Technische Details 2N3767 MOT
Description: TRANS NPN 80V 500UA TO66, Power - Max: 25 W, Voltage - Collector Emitter Breakdown (Max): 80 V, Current - Collector (Ic) (Max): 500 µA, Part Status: Active, Supplier Device Package: TO-66 (TO-213AA), DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V, Current - Collector Cutoff (Max): 500µA, Vce Saturation (Max) @ Ib, Ic: 2.5V @ 100mA, 1A, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-213AA, TO-66-2, Packaging: Bulk.
Weitere Produktangebote 2N3767
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
2N3767 | Microchip Technology |
Description: TRANS NPN 80V 500UA TO66 Power - Max: 25 W Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 500 µA Part Status: Active Supplier Device Package: TO-66 (TO-213AA) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V Current - Collector Cutoff (Max): 500µA Vce Saturation (Max) @ Ib, Ic: 2.5V @ 100mA, 1A Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
2N3767 | Microchip Technology |
 Bipolar Transistors - BJT 80V 4A NPN Power BJT THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 2N3767 |
Hersteller: Microchip Technology
Description: TRANS NPN 80V 500UA TO66
Power - Max: 25 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 500 µA
Part Status: Active
Supplier Device Package: TO-66 (TO-213AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V
Current - Collector Cutoff (Max): 500µA
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 100mA, 1A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Packaging: Bulk
Description: TRANS NPN 80V 500UA TO66
Power - Max: 25 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 500 µA
Part Status: Active
Supplier Device Package: TO-66 (TO-213AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V
Current - Collector Cutoff (Max): 500µA
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 100mA, 1A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2N3767 |
|
Hersteller: Microchip Technology
Bipolar Transistors - BJT 80V 4A NPN Power BJT THT
Bipolar Transistors - BJT 80V 4A NPN Power BJT THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH