2N7002KT Shenzhen Slkormicro Semicon Co., Ltd.
Hersteller: Shenzhen Slkormicro Semicon Co., Ltd.Description: 60V 100MA 13@4.5V,10MA 150MW 2.2
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 10V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18 pF @ 30 V
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 84+ | 0.21 EUR |
| 139+ | 0.13 EUR |
| 224+ | 0.079 EUR |
| 500+ | 0.057 EUR |
| 1000+ | 0.05 EUR |
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Technische Details 2N7002KT Shenzhen Slkormicro Semicon Co., Ltd.
Description: 60V 100MA 13@4.5V,10MA 150MW 2.2, Packaging: Tape & Reel (TR), Package / Case: SOT-523, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 10V, Power Dissipation (Max): 150mW (Ta), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: SOT-523, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 18 pF @ 30 V.
Weitere Produktangebote 2N7002KT nach Preis ab 0.079 EUR bis 0.48 EUR
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2N7002K-T | Hersteller : Rectron |
MOSFETs MOSFET,SOT-23 |
auf Bestellung 865 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2N7002K-T | Hersteller : Rectron | 2N7002K-T |
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2N7002KT | Hersteller : Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 60V 100MA 13@4.5V,10MA 150MW 2.2 Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 10V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: SOT-523 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 18 pF @ 30 V |
Produkt ist nicht verfügbar |