Technische Details 2N2605 MOT
Description: TRANS PNP 60V 0.03A TO-46-3, Power - Max: 400 mW, Voltage - Collector Emitter Breakdown (Max): 60 V, Current - Collector (Ic) (Max): 30 mA, Supplier Device Package: TO-46-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V, Current - Collector Cutoff (Max): 10nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: TO-206AB, TO-46-3 Metal Can, Packaging: Bulk.
Weitere Produktangebote 2N2605
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
|
2N2605 | Microchip Technology |
Description: TRANS PNP 60V 0.03A TO-46-3Power - Max: 400 mW Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 30 mA Supplier Device Package: TO-46-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Current - Collector Cutoff (Max): 10nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-206AB, TO-46-3 Metal Can Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
2N2605 | Microchip Technology |
Bipolar Transistors - BJT 70V 30mA 400mW Small-Signal BJT THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 2N2605 |
![]() |
Hersteller: Microchip Technology
Description: TRANS PNP 60V 0.03A TO-46-3
Power - Max: 400 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 30 mA
Supplier Device Package: TO-46-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 10nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-206AB, TO-46-3 Metal Can
Packaging: Bulk
Description: TRANS PNP 60V 0.03A TO-46-3
Power - Max: 400 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 30 mA
Supplier Device Package: TO-46-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 10nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-206AB, TO-46-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2N2605 |
![]() |
Hersteller: Microchip Technology
Bipolar Transistors - BJT 70V 30mA 400mW Small-Signal BJT THT
Bipolar Transistors - BJT 70V 30mA 400mW Small-Signal BJT THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH



