| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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P4KE16A_R2_00001 | PanJit |
 Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 0.4kW; 15.2÷16.8V; 19A; unidirectional; DO41; P4KE Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 13.6V Breakdown voltage: 15.2...16.8V Max. forward impulse current: 19A Semiconductor structure: unidirectional Case: DO41 Mounting: THT Leakage current: 1µA Manufacturer series: P4KE |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| PMSM608_R2_00301 | PanJit |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 150A; M6 Type of bridge rectifier: single-phase Max. forward impulse current: 150A Max. forward voltage: 1V Max. off-state voltage: 0.8kV Electrical mounting: SMT Load current: 6A Case: M6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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BC847BPNTB6_S1_00701 | PanJit |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; 45V; 0.1A; 0.2W; SOT563 Type of transistor: NPN / PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SOT563 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |
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BC847BPN-AU_R1_000A1 | PanJit |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; 45V; 0.1A; 0.2W; SOT363 Type of transistor: NPN / PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SOT363 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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BC847BPNTB6_R1_00701 | PanJit |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SOT563 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BC847BPNTB6_R2_00701 | PanJit |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SOT563 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |
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| PSMQE070N08LS2_R2_00601 | PanJit |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 63.8A; DFN5060-8 Mounting: SMD Drain current: 63.8A Kind of channel: enhancement Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: 20V Kind of package: reel; tape Case: DFN5060-8 Polarisation: unipolar |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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SBA230AL_R1_00001 | PanJit |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 2A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.53V Max. forward impulse current: 30A Kind of package: reel; tape Features of semiconductor devices: fast switching Leakage current: 5.6mA |
auf Bestellung 2240 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BZX584C2V4-AU_R1_000A1 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 2.4V; SMD; SOD523; single diode; reel,tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 2.4V Mounting: SMD Tolerance: ±5% Case: SOD523 Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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P6SMBJ6.5A_R1_00001 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 7.22÷7.98V; 53.6A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6.5V Breakdown voltage: 7.22...7.98V Max. forward impulse current: 53.6A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.5mA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P6SMBJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BZX84C30-AU_R1_000A1 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 410mW; 30V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.41W Zener voltage: 30V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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BZX84C30_R1_00501 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 410mW; 30V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.41W Zener voltage: 30V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PMSM808LL_R2_00301 | PanJit |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 150A; M6 Type of bridge rectifier: single-phase Max. forward impulse current: 150A Max. forward voltage: 1V Max. off-state voltage: 0.8kV Electrical mounting: SMT Load current: 8A Case: M6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| PMSM408_R2_00301 | PanJit |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 120A; M6 Type of bridge rectifier: single-phase Max. forward impulse current: 120A Max. forward voltage: 1V Max. off-state voltage: 0.8kV Electrical mounting: SMT Load current: 4A Case: M6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| PMSM410_R2_00301 | PanJit |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 120A; M6 Type of bridge rectifier: single-phase Max. forward impulse current: 120A Max. forward voltage: 1V Max. off-state voltage: 1kV Electrical mounting: SMT Load current: 4A Case: M6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| PMSM610_R2_00301 | PanJit |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 150A; M6 Type of bridge rectifier: single-phase Max. forward impulse current: 150A Max. forward voltage: 1V Max. off-state voltage: 1kV Electrical mounting: SMT Load current: 6A Case: M6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| PMSM808_R2_00301 | PanJit |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 150A; M6 Type of bridge rectifier: single-phase Max. forward impulse current: 150A Max. forward voltage: 1V Max. off-state voltage: 0.8kV Electrical mounting: SMT Load current: 8A Case: M6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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P4SMAJ10A_R1_00001 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; unidirectional; SMA; P4SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.3V Max. forward impulse current: 23.5A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P4SMAJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BC847C_R1_00001 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Pulsed collector current: 0.2A Current gain: 420...800 Mounting: SMD Kind of package: reel; tape |
auf Bestellung 1652 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BC847CW_R1_00001 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.25W; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.25W Case: SOT323 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BC847C-AU_R1_000A1 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.1A; SOT23; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Case: SOT23 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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1SS417TM_R1_00001 | PanJit |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD923; SMD; 45V; 0.1A; reel,tape; 100mW Case: SOD923 Max. forward impulse current: 1A Max. forward voltage: 0.62V Power dissipation: 0.1W Max. off-state voltage: 45V Load current: 0.1A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 5µA Type of diode: Schottky switching Mounting: SMD |
auf Bestellung 31926 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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ZMM55-B24_R1_10001 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 500mW; 24V; SMD; LL34,MiniMELF; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 24V Mounting: SMD Tolerance: ±2% Case: LL34; MiniMELF Semiconductor structure: single diode Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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P6SMBJ51CA-AU_R1_000A1 | PanJit |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 56.7÷62.7V; 7.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 51V Breakdown voltage: 56.7...62.7V Max. forward impulse current: 7.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P6SMBJ Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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P6SMBJ51CA_R1_00001 | PanJit |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 56.7÷62.7V; 7.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 51V Breakdown voltage: 56.7...62.7V Max. forward impulse current: 7.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P6SMBJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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3.0SMCJ22CA-AU_R1_000A1 | PanJit |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 24.4÷28V; 84.4A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 22V Breakdown voltage: 24.4...28V Max. forward impulse current: 84.4A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 3µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: 3.0SMCJ Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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1.5SMCJ22CA-AU_R1_000A1 | PanJit |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 24.4÷28V; 42.2A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 22V Breakdown voltage: 24.4...28V Max. forward impulse current: 42.2A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: 1.5SMCJ Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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P4SMAJ210A_R1_00001 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 231÷268.8V; 1.2A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 210V Breakdown voltage: 231...268.8V Max. forward impulse current: 1.2A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P4SMAJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SS12L_R2_00001 | PanJit |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; subSMA; SMD; 20V; 1A; reel,tape Mounting: SMD Max. forward impulse current: 30A Max. forward voltage: 0.45V Max. off-state voltage: 20V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Case: subSMA Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SS12_R1_00001 | PanJit |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 20V; 1A; reel,tape Mounting: SMD Max. forward impulse current: 30A Max. forward voltage: 0.5V Max. off-state voltage: 20V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 6mA Case: SMA Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MER3DMB_R2_00601 | PanJit |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 3A; 35ns; SMB; Ufmax: 0.95V; Ifsm: 75A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 3A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMB Max. forward voltage: 0.95V Max. forward impulse current: 75A Leakage current: 50µA Kind of package: reel; tape |
auf Bestellung 2995 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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PBHV8110DA-AU_R1_000A1 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23 Mounting: SMD Collector-emitter voltage: 100V Power dissipation: 1.25W Polarisation: bipolar Pulsed collector current: 3A Type of transistor: NPN Current gain: 100...300 Kind of package: reel; tape Case: SOT23 Frequency: 100MHz Collector current: 1A |
auf Bestellung 1400 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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PJA3461-AU_R1_000A1 | PanJit |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; Idm: -7.6A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -1.9A Pulsed drain current: -7.6A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.22Ω Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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P4SMAJ220CA_R1_00001 | PanJit |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 242÷272V; 1.1A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 220V Breakdown voltage: 242...272V Max. forward impulse current: 1.1A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P4SMAJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PJL9850_R2_00001 | PanJit |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 5.4A; Idm: 20A; 1.7W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 5.4A Power dissipation: 1.7W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 44mΩ Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: 20A Gate charge: 4.4nC |
auf Bestellung 5047 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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PJA3415A-AU_R1_000A1 | PanJit |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.5A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 88mΩ Mounting: SMD Kind of channel: enhancement Application: automotive industry Kind of package: reel; tape Pulsed drain current: -18A Gate charge: 10nC |
auf Bestellung 788 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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PJA3441-AU_R1_000A1 | PanJit |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -3.1A; Idm: -12.4A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -3.1A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 108mΩ Mounting: SMD Kind of channel: enhancement Application: automotive industry Kind of package: reel; tape Pulsed drain current: -12.4A Gate charge: 6nC |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MBR2200_AY_00001 | PanJit |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 200V; 2A; DO15; Ufmax: 0.9V Mounting: THT Max. forward impulse current: 50A Max. forward voltage: 0.9V Max. off-state voltage: 200V Load current: 2A Kind of package: Ammo Pack Semiconductor structure: single diode Leakage current: 20mA Case: DO15 Type of diode: Schottky rectifying |
auf Bestellung 2904 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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PJQ5544-AU_R2_002A1 | PanJit |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 520A; 100W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 130A Pulsed drain current: 520A Power dissipation: 100W Case: DFN5060-8 Gate-source voltage: ±20V On-state resistance: 4.3mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 41nC Application: automotive industry |
auf Bestellung 1922 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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US1G_R1_00001 | PanJit |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SMA; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Case: SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Leakage current: 0.1mA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PJB120N04V-AU_R2_002A1 | PanJit |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 166A; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 166A Case: TO220AB Gate-source voltage: 20V Mounting: SMD Kind of channel: enhancement Application: automotive industry Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| PJB120N04S-AU_R2_002A1 | PanJit |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 58A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 58A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of channel: enhancement Application: automotive industry Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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MER1DMB_R2_00601 | PanJit |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMB; Ufmax: 0.95V; Ifsm: 35A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMB Max. forward voltage: 0.95V Max. forward impulse current: 35A Leakage current: 20µA Kind of package: reel; tape |
auf Bestellung 2969 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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PJMF210N65EC_T0_00601 | PanJit |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 32W; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19A Power dissipation: 32W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: THT Gate charge: 34nC Kind of channel: enhancement Kind of package: tube Pulsed drain current: 42A |
auf Bestellung 46 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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PJMB210N65EC_R2_00601 | PanJit |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19A Power dissipation: 150W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: SMD Gate charge: 34nC Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: 42A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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PJMP210N65EC_T0_00601 | PanJit |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: THT Gate charge: 34nC Kind of channel: enhancement Kind of package: tube Pulsed drain current: 42A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BC847B_R1_00001 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Pulsed collector current: 0.2A |
auf Bestellung 1870 Stücke: Lieferzeit 14-21 Tag (e) |
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1SMA4744-AU_R1_000A1 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 15V; SMD; SMA; single diode; reel,tape Type of diode: Zener Power dissipation: 1W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Case: SMA Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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BC859C_R1_00001 | PanJit |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 30V; 0.1A; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Case: SOT23 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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PJA3441_R1_00501 | PanJit |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -3.1A; Idm: -12.4A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -3.1A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 108mΩ Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: -12.4A Gate charge: 6nC |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SM6S43A-AU_R2_000A1 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 4.6kW; 47.8÷52.8V; 66A; unidirectional; DO218AB; SM6S Type of diode: TVS Peak pulse power dissipation: 4.6kW Max. off-state voltage: 43V Breakdown voltage: 47.8...52.8V Max. forward impulse current: 66A Semiconductor structure: unidirectional Case: DO218AB Mounting: SMD Leakage current: 0.5µA Application: automotive industry Kind of package: reel; tape Manufacturer series: SM6S |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 600 Stücke Im Einkaufswagen Stück im Wert von UAH |
| PJD25N10A_L2_00601 | PanJit |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 25A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 25A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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1.5SMCJ60A_R2_00001 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 66.7÷76.7V; 15.5A; unidirectional; SMC; 1.5SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 60V Breakdown voltage: 66.7...76.7V Max. forward impulse current: 15.5A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: 1.5SMCJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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3.0SMCJ60A_R2_00001 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 66.7÷76.7V; 31A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 60V Breakdown voltage: 66.7...76.7V Max. forward impulse current: 31A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 3µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: 3.0SMCJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MMBT3906W_R1_00001 | PanJit |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 0.2A; SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Case: SOT323 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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MMBT3906-AU_R1_005A1 | PanJit |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 0.2A; SOT23; automotive industry Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Case: SOT23 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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MMBT3906_R1_00501 | PanJit |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 0.2A; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Case: SOT23 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| MMBT3906FN3_R1_00501 | PanJit |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 0.2A; DFN1006-3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Case: DFN1006-3 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| PJD45P04-AU_L2_006A1 | PanJit |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 45A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 45A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
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PJD45P04_L2_00001 | PanJit |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -45A; Idm: -135A; 63W; TO252AA Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -45A Pulsed drain current: -135A Power dissipation: 63W Case: TO252AA Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| P4KE16A_R2_00001 |
|
Hersteller: PanJit
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 15.2÷16.8V; 19A; unidirectional; DO41; P4KE
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13.6V
Breakdown voltage: 15.2...16.8V
Max. forward impulse current: 19A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Leakage current: 1µA
Manufacturer series: P4KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 15.2÷16.8V; 19A; unidirectional; DO41; P4KE
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13.6V
Breakdown voltage: 15.2...16.8V
Max. forward impulse current: 19A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Leakage current: 1µA
Manufacturer series: P4KE
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| PMSM608_R2_00301 |
Hersteller: PanJit
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 150A; M6
Type of bridge rectifier: single-phase
Max. forward impulse current: 150A
Max. forward voltage: 1V
Max. off-state voltage: 0.8kV
Electrical mounting: SMT
Load current: 6A
Case: M6
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 150A; M6
Type of bridge rectifier: single-phase
Max. forward impulse current: 150A
Max. forward voltage: 1V
Max. off-state voltage: 0.8kV
Electrical mounting: SMT
Load current: 6A
Case: M6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC847BPNTB6_S1_00701 |
Hersteller: PanJit
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 45V; 0.1A; 0.2W; SOT563
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 45V; 0.1A; 0.2W; SOT563
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC847BPN-AU_R1_000A1 |
|
Hersteller: PanJit
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 45V; 0.1A; 0.2W; SOT363
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 45V; 0.1A; 0.2W; SOT363
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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| BC847BPNTB6_R1_00701 |
|
Hersteller: PanJit
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT563
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT563
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC847BPNTB6_R2_00701 |
Hersteller: PanJit
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT563
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT563
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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| PSMQE070N08LS2_R2_00601 |
|
Hersteller: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 63.8A; DFN5060-8
Mounting: SMD
Drain current: 63.8A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN5060-8
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 63.8A; DFN5060-8
Mounting: SMD
Drain current: 63.8A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN5060-8
Polarisation: unipolar
Produkt ist nicht verfügbar
Mindestbestellmenge: 30000 Stücke
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| SBA230AL_R1_00001 |
|
Hersteller: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.53V
Max. forward impulse current: 30A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Leakage current: 5.6mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.53V
Max. forward impulse current: 30A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Leakage current: 5.6mA
auf Bestellung 2240 Stücke:
Lieferzeit 14-21 Tag (e)
| BZX584C2V4-AU_R1_000A1 |
|
Hersteller: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 2.4V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 2.4V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
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| P6SMBJ6.5A_R1_00001 |
|
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 7.22÷7.98V; 53.6A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 53.6A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 7.22÷7.98V; 53.6A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 53.6A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
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| BZX84C30-AU_R1_000A1 |
|
Hersteller: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 30V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 30V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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| BZX84C30_R1_00501 |
|
Hersteller: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 30V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 30V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| PMSM808LL_R2_00301 |
Hersteller: PanJit
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 150A; M6
Type of bridge rectifier: single-phase
Max. forward impulse current: 150A
Max. forward voltage: 1V
Max. off-state voltage: 0.8kV
Electrical mounting: SMT
Load current: 8A
Case: M6
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 150A; M6
Type of bridge rectifier: single-phase
Max. forward impulse current: 150A
Max. forward voltage: 1V
Max. off-state voltage: 0.8kV
Electrical mounting: SMT
Load current: 8A
Case: M6
Produkt ist nicht verfügbar
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| PMSM408_R2_00301 |
Hersteller: PanJit
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 120A; M6
Type of bridge rectifier: single-phase
Max. forward impulse current: 120A
Max. forward voltage: 1V
Max. off-state voltage: 0.8kV
Electrical mounting: SMT
Load current: 4A
Case: M6
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 120A; M6
Type of bridge rectifier: single-phase
Max. forward impulse current: 120A
Max. forward voltage: 1V
Max. off-state voltage: 0.8kV
Electrical mounting: SMT
Load current: 4A
Case: M6
Produkt ist nicht verfügbar
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| PMSM410_R2_00301 |
Hersteller: PanJit
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 120A; M6
Type of bridge rectifier: single-phase
Max. forward impulse current: 120A
Max. forward voltage: 1V
Max. off-state voltage: 1kV
Electrical mounting: SMT
Load current: 4A
Case: M6
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 120A; M6
Type of bridge rectifier: single-phase
Max. forward impulse current: 120A
Max. forward voltage: 1V
Max. off-state voltage: 1kV
Electrical mounting: SMT
Load current: 4A
Case: M6
Produkt ist nicht verfügbar
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| PMSM610_R2_00301 |
Hersteller: PanJit
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 150A; M6
Type of bridge rectifier: single-phase
Max. forward impulse current: 150A
Max. forward voltage: 1V
Max. off-state voltage: 1kV
Electrical mounting: SMT
Load current: 6A
Case: M6
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 150A; M6
Type of bridge rectifier: single-phase
Max. forward impulse current: 150A
Max. forward voltage: 1V
Max. off-state voltage: 1kV
Electrical mounting: SMT
Load current: 6A
Case: M6
Produkt ist nicht verfügbar
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| PMSM808_R2_00301 |
Hersteller: PanJit
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 150A; M6
Type of bridge rectifier: single-phase
Max. forward impulse current: 150A
Max. forward voltage: 1V
Max. off-state voltage: 0.8kV
Electrical mounting: SMT
Load current: 8A
Case: M6
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 150A; M6
Type of bridge rectifier: single-phase
Max. forward impulse current: 150A
Max. forward voltage: 1V
Max. off-state voltage: 0.8kV
Electrical mounting: SMT
Load current: 8A
Case: M6
Produkt ist nicht verfügbar
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| P4SMAJ10A_R1_00001 |
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 23.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 23.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
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| BC847C_R1_00001 |
|
Hersteller: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Pulsed collector current: 0.2A
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Pulsed collector current: 0.2A
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 1652 Stücke:
Lieferzeit 14-21 Tag (e)
| BC847CW_R1_00001 |
|
Hersteller: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.25W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.25W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC847C-AU_R1_000A1 |
|
Hersteller: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; SOT23; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; SOT23; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1SS417TM_R1_00001 |
|
Hersteller: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD923; SMD; 45V; 0.1A; reel,tape; 100mW
Case: SOD923
Max. forward impulse current: 1A
Max. forward voltage: 0.62V
Power dissipation: 0.1W
Max. off-state voltage: 45V
Load current: 0.1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 5µA
Type of diode: Schottky switching
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD923; SMD; 45V; 0.1A; reel,tape; 100mW
Case: SOD923
Max. forward impulse current: 1A
Max. forward voltage: 0.62V
Power dissipation: 0.1W
Max. off-state voltage: 45V
Load current: 0.1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 5µA
Type of diode: Schottky switching
Mounting: SMD
auf Bestellung 31926 Stücke:
Lieferzeit 14-21 Tag (e)
| ZMM55-B24_R1_10001 |
Hersteller: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 24V; SMD; LL34,MiniMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±2%
Case: LL34; MiniMELF
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 24V; SMD; LL34,MiniMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±2%
Case: LL34; MiniMELF
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ51CA-AU_R1_000A1 |
|
Hersteller: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 56.7÷62.7V; 7.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 7.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 56.7÷62.7V; 7.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 7.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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Stück im Wert von UAH
| P6SMBJ51CA_R1_00001 |
|
Hersteller: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 56.7÷62.7V; 7.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 7.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 56.7÷62.7V; 7.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 7.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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Stück im Wert von UAH
| 3.0SMCJ22CA-AU_R1_000A1 |
|
Hersteller: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 24.4÷28V; 84.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 84.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 24.4÷28V; 84.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 84.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1.5SMCJ22CA-AU_R1_000A1 |
|
Hersteller: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 24.4÷28V; 42.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 42.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 24.4÷28V; 42.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 42.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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Stück im Wert von UAH
| P4SMAJ210A_R1_00001 |
|
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 231÷268.8V; 1.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 210V
Breakdown voltage: 231...268.8V
Max. forward impulse current: 1.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 231÷268.8V; 1.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 210V
Breakdown voltage: 231...268.8V
Max. forward impulse current: 1.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
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Stück im Wert von UAH
| SS12L_R2_00001 |
|
Hersteller: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 20V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 0.45V
Max. off-state voltage: 20V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: subSMA
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 20V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 0.45V
Max. off-state voltage: 20V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: subSMA
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SS12_R1_00001 |
|
Hersteller: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 20V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 0.5V
Max. off-state voltage: 20V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 6mA
Case: SMA
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 20V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 0.5V
Max. off-state voltage: 20V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 6mA
Case: SMA
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MER3DMB_R2_00601 |
|
Hersteller: PanJit
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 35ns; SMB; Ufmax: 0.95V; Ifsm: 75A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 0.95V
Max. forward impulse current: 75A
Leakage current: 50µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 35ns; SMB; Ufmax: 0.95V; Ifsm: 75A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 0.95V
Max. forward impulse current: 75A
Leakage current: 50µA
Kind of package: reel; tape
auf Bestellung 2995 Stücke:
Lieferzeit 14-21 Tag (e)
| PBHV8110DA-AU_R1_000A1 |
|
Hersteller: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23
Mounting: SMD
Collector-emitter voltage: 100V
Power dissipation: 1.25W
Polarisation: bipolar
Pulsed collector current: 3A
Type of transistor: NPN
Current gain: 100...300
Kind of package: reel; tape
Case: SOT23
Frequency: 100MHz
Collector current: 1A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23
Mounting: SMD
Collector-emitter voltage: 100V
Power dissipation: 1.25W
Polarisation: bipolar
Pulsed collector current: 3A
Type of transistor: NPN
Current gain: 100...300
Kind of package: reel; tape
Case: SOT23
Frequency: 100MHz
Collector current: 1A
auf Bestellung 1400 Stücke:
Lieferzeit 14-21 Tag (e)
| PJA3461-AU_R1_000A1 |
|
Hersteller: PanJit
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; Idm: -7.6A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.9A
Pulsed drain current: -7.6A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; Idm: -7.6A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.9A
Pulsed drain current: -7.6A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P4SMAJ220CA_R1_00001 |
Hersteller: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 242÷272V; 1.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 220V
Breakdown voltage: 242...272V
Max. forward impulse current: 1.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 242÷272V; 1.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 220V
Breakdown voltage: 242...272V
Max. forward impulse current: 1.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PJL9850_R2_00001 |
|
Hersteller: PanJit
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 5.4A; Idm: 20A; 1.7W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 5.4A
Power dissipation: 1.7W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 20A
Gate charge: 4.4nC
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 5.4A; Idm: 20A; 1.7W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 5.4A
Power dissipation: 1.7W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 20A
Gate charge: 4.4nC
auf Bestellung 5047 Stücke:
Lieferzeit 14-21 Tag (e)
| PJA3415A-AU_R1_000A1 |
|
Hersteller: PanJit
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 88mΩ
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Kind of package: reel; tape
Pulsed drain current: -18A
Gate charge: 10nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 88mΩ
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Kind of package: reel; tape
Pulsed drain current: -18A
Gate charge: 10nC
auf Bestellung 788 Stücke:
Lieferzeit 14-21 Tag (e)
| PJA3441-AU_R1_000A1 |
|
Hersteller: PanJit
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.1A; Idm: -12.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.1A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 108mΩ
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Kind of package: reel; tape
Pulsed drain current: -12.4A
Gate charge: 6nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.1A; Idm: -12.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.1A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 108mΩ
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Kind of package: reel; tape
Pulsed drain current: -12.4A
Gate charge: 6nC
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
| MBR2200_AY_00001 |
Hersteller: PanJit
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 2A; DO15; Ufmax: 0.9V
Mounting: THT
Max. forward impulse current: 50A
Max. forward voltage: 0.9V
Max. off-state voltage: 200V
Load current: 2A
Kind of package: Ammo Pack
Semiconductor structure: single diode
Leakage current: 20mA
Case: DO15
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 2A; DO15; Ufmax: 0.9V
Mounting: THT
Max. forward impulse current: 50A
Max. forward voltage: 0.9V
Max. off-state voltage: 200V
Load current: 2A
Kind of package: Ammo Pack
Semiconductor structure: single diode
Leakage current: 20mA
Case: DO15
Type of diode: Schottky rectifying
auf Bestellung 2904 Stücke:
Lieferzeit 14-21 Tag (e)
| PJQ5544-AU_R2_002A1 |
|
Hersteller: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 520A; 100W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 520A
Power dissipation: 100W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 41nC
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 520A; 100W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 520A
Power dissipation: 100W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 41nC
Application: automotive industry
auf Bestellung 1922 Stücke:
Lieferzeit 14-21 Tag (e)
| US1G_R1_00001 |
|
Hersteller: PanJit
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Leakage current: 0.1mA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Leakage current: 0.1mA
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJB120N04V-AU_R2_002A1 |
|
Hersteller: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 166A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 166A
Case: TO220AB
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 166A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 166A
Case: TO220AB
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PJB120N04S-AU_R2_002A1 |
Hersteller: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 58A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 58A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MER1DMB_R2_00601 |
|
Hersteller: PanJit
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMB; Ufmax: 0.95V; Ifsm: 35A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 0.95V
Max. forward impulse current: 35A
Leakage current: 20µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMB; Ufmax: 0.95V; Ifsm: 35A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 0.95V
Max. forward impulse current: 35A
Leakage current: 20µA
Kind of package: reel; tape
auf Bestellung 2969 Stücke:
Lieferzeit 14-21 Tag (e)
| PJMF210N65EC_T0_00601 |
|
Hersteller: PanJit
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 32W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 32W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 34nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 42A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 32W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 32W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 34nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 42A
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
| PJMB210N65EC_R2_00601 |
|
Hersteller: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 42A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 42A
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| PJMP210N65EC_T0_00601 |
|
Hersteller: PanJit
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 34nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 42A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 34nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 42A
Produkt ist nicht verfügbar
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| BC847B_R1_00001 |
|
Hersteller: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 0.2A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 0.2A
auf Bestellung 1870 Stücke:
Lieferzeit 14-21 Tag (e)
| 1SMA4744-AU_R1_000A1 |
|
Hersteller: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 15V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 15V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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| BC859C_R1_00001 |
|
Hersteller: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| PJA3441_R1_00501 |
Hersteller: PanJit
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.1A; Idm: -12.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.1A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 108mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: -12.4A
Gate charge: 6nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.1A; Idm: -12.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.1A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 108mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: -12.4A
Gate charge: 6nC
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| SM6S43A-AU_R2_000A1 |
|
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 4.6kW; 47.8÷52.8V; 66A; unidirectional; DO218AB; SM6S
Type of diode: TVS
Peak pulse power dissipation: 4.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 66A
Semiconductor structure: unidirectional
Case: DO218AB
Mounting: SMD
Leakage current: 0.5µA
Application: automotive industry
Kind of package: reel; tape
Manufacturer series: SM6S
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 4.6kW; 47.8÷52.8V; 66A; unidirectional; DO218AB; SM6S
Type of diode: TVS
Peak pulse power dissipation: 4.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 66A
Semiconductor structure: unidirectional
Case: DO218AB
Mounting: SMD
Leakage current: 0.5µA
Application: automotive industry
Kind of package: reel; tape
Manufacturer series: SM6S
Produkt ist nicht verfügbar
Mindestbestellmenge: 600 Stücke
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| PJD25N10A_L2_00601 |
Hersteller: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| 1.5SMCJ60A_R2_00001 |
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 66.7÷76.7V; 15.5A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...76.7V
Max. forward impulse current: 15.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 66.7÷76.7V; 15.5A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...76.7V
Max. forward impulse current: 15.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| 3.0SMCJ60A_R2_00001 |
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 66.7÷76.7V; 31A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...76.7V
Max. forward impulse current: 31A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 66.7÷76.7V; 31A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...76.7V
Max. forward impulse current: 31A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| MMBT3906W_R1_00001 |
Hersteller: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| MMBT3906-AU_R1_005A1 |
Hersteller: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; SOT23; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; SOT23; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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| MMBT3906_R1_00501 |
Hersteller: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| MMBT3906FN3_R1_00501 |
|
Hersteller: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; DFN1006-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Case: DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; DFN1006-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Case: DFN1006-3
Mounting: SMD
Kind of package: reel; tape
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| PJD45P04-AU_L2_006A1 |
Hersteller: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 45A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 45A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 45A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 45A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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| PJD45P04_L2_00001 |
|
Hersteller: PanJit
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -45A; Idm: -135A; 63W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -45A
Pulsed drain current: -135A
Power dissipation: 63W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -45A; Idm: -135A; 63W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -45A
Pulsed drain current: -135A
Power dissipation: 63W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
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