1N459-T50R onsemi
Hersteller: onsemi
Description: DIODE GEN PURP 200V 500MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 6pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 175 V
| Anzahl | Preis |
|---|---|
| 11539+ | 0.049 EUR |
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Technische Details 1N459-T50R onsemi
Description: DIODE GEN PURP 200V 500MA DO35, Voltage - DC Reverse (Vr) (Max): 200 V, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: DO-204AH (DO-35), Current - Average Rectified (Io): 500mA, Capacitance @ Vr, F: 6pF @ 0V, 1MHz, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: DO-204AH, DO-35, Axial, Packaging: Bulk, Current - Reverse Leakage @ Vr: 25 nA @ 175 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA.
Weitere Produktangebote 1N459-T50R nach Preis ab 0.049 EUR bis 0.049 EUR
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1N459-T50R | Fairchild Semiconductor |
Description: DIODE GEN PURP 200V 500MA DO35 Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: 175°C (Max) Supplier Device Package: DO-204AH (DO-35) Current - Average Rectified (Io): 500mA Capacitance @ Vr, F: 6pF @ 0V, 1MHz Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Packaging: Bulk Current - Reverse Leakage @ Vr: 25 nA @ 175 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA |
auf Bestellung 60000 Stücke: Lieferzeit 10-14 Tag (e) |
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1N459_T50R | Fairchild Semiconductor |
Description: DIODE GEN PURPOSE 200V 0.5A DO35 |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| 1N459-T50R |
|
Hersteller: Fairchild Semiconductor
Description: DIODE GEN PURP 200V 500MA DO35
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-204AH (DO-35)
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 6pF @ 0V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 nA @ 175 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Description: DIODE GEN PURP 200V 500MA DO35
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-204AH (DO-35)
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 6pF @ 0V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 nA @ 175 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11539+ | 0.049 EUR |
| 1N459_T50R |
|
Hersteller: Fairchild Semiconductor
Description: DIODE GEN PURPOSE 200V 0.5A DO35
Description: DIODE GEN PURPOSE 200V 0.5A DO35
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH