2N5210TF ON Semiconductor
auf Bestellung 35333 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 13275+ | 0.04 EUR |
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Technische Details 2N5210TF ON Semiconductor
Description: TRANS NPN 50V 0.1A TO-92-3, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 700mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 50nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100µA, 5V, Frequency - Transition: 30MHz, Supplier Device Package: TO-92-3, Part Status: Obsolete, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 625 mW.
Weitere Produktangebote 2N5210TF nach Preis ab 0.04 EUR bis 0.06 EUR
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2N5210TF | Hersteller : ON Semiconductor |
 Trans GP BJT NPN 50V 0.1A 625mW 3-Pin TO-92 T/R |
auf Bestellung 22000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N5210TF | Hersteller : Fairchild Semiconductor |
Description: TRANS NPN 50V 0.1A TO-92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 1mA, 10mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100µA, 5V Frequency - Transition: 30MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 625 mW |
auf Bestellung 57333 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2N5210TF | Hersteller : ONSEMI |
Description: ONSEMI - 2N5210TF - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 71333 Stücke: Lieferzeit 14-21 Tag (e) |
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2N5210TF | Hersteller : onsemi |
Description: TRANS NPN 50V 0.1A TO-92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 1mA, 10mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100µA, 5V Frequency - Transition: 30MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 625 mW |
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