| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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RS1006FL_R1_00001 | PanJit |
 Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1A; 500ns; SOD123F; Ufmax: 1.3V Max. forward impulse current: 30A Max. forward voltage: 1.3V Features of semiconductor devices: fast switching; glass passivated Max. off-state voltage: 0.6kV Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 50µA Case: SOD123F Type of diode: rectifying Reverse recovery time: 0.5µs Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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P6SMBJ48CA-AU_R1_000A1 | PanJit |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 48V Breakdown voltage: 53.3...58.9V Max. forward impulse current: 7.7A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P6SMBJ Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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P6SMBJ48CA_R1_00001 | PanJit |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 48V Breakdown voltage: 53.3...58.9V Max. forward impulse current: 7.7A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P6SMBJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| PJB180N04S7-AU_R2_002A1 | PanJit |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 131A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 131A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of channel: enhancement Application: automotive industry Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| PJB180N04V7-AU_R2_002A1 | PanJit |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 126A; DFN5060X-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 126A Case: DFN5060X-8 Gate-source voltage: 20V Mounting: SMD Kind of channel: enhancement Application: automotive industry Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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BC846BS-AU_R1_000A1 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 65V; 0.1A; 0.225W; SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.225W Case: SOT363 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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P4SMAJ120A_R1_00001 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 133÷147V; 2A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 120V Breakdown voltage: 133...147V Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P4SMAJ Max. forward impulse current: 2A Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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P4SMA39A-AU_R1_000A1 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 37.1÷41V; 7.8A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 33.3V Breakdown voltage: 37.1...41V Max. forward impulse current: 7.8A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P4SMA Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| RPMS410_R2_00601 | PanJit |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 120A; M4 Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 4A Max. forward impulse current: 120A Case: M4 Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1.3V Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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PJSD36TS_R1_00001 | PanJit |
Category: Protection diodes - arrays Description: Diode: TVS; 40V; 1A; 0.12kW; unidirectional; SOD523; Ch: 1 Max. off-state voltage: 36V Max. forward impulse current: 1A Semiconductor structure: unidirectional Leakage current: 5µA Case: SOD523 Capacitance: 20pF Type of diode: TVS Number of channels: 1 Mounting: SMD Breakdown voltage: 40V Peak pulse power dissipation: 0.12kW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PJSD36W-AU_R1_000A1 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; ESD; 350W; 39.9÷45V; 1A; unidirectional; SOD323; 30pF Max. off-state voltage: 36V Max. forward impulse current: 1A Version: ESD Kind of package: reel; tape Semiconductor structure: unidirectional Leakage current: 1µA Case: SOD323 Capacitance: 30pF Type of diode: TVS Mounting: SMD Breakdown voltage: 39.9...45V Peak pulse power dissipation: 0.35kW Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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PJSD36W_R1_00001 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; ESD; 350W; 39.9÷45V; 1A; unidirectional; SOD323; 30pF Max. off-state voltage: 36V Max. forward impulse current: 1A Version: ESD Kind of package: reel; tape Semiconductor structure: unidirectional Leakage current: 1µA Case: SOD323 Capacitance: 30pF Type of diode: TVS Mounting: SMD Breakdown voltage: 39.9...45V Peak pulse power dissipation: 0.35kW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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P6SMBJ54A_R1_00001 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 60÷66.3V; 6.9A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 54V Breakdown voltage: 60...66.3V Max. forward impulse current: 6.9A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P6SMBJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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P6SMBJ54A-AU_R1_000A1 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 60÷66.3V; 6.9A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 54V Breakdown voltage: 60...66.3V Max. forward impulse current: 6.9A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P6SMBJ Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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P6SMBJ8.5CA_R1_00001 | PanJit |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 9.44÷10.4V; 41.7A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 8.5V Breakdown voltage: 9.44...10.4V Max. forward impulse current: 41.7A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 20µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P6SMBJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BC857B-AU_R1_000A1 | PanJit |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.1A; SOT23; automotive industry Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Case: SOT23 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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ER2D_R1_00001 | PanJit |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 0.95V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: SMB Max. forward voltage: 0.95V Max. forward impulse current: 50A Leakage current: 0.15mA Kind of package: reel; tape |
auf Bestellung 768 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| RS1006FL_R1_00001 |
|
Hersteller: PanJit
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 500ns; SOD123F; Ufmax: 1.3V
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Features of semiconductor devices: fast switching; glass passivated
Max. off-state voltage: 0.6kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 50µA
Case: SOD123F
Type of diode: rectifying
Reverse recovery time: 0.5µs
Mounting: SMD
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 500ns; SOD123F; Ufmax: 1.3V
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Features of semiconductor devices: fast switching; glass passivated
Max. off-state voltage: 0.6kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 50µA
Case: SOD123F
Type of diode: rectifying
Reverse recovery time: 0.5µs
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ48CA-AU_R1_000A1 |
|
Hersteller: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 7.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 7.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ48CA_R1_00001 |
|
Hersteller: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 7.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 7.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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Stück im Wert von UAH
| PJB180N04S7-AU_R2_002A1 |
|
Hersteller: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 131A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 131A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 131A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 131A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PJB180N04V7-AU_R2_002A1 |
|
Hersteller: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 126A; DFN5060X-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 126A
Case: DFN5060X-8
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 126A; DFN5060X-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 126A
Case: DFN5060X-8
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BC846BS-AU_R1_000A1 |
|
Hersteller: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 65V; 0.1A; 0.225W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 65V; 0.1A; 0.225W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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| P4SMAJ120A_R1_00001 |
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 133÷147V; 2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Max. forward impulse current: 2A
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 133÷147V; 2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Max. forward impulse current: 2A
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P4SMA39A-AU_R1_000A1 |
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 37.1÷41V; 7.8A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1...41V
Max. forward impulse current: 7.8A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMA
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 37.1÷41V; 7.8A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1...41V
Max. forward impulse current: 7.8A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMA
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
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| RPMS410_R2_00601 |
|
Hersteller: PanJit
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 120A; M4
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 120A
Case: M4
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.3V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 120A; M4
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 120A
Case: M4
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.3V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
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| PJSD36TS_R1_00001 |
|
Hersteller: PanJit
Category: Protection diodes - arrays
Description: Diode: TVS; 40V; 1A; 0.12kW; unidirectional; SOD523; Ch: 1
Max. off-state voltage: 36V
Max. forward impulse current: 1A
Semiconductor structure: unidirectional
Leakage current: 5µA
Case: SOD523
Capacitance: 20pF
Type of diode: TVS
Number of channels: 1
Mounting: SMD
Breakdown voltage: 40V
Peak pulse power dissipation: 0.12kW
Category: Protection diodes - arrays
Description: Diode: TVS; 40V; 1A; 0.12kW; unidirectional; SOD523; Ch: 1
Max. off-state voltage: 36V
Max. forward impulse current: 1A
Semiconductor structure: unidirectional
Leakage current: 5µA
Case: SOD523
Capacitance: 20pF
Type of diode: TVS
Number of channels: 1
Mounting: SMD
Breakdown voltage: 40V
Peak pulse power dissipation: 0.12kW
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PJSD36W-AU_R1_000A1 |
|
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 350W; 39.9÷45V; 1A; unidirectional; SOD323; 30pF
Max. off-state voltage: 36V
Max. forward impulse current: 1A
Version: ESD
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: SOD323
Capacitance: 30pF
Type of diode: TVS
Mounting: SMD
Breakdown voltage: 39.9...45V
Peak pulse power dissipation: 0.35kW
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 350W; 39.9÷45V; 1A; unidirectional; SOD323; 30pF
Max. off-state voltage: 36V
Max. forward impulse current: 1A
Version: ESD
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: SOD323
Capacitance: 30pF
Type of diode: TVS
Mounting: SMD
Breakdown voltage: 39.9...45V
Peak pulse power dissipation: 0.35kW
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJSD36W_R1_00001 |
|
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 350W; 39.9÷45V; 1A; unidirectional; SOD323; 30pF
Max. off-state voltage: 36V
Max. forward impulse current: 1A
Version: ESD
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: SOD323
Capacitance: 30pF
Type of diode: TVS
Mounting: SMD
Breakdown voltage: 39.9...45V
Peak pulse power dissipation: 0.35kW
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 350W; 39.9÷45V; 1A; unidirectional; SOD323; 30pF
Max. off-state voltage: 36V
Max. forward impulse current: 1A
Version: ESD
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: SOD323
Capacitance: 30pF
Type of diode: TVS
Mounting: SMD
Breakdown voltage: 39.9...45V
Peak pulse power dissipation: 0.35kW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ54A_R1_00001 |
|
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 60÷66.3V; 6.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 60÷66.3V; 6.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ54A-AU_R1_000A1 |
|
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 60÷66.3V; 6.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 60÷66.3V; 6.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ8.5CA_R1_00001 |
|
Hersteller: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 9.44÷10.4V; 41.7A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.5V
Breakdown voltage: 9.44...10.4V
Max. forward impulse current: 41.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 20µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 9.44÷10.4V; 41.7A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.5V
Breakdown voltage: 9.44...10.4V
Max. forward impulse current: 41.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 20µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BC857B-AU_R1_000A1 |
|
Hersteller: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; SOT23; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; SOT23; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ER2D_R1_00001 |
|
Hersteller: PanJit
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 0.95V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMB
Max. forward voltage: 0.95V
Max. forward impulse current: 50A
Leakage current: 0.15mA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 0.95V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMB
Max. forward voltage: 0.95V
Max. forward impulse current: 50A
Leakage current: 0.15mA
Kind of package: reel; tape
auf Bestellung 768 Stücke:
Lieferzeit 14-21 Tag (e)