Technische Details 2SK1062 TOSHIBA
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 200mW; SC59, Power dissipation: 0.2W, Polarisation: unipolar, Drain current: 0.2A, Kind of channel: enhancement, Drain-source voltage: 60V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, Case: SC59, On-state resistance: 1Ω, Mounting: SMD.
Weitere Produktangebote 2SK1062
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| 2SK1062 | Toshiba |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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2SK1062(TE85L,F) | TOSHIBA |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 200mW; SC59 Power dissipation: 0.2W Polarisation: unipolar Drain current: 0.2A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SC59 On-state resistance: 1Ω Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 2SK1062(TE85L,F) |
|
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 200mW; SC59
Power dissipation: 0.2W
Polarisation: unipolar
Drain current: 0.2A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SC59
On-state resistance: 1Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 200mW; SC59
Power dissipation: 0.2W
Polarisation: unipolar
Drain current: 0.2A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SC59
On-state resistance: 1Ω
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH