Technische Details 2N5581 MOT
Description: TRANS NPN 50V 0.8A TO46, Power - Max: 500 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 800 mA, Supplier Device Package: TO-46 (TO-206AB), DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V, Current - Collector Cutoff (Max): 10µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Operating Temperature: -55°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-206AB, TO-46-3 Metal Can, Packaging: Bulk.
Weitere Produktangebote 2N5581
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
2N5581 | Microchip Technology |
 Description: TRANS NPN 50V 0.8A TO46Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 800 mA Supplier Device Package: TO-46 (TO-206AB) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Operating Temperature: -55°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-206AB, TO-46-3 Metal Can Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 233 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 2N5581 | Microchip Technology |
Bipolar Transistors - BJT 50V 800MA 500MW Small-Signal BJT THT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 233 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 2N5581 |
|
Hersteller: Microchip Technology
Description: TRANS NPN 50V 0.8A TO46
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Supplier Device Package: TO-46 (TO-206AB)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AB, TO-46-3 Metal Can
Packaging: Bulk
Description: TRANS NPN 50V 0.8A TO46
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Supplier Device Package: TO-46 (TO-206AB)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AB, TO-46-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 233 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2N5581 |
|
Hersteller: Microchip Technology
Bipolar Transistors - BJT 50V 800MA 500MW Small-Signal BJT THT
Bipolar Transistors - BJT 50V 800MA 500MW Small-Signal BJT THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 233 Stücke
Im Einkaufswagen
Stück im Wert von UAH