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3.0SMCJ36CA-AU_R2_000A1 3.0SMCJ36CA-AU_R2_000A1 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 40÷46V; 51.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 51.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Manufacturer series: 3.0SMCJ
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3.0SMCJ36CA_R1_00001 3.0SMCJ36CA_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 40÷46V; 51.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 51.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: 3.0SMCJ
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3.0SMCJ43CA-AU_R1_000A1 PanJit Semiconductor 3.0SMCJ10A-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 47.8÷54.9V; 43.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...54.9V
Max. forward impulse current: 43.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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3.0SMCJ48A_R1_00001 3.0SMCJ48A_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 53.3÷61.3V; 38.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 38.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: 3.0SMCJ
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3.0SMCJ48CA-AU_R1_000A1 3.0SMCJ48CA-AU_R1_000A1 PanJit Semiconductor 3.0SMCJ10A-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 53.3÷61.3V; 38.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 38.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Manufacturer series: 3.0SMCJ
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3.0SMCJ48CA_R1_00001 3.0SMCJ48CA_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 53.3÷61.3V; 38.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 38.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: 3.0SMCJ
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3.0SMCJ5.0A_R2_00001 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 6.4÷7.25V; 326A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 326A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
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3.0SMCJ54A-AU_R1_000A1 PanJit Semiconductor 3.0SMCJ10A-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 60÷69V; 34.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 34.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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3.0SMCJ54CA-AU_R1_000A1 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 60÷69V; 34.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 34.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
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3.0SMCJ54CA_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 60÷69V; 34.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 34.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
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3.0SMCJ58A_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 64.4÷74.1V; 32A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 32A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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3.0SMCJ58CA-AU_R1_000A1 PanJit Semiconductor 3.0SMCJ10A-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 64.4÷74.1V; 32A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 32A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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3.0SMCJ58CA_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 64.4÷74.1V; 32A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 32A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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3.0SMCJ64A_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 71.1÷81.8V; 29.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...81.8V
Max. forward impulse current: 29.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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3.0SMCJ70A-AU_R1_000A1 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 77.8÷89.5V; 26.6A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8...89.5V
Max. forward impulse current: 26.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
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5KMC15AS-AU_R1_000A1 PanJit Semiconductor 5KMC12AS-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 16.7÷18.5V; 205A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 205A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: 5KMC
Application: automotive industry
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5KMC15CAS-AU_R1_000A1 PanJit Semiconductor 5KMC12AS-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 16.7÷18.5V; 205A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 205A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: 5KMC
Application: automotive industry
Produkt ist nicht verfügbar
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5KMC40AS-AU_R1_000A1 PanJit Semiconductor 5KMC12AS-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 44.4÷49.1V; 77.6A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 77.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: 5KMC
Application: automotive industry
Produkt ist nicht verfügbar
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5KMC60AS-AU_R1_000A1 PanJit Semiconductor 5KMC12AS-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 66.7÷73.7V; 51.7A; unidirectional; SMC; reel,tape
Mounting: SMD
Breakdown voltage: 66.7...73.7V
Manufacturer series: 5KMC
Max. forward impulse current: 51.7A
Peak pulse power dissipation: 5kW
Application: automotive industry
Max. off-state voltage: 60V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 5µA
Case: SMC
Type of diode: TVS
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5KP16A_R2_00001 PanJit Semiconductor 5KP_SERIES.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 17.8÷20.5V; 192A; unidirectional; P600; tape; 5KP
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...20.5V
Max. forward impulse current: 192A
Semiconductor structure: unidirectional
Case: P600
Mounting: THT
Leakage current: 6µA
Kind of package: tape
Manufacturer series: 5KP
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5KP20A_R2_00001 PanJit Semiconductor 5KP_SERIES.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 22.2÷25.5V; 154A; unidirectional; P600; tape; 5KP
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 154A
Semiconductor structure: unidirectional
Case: P600
Mounting: THT
Leakage current: 6µA
Kind of package: tape
Manufacturer series: 5KP
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5KP30CA_R2_00001 PanJit Semiconductor 5KP_SERIES.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 33.3÷38.3V; 103A; bidirectional; P600; 5kW; 5KP; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 103A
Semiconductor structure: bidirectional
Case: P600
Mounting: THT
Leakage current: 6µA
Kind of package: tape
Manufacturer series: 5KP
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5KP36A_AY_00001 PanJit Semiconductor Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 40÷46V; 85A; unidirectional; P600; Ammo Pack; 5KP
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 85A
Semiconductor structure: unidirectional
Case: P600
Mounting: THT
Leakage current: 6µA
Kind of package: Ammo Pack
Manufacturer series: 5KP
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5KP36CA_R2_00001 PanJit Semiconductor 5KP_SERIES.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 40÷46V; 85A; bidirectional; P600; 5kW; 5KP; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 85A
Semiconductor structure: bidirectional
Case: P600
Mounting: THT
Leakage current: 6µA
Kind of package: tape
Manufacturer series: 5KP
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5KP48CA_AY_00001 PanJit Semiconductor Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 53.3÷61.3V; 65A; bidirectional; P600; Ammo Pack; 5kW
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 65A
Semiconductor structure: bidirectional
Case: P600
Mounting: THT
Leakage current: 6µA
Kind of package: Ammo Pack
Manufacturer series: 5KP
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5KP48CA_R2_00001 PanJit Semiconductor 5KP_SERIES.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 53.3÷61.3V; 65A; bidirectional; P600; tape; 5kW; 5KP
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 65A
Semiconductor structure: bidirectional
Case: P600
Mounting: THT
Leakage current: 6µA
Kind of package: tape
Manufacturer series: 5KP
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AZ23C16_R1_00501 AZ23C16_R1_00501 PanJit Semiconductor AZ23C2V4_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 16V; SMD; SOT23; double,common anode
Type of diode: Zener
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.3W
Zener voltage: 16V
Tolerance: ±5%
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AZ23C18-AU_R1_000A1 AZ23C18-AU_R1_000A1 PanJit Semiconductor AZ23C2V4-AU_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 18V; SMD; SOT23; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: common anode; double
Application: automotive industry
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AZ23C18_R1_00501 AZ23C18_R1_00501 PanJit Semiconductor AZ23C2V4_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 18V; SMD; SOT23; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: common anode; double
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AZ23C2V4_R1_00501 AZ23C2V4_R1_00501 PanJit Semiconductor AZ23C2V4_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 2.4V; SMD; SOT23; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.4V
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: common anode; double
Tolerance: ±5%
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AZ23C2V7_R1_00501 AZ23C2V7_R1_00501 PanJit Semiconductor AZ23C2V4_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 2.7V; SMD; SOT23; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.7V
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: common anode; double
Tolerance: ±5%
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AZ23C3V3-AU_R1_000A1 AZ23C3V3-AU_R1_000A1 PanJit Semiconductor AZ23C2V4-AU_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 3.3V; SMD; SOT23; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: common anode; double
Application: automotive industry
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AZ23C3V3_R1_00501 AZ23C3V3_R1_00501 PanJit Semiconductor AZ23C2V4_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 3.3V; SMD; SOT23; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: common anode; double
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AZ23C3V6_R1_00501 AZ23C3V6_R1_00501 PanJit Semiconductor AZ23C2V4_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 3.6V; SMD; SOT23; double,common anode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: common anode; double
Kind of package: reel; tape
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AZ23C4V7-AU_R1_000A1 AZ23C4V7-AU_R1_000A1 PanJit Semiconductor AZ23C2V4-AU_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 4.7V; SMD; SOT23; double,common anode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: common anode; double
Kind of package: reel; tape
Application: automotive industry
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AZ23C5V1-AU_R1_000A1 AZ23C5V1-AU_R1_000A1 PanJit Semiconductor AZ23C2V4-AU_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 5.1V; SMD; SOT23; double,common anode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: common anode; double
Kind of package: reel; tape
Application: automotive industry
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AZ23C5V1_R1_00501 AZ23C5V1_R1_00501 PanJit Semiconductor AZ23C2V4_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 5.1V; SMD; SOT23; double,common anode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: common anode; double
Kind of package: reel; tape
Produkt ist nicht verfügbar
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AZ23C5V6-AU_R1_000A1 AZ23C5V6-AU_R1_000A1 PanJit Semiconductor AZ23C2V4-AU_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 5.6V; SMD; SOT23; double,common anode
Type of diode: Zener
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Tolerance: ±5%
Kind of package: reel; tape
Power dissipation: 0.3W
Application: automotive industry
Zener voltage: 5.6V
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AZ23C5V6_R1_00001 AZ23C5V6_R1_00001 PanJit Semiconductor AZ23C2V4_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 5.6V; SMD; SOT23; double,common anode
Type of diode: Zener
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Tolerance: ±5%
Kind of package: reel; tape
Power dissipation: 0.3W
Zener voltage: 5.6V
Produkt ist nicht verfügbar
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AZ23C6V2_R1_00501 AZ23C6V2_R1_00501 PanJit Semiconductor AZ23C2V4_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 6.2V; SMD; SOT23; double,common anode
Type of diode: Zener
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.3W
Zener voltage: 6.2V
Tolerance: ±5%
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AZ23C6V8_R1_00501 AZ23C6V8_R1_00501 PanJit Semiconductor AZ23C2V4_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 6.8V; SMD; SOT23; double,common anode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: common anode; double
Kind of package: reel; tape
Produkt ist nicht verfügbar
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B104S_R2_00001 PanJit Semiconductor Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; 30A; MDI; THT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 30A
Case: MDI
Electrical mounting: THT
Max. forward voltage: 1.1V
Produkt ist nicht verfügbar
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B106S_R2_00001 PanJit Semiconductor B1005S_SERIES.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; 30A; MDI; THT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 30A
Case: MDI
Electrical mounting: THT
Max. forward voltage: 1.1V
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B108S_R2_00001 PanJit Semiconductor B1005S_SERIES.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; 30A; MDI; THT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 30A
Case: MDI
Electrical mounting: THT
Max. forward voltage: 1.1V
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B10S_R2_00001 B10S_R2_00001 PanJit Semiconductor B1S_SERIES.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 0.8A; Ifsm: 35A; MDI
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.8A
Case: MDI
Electrical mounting: SMT
Max. forward voltage: 1V
Kind of package: reel; tape
Max. forward impulse current: 35A
Features of semiconductor devices: glass passivated
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376+0.23 EUR
477+0.18 EUR
527+0.17 EUR
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B4S_R2_00001 B4S_R2_00001 PanJit Semiconductor B1S_SERIES.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 0.8A; Ifsm: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 0.8A
Case: MDI
Electrical mounting: SMT
Max. forward voltage: 1V
Kind of package: reel; tape
Max. forward impulse current: 35A
Features of semiconductor devices: glass passivated
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500+0.17 EUR
550+0.15 EUR
610+0.14 EUR
650+0.13 EUR
1000+0.12 EUR
3000+0.11 EUR
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B6S_R2_00001 B6S_R2_00001 PanJit Semiconductor B1S_SERIES.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 0.8A; Ifsm: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 0.8A
Case: MDI
Electrical mounting: SMT
Max. forward voltage: 1V
Kind of package: reel; tape
Max. forward impulse current: 35A
Features of semiconductor devices: glass passivated
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228+0.37 EUR
391+0.21 EUR
556+0.15 EUR
725+0.12 EUR
1000+0.12 EUR
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B8S_R2_00001 B8S_R2_00001 PanJit Semiconductor B1S_SERIES.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 0.8A; Ifsm: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 0.8A
Case: MDI
Electrical mounting: SMT
Max. forward voltage: 1V
Kind of package: reel; tape
Max. forward impulse current: 35A
Features of semiconductor devices: glass passivated
auf Bestellung 2697 Stücke:
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143+0.6 EUR
250+0.35 EUR
424+0.2 EUR
603+0.14 EUR
1000+0.12 EUR
Mindestbestellmenge: 143 Stücke
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BAS16TS-AU_R1_000A1 BAS16TS-AU_R1_000A1 PanJit Semiconductor Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.125A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Case: SOD523
Max. forward voltage: 0.855V
Max. forward impulse current: 4A
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: fast switching
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1250+0.068 EUR
1786+0.048 EUR
2184+0.039 EUR
2464+0.035 EUR
2794+0.031 EUR
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BAS16TS_R1_00001 BAS16TS_R1_00001 PanJit Semiconductor BAS16TS.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.125A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Case: SOD523
Max. forward voltage: 0.855V
Max. forward impulse current: 4A
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: fast switching
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BAS16TW_R1_00001 BAS16TW_R1_00001 PanJit Semiconductor Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 2.5µA
Kind of package: reel; tape
Features of semiconductor devices: fast switching
auf Bestellung 2784 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.17 EUR
589+0.14 EUR
710+0.12 EUR
887+0.096 EUR
993+0.086 EUR
1183+0.071 EUR
Mindestbestellmenge: 500 Stücke
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BAS21_R1_00001 BAS21_R1_00001 PanJit Semiconductor Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1V; Ifsm: 2.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 2.5A
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: fast switching
auf Bestellung 2825 Stücke:
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715+0.12 EUR
1220+0.07 EUR
1651+0.051 EUR
2184+0.039 EUR
2539+0.033 EUR
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BAS316_R1_00001 BAS316_R1_00001 PanJit Semiconductor BAS316.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 0.5µA
Kind of package: reel; tape
Max. load current: 0.5A
Produkt ist nicht verfügbar
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BAS40SDW-AU_R1_000A1 BAS40SDW-AU_R1_000A1 PanJit Semiconductor BAS40TW-AU_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series x2
Max. forward voltage: 1V
Leakage current: 22µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 2965 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.24 EUR
506+0.17 EUR
642+0.13 EUR
946+0.09 EUR
1211+0.07 EUR
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BAS40SDW_R1_00001 BAS40SDW_R1_00001 PanJit Semiconductor BAS40TW_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series x2
Max. forward voltage: 1V
Leakage current: 1µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
auf Bestellung 11990 Stücke:
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625+0.13 EUR
910+0.094 EUR
1155+0.074 EUR
1320+0.064 EUR
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BAS40S_R1_00001 BAS40S_R1_00001 PanJit Semiconductor BAS40_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 1V
Leakage current: 1µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
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556+0.15 EUR
820+0.1 EUR
1337+0.063 EUR
1894+0.045 EUR
2203+0.038 EUR
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BAS70S-AU_R1_000A1 BAS70S-AU_R1_000A1 PanJit Semiconductor BAS70-AU_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 0.9V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Application: automotive industry
Leakage current: 45µA
auf Bestellung 26995 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.13 EUR
962+0.088 EUR
1471+0.058 EUR
1977+0.043 EUR
2165+0.039 EUR
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BAS70TW_R1_00001 BAS70TW_R1_00001 PanJit Semiconductor BAS70TW_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 70V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: triple independent
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Reverse recovery time: 5ns
Power dissipation: 0.225W
Leakage current: 0.1µA
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BAS70WS_R1_00001 BAS70WS_R1_00001 PanJit Semiconductor BAS70WS.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
Leakage current: 10µA
auf Bestellung 1478 Stücke:
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500+0.17 EUR
910+0.094 EUR
1478+0.058 EUR
Mindestbestellmenge: 500 Stücke
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BAT42W_R1_00001 BAT42W_R1_00001 PanJit Semiconductor BAT42W_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 0.5µA
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127+0.67 EUR
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3.0SMCJ36CA-AU_R2_000A1
3.0SMCJ36CA-AU_R2_000A1
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 40÷46V; 51.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 51.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Manufacturer series: 3.0SMCJ
Produkt ist nicht verfügbar
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3.0SMCJ36CA_R1_00001 3.0SMCJ_SERIES.pdf
3.0SMCJ36CA_R1_00001
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 40÷46V; 51.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 51.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: 3.0SMCJ
Produkt ist nicht verfügbar
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3.0SMCJ43CA-AU_R1_000A1 3.0SMCJ10A-AU_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 47.8÷54.9V; 43.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...54.9V
Max. forward impulse current: 43.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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3.0SMCJ48A_R1_00001 3.0SMCJ_SERIES.pdf
3.0SMCJ48A_R1_00001
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 53.3÷61.3V; 38.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 38.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: 3.0SMCJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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3.0SMCJ48CA-AU_R1_000A1 3.0SMCJ10A-AU_SERIES.pdf
3.0SMCJ48CA-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 53.3÷61.3V; 38.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 38.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Manufacturer series: 3.0SMCJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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3.0SMCJ48CA_R1_00001 3.0SMCJ_SERIES.pdf
3.0SMCJ48CA_R1_00001
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 53.3÷61.3V; 38.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 38.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: 3.0SMCJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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3.0SMCJ5.0A_R2_00001
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 6.4÷7.25V; 326A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 326A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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3.0SMCJ54A-AU_R1_000A1 3.0SMCJ10A-AU_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 60÷69V; 34.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 34.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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3.0SMCJ54CA-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 60÷69V; 34.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 34.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
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3.0SMCJ54CA_R1_00001 3.0SMCJ_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 60÷69V; 34.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 34.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
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3.0SMCJ58A_R1_00001 3.0SMCJ_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 64.4÷74.1V; 32A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 32A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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3.0SMCJ58CA-AU_R1_000A1 3.0SMCJ10A-AU_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 64.4÷74.1V; 32A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 32A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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3.0SMCJ58CA_R1_00001 3.0SMCJ_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 64.4÷74.1V; 32A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 32A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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3.0SMCJ64A_R1_00001 3.0SMCJ_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 71.1÷81.8V; 29.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...81.8V
Max. forward impulse current: 29.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
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3.0SMCJ70A-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 77.8÷89.5V; 26.6A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8...89.5V
Max. forward impulse current: 26.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
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5KMC15AS-AU_R1_000A1 5KMC12AS-AU_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 16.7÷18.5V; 205A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 205A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: 5KMC
Application: automotive industry
Produkt ist nicht verfügbar
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5KMC15CAS-AU_R1_000A1 5KMC12AS-AU_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 16.7÷18.5V; 205A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 205A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: 5KMC
Application: automotive industry
Produkt ist nicht verfügbar
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5KMC40AS-AU_R1_000A1 5KMC12AS-AU_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 44.4÷49.1V; 77.6A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 77.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: 5KMC
Application: automotive industry
Produkt ist nicht verfügbar
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5KMC60AS-AU_R1_000A1 5KMC12AS-AU_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 66.7÷73.7V; 51.7A; unidirectional; SMC; reel,tape
Mounting: SMD
Breakdown voltage: 66.7...73.7V
Manufacturer series: 5KMC
Max. forward impulse current: 51.7A
Peak pulse power dissipation: 5kW
Application: automotive industry
Max. off-state voltage: 60V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 5µA
Case: SMC
Type of diode: TVS
Produkt ist nicht verfügbar
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5KP16A_R2_00001 5KP_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 17.8÷20.5V; 192A; unidirectional; P600; tape; 5KP
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...20.5V
Max. forward impulse current: 192A
Semiconductor structure: unidirectional
Case: P600
Mounting: THT
Leakage current: 6µA
Kind of package: tape
Manufacturer series: 5KP
Produkt ist nicht verfügbar
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5KP20A_R2_00001 5KP_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 22.2÷25.5V; 154A; unidirectional; P600; tape; 5KP
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 154A
Semiconductor structure: unidirectional
Case: P600
Mounting: THT
Leakage current: 6µA
Kind of package: tape
Manufacturer series: 5KP
Produkt ist nicht verfügbar
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5KP30CA_R2_00001 5KP_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 33.3÷38.3V; 103A; bidirectional; P600; 5kW; 5KP; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 103A
Semiconductor structure: bidirectional
Case: P600
Mounting: THT
Leakage current: 6µA
Kind of package: tape
Manufacturer series: 5KP
Produkt ist nicht verfügbar
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5KP36A_AY_00001
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 40÷46V; 85A; unidirectional; P600; Ammo Pack; 5KP
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 85A
Semiconductor structure: unidirectional
Case: P600
Mounting: THT
Leakage current: 6µA
Kind of package: Ammo Pack
Manufacturer series: 5KP
Produkt ist nicht verfügbar
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5KP36CA_R2_00001 5KP_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 40÷46V; 85A; bidirectional; P600; 5kW; 5KP; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 85A
Semiconductor structure: bidirectional
Case: P600
Mounting: THT
Leakage current: 6µA
Kind of package: tape
Manufacturer series: 5KP
Produkt ist nicht verfügbar
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5KP48CA_AY_00001
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 53.3÷61.3V; 65A; bidirectional; P600; Ammo Pack; 5kW
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 65A
Semiconductor structure: bidirectional
Case: P600
Mounting: THT
Leakage current: 6µA
Kind of package: Ammo Pack
Manufacturer series: 5KP
Produkt ist nicht verfügbar
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5KP48CA_R2_00001 5KP_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 53.3÷61.3V; 65A; bidirectional; P600; tape; 5kW; 5KP
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 65A
Semiconductor structure: bidirectional
Case: P600
Mounting: THT
Leakage current: 6µA
Kind of package: tape
Manufacturer series: 5KP
Produkt ist nicht verfügbar
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AZ23C16_R1_00501 AZ23C2V4_SERIES.pdf
AZ23C16_R1_00501
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 16V; SMD; SOT23; double,common anode
Type of diode: Zener
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.3W
Zener voltage: 16V
Tolerance: ±5%
Produkt ist nicht verfügbar
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AZ23C18-AU_R1_000A1 AZ23C2V4-AU_SER.pdf
AZ23C18-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 18V; SMD; SOT23; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: common anode; double
Application: automotive industry
Produkt ist nicht verfügbar
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AZ23C18_R1_00501 AZ23C2V4_SERIES.pdf
AZ23C18_R1_00501
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 18V; SMD; SOT23; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: common anode; double
Produkt ist nicht verfügbar
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AZ23C2V4_R1_00501 AZ23C2V4_SERIES.pdf
AZ23C2V4_R1_00501
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 2.4V; SMD; SOT23; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.4V
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: common anode; double
Tolerance: ±5%
Produkt ist nicht verfügbar
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AZ23C2V7_R1_00501 AZ23C2V4_SERIES.pdf
AZ23C2V7_R1_00501
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 2.7V; SMD; SOT23; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.7V
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: common anode; double
Tolerance: ±5%
Produkt ist nicht verfügbar
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AZ23C3V3-AU_R1_000A1 AZ23C2V4-AU_SER.pdf
AZ23C3V3-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 3.3V; SMD; SOT23; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: common anode; double
Application: automotive industry
Produkt ist nicht verfügbar
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AZ23C3V3_R1_00501 AZ23C2V4_SERIES.pdf
AZ23C3V3_R1_00501
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 3.3V; SMD; SOT23; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: common anode; double
Produkt ist nicht verfügbar
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AZ23C3V6_R1_00501 AZ23C2V4_SERIES.pdf
AZ23C3V6_R1_00501
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 3.6V; SMD; SOT23; double,common anode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: common anode; double
Kind of package: reel; tape
Produkt ist nicht verfügbar
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AZ23C4V7-AU_R1_000A1 AZ23C2V4-AU_SER.pdf
AZ23C4V7-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 4.7V; SMD; SOT23; double,common anode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: common anode; double
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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AZ23C5V1-AU_R1_000A1 AZ23C2V4-AU_SER.pdf
AZ23C5V1-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 5.1V; SMD; SOT23; double,common anode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: common anode; double
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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AZ23C5V1_R1_00501 AZ23C2V4_SERIES.pdf
AZ23C5V1_R1_00501
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 5.1V; SMD; SOT23; double,common anode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: common anode; double
Kind of package: reel; tape
Produkt ist nicht verfügbar
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AZ23C5V6-AU_R1_000A1 AZ23C2V4-AU_SER.pdf
AZ23C5V6-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 5.6V; SMD; SOT23; double,common anode
Type of diode: Zener
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Tolerance: ±5%
Kind of package: reel; tape
Power dissipation: 0.3W
Application: automotive industry
Zener voltage: 5.6V
Produkt ist nicht verfügbar
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AZ23C5V6_R1_00001 AZ23C2V4_SERIES.pdf
AZ23C5V6_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 5.6V; SMD; SOT23; double,common anode
Type of diode: Zener
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Tolerance: ±5%
Kind of package: reel; tape
Power dissipation: 0.3W
Zener voltage: 5.6V
Produkt ist nicht verfügbar
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AZ23C6V2_R1_00501 AZ23C2V4_SERIES.pdf
AZ23C6V2_R1_00501
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 6.2V; SMD; SOT23; double,common anode
Type of diode: Zener
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.3W
Zener voltage: 6.2V
Tolerance: ±5%
Produkt ist nicht verfügbar
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AZ23C6V8_R1_00501 AZ23C2V4_SERIES.pdf
AZ23C6V8_R1_00501
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 6.8V; SMD; SOT23; double,common anode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: common anode; double
Kind of package: reel; tape
Produkt ist nicht verfügbar
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B104S_R2_00001
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; 30A; MDI; THT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 30A
Case: MDI
Electrical mounting: THT
Max. forward voltage: 1.1V
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B106S_R2_00001 B1005S_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; 30A; MDI; THT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 30A
Case: MDI
Electrical mounting: THT
Max. forward voltage: 1.1V
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B108S_R2_00001 B1005S_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; 30A; MDI; THT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 30A
Case: MDI
Electrical mounting: THT
Max. forward voltage: 1.1V
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B10S_R2_00001 B1S_SERIES.pdf
B10S_R2_00001
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 0.8A; Ifsm: 35A; MDI
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.8A
Case: MDI
Electrical mounting: SMT
Max. forward voltage: 1V
Kind of package: reel; tape
Max. forward impulse current: 35A
Features of semiconductor devices: glass passivated
auf Bestellung 2540 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
250+0.35 EUR
376+0.23 EUR
477+0.18 EUR
527+0.17 EUR
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B4S_R2_00001 B1S_SERIES.pdf
B4S_R2_00001
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 0.8A; Ifsm: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 0.8A
Case: MDI
Electrical mounting: SMT
Max. forward voltage: 1V
Kind of package: reel; tape
Max. forward impulse current: 35A
Features of semiconductor devices: glass passivated
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500+0.17 EUR
550+0.15 EUR
610+0.14 EUR
650+0.13 EUR
1000+0.12 EUR
3000+0.11 EUR
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B6S_R2_00001 B1S_SERIES.pdf
B6S_R2_00001
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 0.8A; Ifsm: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 0.8A
Case: MDI
Electrical mounting: SMT
Max. forward voltage: 1V
Kind of package: reel; tape
Max. forward impulse current: 35A
Features of semiconductor devices: glass passivated
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228+0.37 EUR
391+0.21 EUR
556+0.15 EUR
725+0.12 EUR
1000+0.12 EUR
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B8S_R2_00001 B1S_SERIES.pdf
B8S_R2_00001
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 0.8A; Ifsm: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 0.8A
Case: MDI
Electrical mounting: SMT
Max. forward voltage: 1V
Kind of package: reel; tape
Max. forward impulse current: 35A
Features of semiconductor devices: glass passivated
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143+0.6 EUR
250+0.35 EUR
424+0.2 EUR
603+0.14 EUR
1000+0.12 EUR
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BAS16TS-AU_R1_000A1
BAS16TS-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.125A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Case: SOD523
Max. forward voltage: 0.855V
Max. forward impulse current: 4A
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: fast switching
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1250+0.068 EUR
1786+0.048 EUR
2184+0.039 EUR
2464+0.035 EUR
2794+0.031 EUR
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BAS16TS_R1_00001 BAS16TS.pdf
BAS16TS_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.125A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Case: SOD523
Max. forward voltage: 0.855V
Max. forward impulse current: 4A
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: fast switching
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BAS16TW_R1_00001
BAS16TW_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 2.5µA
Kind of package: reel; tape
Features of semiconductor devices: fast switching
auf Bestellung 2784 Stücke:
Lieferzeit 14-21 Tag (e)
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500+0.17 EUR
589+0.14 EUR
710+0.12 EUR
887+0.096 EUR
993+0.086 EUR
1183+0.071 EUR
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BAS21_R1_00001
BAS21_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1V; Ifsm: 2.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 2.5A
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: fast switching
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715+0.12 EUR
1220+0.07 EUR
1651+0.051 EUR
2184+0.039 EUR
2539+0.033 EUR
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BAS316_R1_00001 BAS316.pdf
BAS316_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 0.5µA
Kind of package: reel; tape
Max. load current: 0.5A
Produkt ist nicht verfügbar
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BAS40SDW-AU_R1_000A1 BAS40TW-AU_SERIES.pdf
BAS40SDW-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series x2
Max. forward voltage: 1V
Leakage current: 22µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 2965 Stücke:
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358+0.24 EUR
506+0.17 EUR
642+0.13 EUR
946+0.09 EUR
1211+0.07 EUR
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BAS40SDW_R1_00001 BAS40TW_SERIES.pdf
BAS40SDW_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series x2
Max. forward voltage: 1V
Leakage current: 1µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
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625+0.13 EUR
910+0.094 EUR
1155+0.074 EUR
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BAS40S_R1_00001 BAS40_SERIES.pdf
BAS40S_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 1V
Leakage current: 1µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
auf Bestellung 2497 Stücke:
Lieferzeit 14-21 Tag (e)
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556+0.15 EUR
820+0.1 EUR
1337+0.063 EUR
1894+0.045 EUR
2203+0.038 EUR
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BAS70S-AU_R1_000A1 BAS70-AU_SERIES.pdf
BAS70S-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 0.9V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Application: automotive industry
Leakage current: 45µA
auf Bestellung 26995 Stücke:
Lieferzeit 14-21 Tag (e)
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625+0.13 EUR
962+0.088 EUR
1471+0.058 EUR
1977+0.043 EUR
2165+0.039 EUR
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BAS70TW_R1_00001 BAS70TW_SERIES.pdf
BAS70TW_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 70V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: triple independent
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Reverse recovery time: 5ns
Power dissipation: 0.225W
Leakage current: 0.1µA
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BAS70WS_R1_00001 BAS70WS.pdf
BAS70WS_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
Leakage current: 10µA
auf Bestellung 1478 Stücke:
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500+0.17 EUR
910+0.094 EUR
1478+0.058 EUR
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BAT42W_R1_00001 BAT42W_SERIES.pdf
BAT42W_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 0.5µA
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127+0.67 EUR
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