Technische Details 2N657S MOT
Description: TRANS NPN 40V TO-5AA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V, Current - Collector Cutoff (Max): 10µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-205AA, TO-5-3 Metal Can, Packaging: Bulk, Power - Max: 600 mW, Voltage - Collector Emitter Breakdown (Max): 40 V, Part Status: Active, Supplier Device Package: TO-5AA.
Weitere Produktangebote 2N657S
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
2N657S | Microchip Technology |
Description: TRANS NPN 40V TO-5AA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Packaging: Bulk Power - Max: 600 mW Voltage - Collector Emitter Breakdown (Max): 40 V Part Status: Active Supplier Device Package: TO-5AA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 2N657S | Microchip Technology | Bipolar Transistors - BJT 100V 4W .5mA NPN Short-Lead Power BJT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 2N657S |
Hersteller: Microchip Technology
Description: TRANS NPN 40V TO-5AA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Power - Max: 600 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Part Status: Active
Supplier Device Package: TO-5AA
Description: TRANS NPN 40V TO-5AA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Power - Max: 600 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Part Status: Active
Supplier Device Package: TO-5AA
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2N657S |
Hersteller: Microchip Technology
Bipolar Transistors - BJT 100V 4W .5mA NPN Short-Lead Power BJT
Bipolar Transistors - BJT 100V 4W .5mA NPN Short-Lead Power BJT
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH