Technische Details 2N2920A MOT
Description: TRANS 2NPN 30MA 60V TO78-6, Packaging: Bulk, Package / Case: TO-78-6 Metal Can, Mounting Type: Through Hole, Transistor Type: 2 NPN (Dual), Operating Temperature: -65°C ~ 200°C (TJ), Power - Max: 1.5W, Current - Collector (Ic) (Max): 30mA, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA, Current - Collector Cutoff (Max): 2nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V, Frequency - Transition: 60MHz, Supplier Device Package: TO-78-6.
Weitere Produktangebote 2N2920A
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| 2N2920A | Microchip Technology |
 Description: DUAL SMALL-SIGNAL BJTPackaging: Bulk Package / Case: TO-78-6 Metal Can Mounting Type: Through Hole Transistor Type: 2 NPN (Dual) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Supplier Device Package: TO-78-6 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
2N2920A | Central Semiconductor Corp |
Description: TRANS 2NPN 30MA 60V TO78-6 Packaging: Bulk Package / Case: TO-78-6 Metal Can Mounting Type: Through Hole Transistor Type: 2 NPN (Dual) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 1.5W Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA Current - Collector Cutoff (Max): 2nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Frequency - Transition: 60MHz Supplier Device Package: TO-78-6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 2N2920A | Microchip Technology |
Bipolar Transistors - BJT Dual Small-Signal BJT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
2N2920A | SOLID STATE |
Description: SOLID STATE - 2N2920A - Bipolares Transistor-Array, NPN, 60 V, 30 mA, 500 mW, 300 hFE, TO-206AF Transistormontage: Durchsteckmontage DC-Stromverstärkung hFE: 300 Verlustleistung Pd: 500 Bauform - Transistor: TO-206AF Kollektor-Emitter-Spannung V(br)ceo: 60 Anzahl der Pins: 7 Produktpalette: - Wandlerpolarität: NPN DC-Kollektorstrom: 30 Betriebstemperatur, max.: 200 SVHC: No SVHC (08-Jul-2021) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 2N2920A |
|
Hersteller: Microchip Technology
Description: DUAL SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Supplier Device Package: TO-78-6
Description: DUAL SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Supplier Device Package: TO-78-6
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2N2920A |
|
Hersteller: Central Semiconductor Corp
Description: TRANS 2NPN 30MA 60V TO78-6
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1.5W
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 2nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Frequency - Transition: 60MHz
Supplier Device Package: TO-78-6
Description: TRANS 2NPN 30MA 60V TO78-6
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1.5W
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 2nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Frequency - Transition: 60MHz
Supplier Device Package: TO-78-6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N2920A |
|
Hersteller: Microchip Technology
Bipolar Transistors - BJT Dual Small-Signal BJT
Bipolar Transistors - BJT Dual Small-Signal BJT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N2920A |
|
Hersteller: SOLID STATE
Description: SOLID STATE - 2N2920A - Bipolares Transistor-Array, NPN, 60 V, 30 mA, 500 mW, 300 hFE, TO-206AF
Transistormontage: Durchsteckmontage
DC-Stromverstärkung hFE: 300
Verlustleistung Pd: 500
Bauform - Transistor: TO-206AF
Kollektor-Emitter-Spannung V(br)ceo: 60
Anzahl der Pins: 7
Produktpalette: -
Wandlerpolarität: NPN
DC-Kollektorstrom: 30
Betriebstemperatur, max.: 200
SVHC: No SVHC (08-Jul-2021)
Description: SOLID STATE - 2N2920A - Bipolares Transistor-Array, NPN, 60 V, 30 mA, 500 mW, 300 hFE, TO-206AF
Transistormontage: Durchsteckmontage
DC-Stromverstärkung hFE: 300
Verlustleistung Pd: 500
Bauform - Transistor: TO-206AF
Kollektor-Emitter-Spannung V(br)ceo: 60
Anzahl der Pins: 7
Produktpalette: -
Wandlerpolarität: NPN
DC-Kollektorstrom: 30
Betriebstemperatur, max.: 200
SVHC: No SVHC (08-Jul-2021)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH