Technische Details 2N6768 IR/MOT
Description: MOSFET N-CH 400V 14A TO3, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Drain to Source Voltage (Vdss): 400 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-3, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 4W (Ta), 150W (Tc), Rds On (Max) @ Id, Vgs: 400mOhm @ 14A, 10V, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-204AE, Packaging: Bulk.
Weitere Produktangebote 2N6768
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
2N6768 | Hersteller : Microsemi Corporation |
Description: MOSFET N-CH 400V 14A TO3Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Drain to Source Voltage (Vdss): 400 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 4W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AE Packaging: Bulk |
Produkt ist nicht verfügbar |
|
|
2N6768 | Hersteller : Infineon / IR |
MOSFET |
Produkt ist nicht verfügbar |
|
|
2N6768 | Hersteller : Microchip Technology |
MOSFET N Channel MOSFET |
Produkt ist nicht verfügbar |



