2N697S
Hersteller:
CAN
auf Bestellung 1030 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details 2N697S
Description: NPN TRANSISTOR, Packaging: Bulk, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V, Supplier Device Package: TO-39, Part Status: Active, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 600 mW.
Weitere Produktangebote 2N697S
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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|---|---|---|---|---|---|
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2N697S | Microchip Technology |
Description: NPN TRANSISTOR Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-39 Part Status: Active Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 600 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 2N697S | Microchip Technology |
Bipolar Transistors - BJT Power BJT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 2N697S |
|
Hersteller: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 600 mW
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 600 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N697S |
|
Hersteller: Microchip Technology
Bipolar Transistors - BJT Power BJT
Bipolar Transistors - BJT Power BJT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH