Technische Details 2N6768 IR/MOT
Description: MOSFET N-CH 400V 14A TO3, Packaging: Bulk, Package / Case: TO-204AE, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 400mOhm @ 14A, 10V, Power Dissipation (Max): 4W (Ta), 150W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 400 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V.
Weitere Produktangebote 2N6768
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| 2N6768 | Hersteller : MOT |
 01+ TO-3 |
auf Bestellung 450 Stücke: Lieferzeit 21-28 Tag (e) |
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| 2N6768 | Hersteller : Semelab |
Trans MOSFET N-CH 400V 14A 3-Pin(2+Tab) TO-3 |
Produkt ist nicht verfügbar |
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2N6768 | Hersteller : Microsemi Corporation |
Description: MOSFET N-CH 400V 14A TO3 Packaging: Bulk Package / Case: TO-204AE Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 14A, 10V Power Dissipation (Max): 4W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V |
Produkt ist nicht verfügbar |
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2N6768 | Hersteller : Microchip Technology |
MOSFET N Channel MOSFET |
Produkt ist nicht verfügbar |
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2N6768 | Hersteller : Infineon / IR |
MOSFET |
Produkt ist nicht verfügbar |