10A05 EIC SEMICONDUCTOR INC.

Description: DIODE GEN PURP 600V 10A D6, Current - Reverse Leakage @ Vr: 10 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 600 V, Part Status: Active, Operating Temperature - Junction: -65°C ~ 150°C, Supplier Device Package: D6, Current - Average Rectified (Io): 10A, Capacitance @ Vr, F: 80pF @ 4V, 1MHz, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: D-6, Axial, Packaging: Tape & Reel (TR).