FGA5065ADF onsemi / Fairchild
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.56 EUR |
| 10+ | 9.48 EUR |
| 100+ | 7.96 EUR |
| 250+ | 6.62 EUR |
| 450+ | 6.33 EUR |
| 900+ | 5.97 EUR |
| 2700+ | 5.9 EUR |
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Lieferzeit:
10-14 Tag (e)
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Technische Details FGA5065ADF onsemi / Fairchild
Description: INSULATED GATE BIPOLAR TRANSISTO, Packaging: Bulk, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 31.8 ns, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A, Supplier Device Package: TO-3PN, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 20.8ns/62.4ns, Switching Energy: 1.35mJ (on), 309µJ (off), Test Condition: 400V, 50A, 6Ohm, 15V, Gate Charge: 72.2 nC, Part Status: Active, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 268 W.
Weitere Produktangebote FGA5065ADF nach Preis ab 5.31 EUR bis 5.31 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
| FGA5065ADF | Fairchild Semiconductor |
 Description: INSULATED GATE BIPOLAR TRANSISTOPackaging: Bulk Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 31.8 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A Supplier Device Package: TO-3PN IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 20.8ns/62.4ns Switching Energy: 1.35mJ (on), 309µJ (off) Test Condition: 400V, 50A, 6Ohm, 15V Gate Charge: 72.2 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 268 W |
auf Bestellung 325 Stücke: Lieferzeit 10-14 Tag (e) |
|
| FGA5065ADF |
|
Hersteller: Fairchild Semiconductor
Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31.8 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20.8ns/62.4ns
Switching Energy: 1.35mJ (on), 309µJ (off)
Test Condition: 400V, 50A, 6Ohm, 15V
Gate Charge: 72.2 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 268 W
Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31.8 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20.8ns/62.4ns
Switching Energy: 1.35mJ (on), 309µJ (off)
Test Condition: 400V, 50A, 6Ohm, 15V
Gate Charge: 72.2 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 268 W
auf Bestellung 325 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 111+ | 5.31 EUR |