
278+0.31 EUR
463+0.18 EUR
734+0.12 EUR
872+0.098 EUR
989+0.086 EUR
Mindestbestellmenge: 278 Stücke
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PJC7438-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 63.8A; DFN3333-8
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 20V
Drain current: 63.8A
Drain-source voltage: 80V
Application: automotive industry
Produkt ist nicht verfügbar
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PJC7438_R1_00001 PJC7438.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; DFN3333-8
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 20V
Drain current: 55A
Drain-source voltage: 80V
Produkt ist nicht verfügbar
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PJC7439-AU_R1_000A1 PJC7439-AU.pdf
PJC7439-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -250mA; Idm: -1A; 350mW
Mounting: SMD
Case: SOT323
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -0.25A
Gate charge: 1.1nC
On-state resistance: 13Ω
Power dissipation: 0.35W
Gate-source voltage: ±20V
Application: automotive industry
auf Bestellung 2875 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
278+0.31 EUR
451+0.19 EUR
729+0.12 EUR
1000+0.086 EUR
1147+0.074 EUR
Mindestbestellmenge: 278 Stücke
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PJC7472B_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50.1A; DFN3333-8
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 100V
Drain current: 50.1A
Produkt ist nicht verfügbar
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PJD100N06SA-AU_L2_006A1 PJD100N06SA-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50.4A; DFN3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50.4A
Case: DFN3333-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 30000 Stücke
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PJD10P10A_L2_00601
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; TO252AA
Case: TO252AA
Mounting: SMD
Polarisation: unipolar
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJD13N10A_L2_00601
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Drain current: 13A
Kind of channel: enhancement
Drain-source voltage: 100V
Gate-source voltage: 20V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 9000 Stücke
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PJD15P06A-AU_L2_000A1 PJD15P06A-AU
PJD15P06A-AU_L2_000A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15A; Idm: -60A; 25W; TO252AA
Case: TO252AA
Kind of package: reel; tape
Pulsed drain current: -60A
Power dissipation: 25W
Gate charge: 17nC
Polarisation: unipolar
Drain current: -15A
Kind of channel: enhancement
Drain-source voltage: -60V
Application: automotive industry
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJD15P06A_L2_00601
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; TO252AA
Case: TO252AA
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 15A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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