Suchergebnisse für "0068104" : 14

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SPP11N60C3XKSA1 SPP11N60C3XKSA1 Infineon Technologies SPP_I_A11N60C3_E8185_Rev[1].3.1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a3043163797a6011638a2fdee01a3 Description: MOSFET N-CH 650V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 975 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.44 EUR
50+ 4.31 EUR
100+ 3.7 EUR
500+ 3.29 EUR
Mindestbestellmenge: 4
SPP11N60C3XKSA1 SPP11N60C3XKSA1 Infineon Technologies 61058469320588dgdlfolderid5546d4694909da4801490a07012f053bfileiddb3a304412b4079.pdf Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 8034 Stücke:
Lieferzeit 14-21 Tag (e)
SPP11N60C3XKSA1 SPP11N60C3XKSA1 Infineon Technologies Infineon_SPP_I_A11N60C3_DS_v03_03_EN-3363801.pdf MOSFET N-Ch 600V 11A TO220-3
auf Bestellung 266 Stücke:
Lieferzeit 14-28 Tag (e)
7+7.98 EUR
10+ 7.96 EUR
25+ 6.34 EUR
100+ 5.43 EUR
500+ 4.81 EUR
1000+ 3.9 EUR
Mindestbestellmenge: 7
SPP11N60CFDXKSA1 SPP11N60CFDXKSA1 Infineon Technologies spp11n60cfd_rev.2.7.pdf Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
SPP12N50C3XKSA1 SPP12N50C3XKSA1 Infineon Technologies SPx12N50C3.pdf Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 10979 Stücke:
Lieferzeit 10-14 Tag (e)
268+1.85 EUR
Mindestbestellmenge: 268
5068104006 5068104006 TE Connectivity eng_cs_cgpt_9-1773447-9_0811_cgpt_9-1773447-9_0811.pdf Heat Shrink Tubing
Produkt ist nicht verfügbar
SPP11N60CFDXKSA1 SPP11N60CFDXKSA1 Infineon Technologies SPP11N60CFD_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42bfcec4645 Description: MOSFET N-CH 650V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 500µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
SPP11N60CFDXKSA1 SPP11N60CFDXKSA1 Infineon Technologies SPP11N60CFD_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42bfcec4645 MOSFET N-Ch 650V 11A TO220-3
Produkt ist nicht verfügbar
SPP11N60S5XKSA1 SPP11N60S5XKSA1 Infineon Technologies SPP_I11N60S5_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d978048a7 Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 500µA
Supplier Device Package: PG-TO220-3-1
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
Produkt ist nicht verfügbar
SPP11N60S5XKSA1 SPP11N60S5XKSA1 Infineon Technologies spp_i11n60s5_rev.2.7.pdf Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220 Tube
Produkt ist nicht verfügbar
SPP11N65C3XKSA1 SPP11N65C3XKSA1 Infineon Technologies SP(P,A,I)11N65C3.pdf Description: MOSFET N-CH 650V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
SPP11N65C3XKSA1 SPP11N65C3XKSA1 Infineon Technologies spp_a_i11n65c3_rev.2.91.pdf Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220 Tube
Produkt ist nicht verfügbar
SPP12N50C3XKSA1 SPP12N50C3XKSA1 Infineon Technologies SPx12N50C3.pdf Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
SPP12N50C3XKSA1 SPP12N50C3XKSA1 Infineon Technologies spp_i_a12n50c3_rev.3.1.pdf Trans MOSFET N-CH 500V 11.6A 3-Pin(3+Tab) TO-220AB Tube
Produkt ist nicht verfügbar
SPP11N60C3XKSA1 SPP_I_A11N60C3_E8185_Rev[1].3.1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a3043163797a6011638a2fdee01a3
SPP11N60C3XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 975 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.44 EUR
50+ 4.31 EUR
100+ 3.7 EUR
500+ 3.29 EUR
Mindestbestellmenge: 4
SPP11N60C3XKSA1 61058469320588dgdlfolderid5546d4694909da4801490a07012f053bfileiddb3a304412b4079.pdf
SPP11N60C3XKSA1
Hersteller: Infineon Technologies
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 8034 Stücke:
Lieferzeit 14-21 Tag (e)
SPP11N60C3XKSA1 Infineon_SPP_I_A11N60C3_DS_v03_03_EN-3363801.pdf
SPP11N60C3XKSA1
Hersteller: Infineon Technologies
MOSFET N-Ch 600V 11A TO220-3
auf Bestellung 266 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
7+7.98 EUR
10+ 7.96 EUR
25+ 6.34 EUR
100+ 5.43 EUR
500+ 4.81 EUR
1000+ 3.9 EUR
Mindestbestellmenge: 7
SPP11N60CFDXKSA1 spp11n60cfd_rev.2.7.pdf
SPP11N60CFDXKSA1
Hersteller: Infineon Technologies
Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
SPP12N50C3XKSA1 SPx12N50C3.pdf
SPP12N50C3XKSA1
Hersteller: Infineon Technologies
Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 10979 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
268+1.85 EUR
Mindestbestellmenge: 268
5068104006 eng_cs_cgpt_9-1773447-9_0811_cgpt_9-1773447-9_0811.pdf
5068104006
Hersteller: TE Connectivity
Heat Shrink Tubing
Produkt ist nicht verfügbar
SPP11N60CFDXKSA1 SPP11N60CFD_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42bfcec4645
SPP11N60CFDXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 500µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
SPP11N60CFDXKSA1 SPP11N60CFD_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42bfcec4645
SPP11N60CFDXKSA1
Hersteller: Infineon Technologies
MOSFET N-Ch 650V 11A TO220-3
Produkt ist nicht verfügbar
SPP11N60S5XKSA1 SPP_I11N60S5_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d978048a7
SPP11N60S5XKSA1
Hersteller: Infineon Technologies
Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 500µA
Supplier Device Package: PG-TO220-3-1
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
Produkt ist nicht verfügbar
SPP11N60S5XKSA1 spp_i11n60s5_rev.2.7.pdf
SPP11N60S5XKSA1
Hersteller: Infineon Technologies
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220 Tube
Produkt ist nicht verfügbar
SPP11N65C3XKSA1 SP(P,A,I)11N65C3.pdf
SPP11N65C3XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
SPP11N65C3XKSA1 spp_a_i11n65c3_rev.2.91.pdf
SPP11N65C3XKSA1
Hersteller: Infineon Technologies
Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220 Tube
Produkt ist nicht verfügbar
SPP12N50C3XKSA1 SPx12N50C3.pdf
SPP12N50C3XKSA1
Hersteller: Infineon Technologies
Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
SPP12N50C3XKSA1 spp_i_a12n50c3_rev.3.1.pdf
SPP12N50C3XKSA1
Hersteller: Infineon Technologies
Trans MOSFET N-CH 500V 11.6A 3-Pin(3+Tab) TO-220AB Tube
Produkt ist nicht verfügbar