Technische Details 2N4854 MOT
Description: NPN/PNP SILICON COMP SMALL SIGNA, Packaging: Bulk, Package / Case: TO-78-6 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, PNP, Operating Temperature: -65°C ~ 200°C (TJ), Power - Max: 600mW, Current - Collector (Ic) (Max): 600mA, Voltage - Collector Emitter Breakdown (Max): 40V, Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Supplier Device Package: TO-78-6, Part Status: Active.
Weitere Produktangebote 2N4854
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| 2N4854 | Hersteller : MOT | CAN |
auf Bestellung 687 Stücke: Lieferzeit 21-28 Tag (e) |
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2N4854 | Hersteller : Microchip Technology |
 Trans GP BJT NPN/PNP 40V 0.6A 600mW 6-Pin TO-78 |
Produkt ist nicht verfügbar |
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2N4854 | Hersteller : Microchip Technology |
Trans GP BJT NPN/PNP 40V 0.6A 600mW 6-Pin TO-78 |
Produkt ist nicht verfügbar |
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2N4854 | Hersteller : Central Semiconductor Corp |
Description: TRANSISTOR DUAL TO78 Packaging: Bulk Package / Case: TO-78-6 Metal Can Mounting Type: Through Hole Supplier Device Package: TO-78-6 Part Status: Obsolete |
Produkt ist nicht verfügbar |
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2N4854 | Hersteller : Microchip Technology |
Description: NPN/PNP SILICON COMP SMALL SIGNA Packaging: Bulk Package / Case: TO-78-6 Metal Can Mounting Type: Through Hole Transistor Type: NPN, PNP Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 600mW Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-78-6 Part Status: Active |
Produkt ist nicht verfügbar |
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2N4854 | Hersteller : Microchip Technology |
Bipolar Transistors - BJT BJTs |
Produkt ist nicht verfügbar |
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| 2N4854 | Hersteller : Central Semiconductor | Central Semiconductor |
Produkt ist nicht verfügbar |