FGA5065ADF onsemi / Fairchild
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.56 EUR |
| 10+ | 9.48 EUR |
| 100+ | 7.96 EUR |
| 250+ | 6.62 EUR |
| 450+ | 6.33 EUR |
| 900+ | 5.97 EUR |
| 2700+ | 5.9 EUR |
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Technische Details FGA5065ADF onsemi / Fairchild
Description: INSULATED GATE BIPOLAR TRANSISTO, Switching Energy: 1.35mJ (on), 309µJ (off), Td (on/off) @ 25°C: 20.8ns/62.4ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-3PN, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A, Reverse Recovery Time (trr): 31.8 ns, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Bulk, Power - Max: 268 W, Current - Collector Pulsed (Icm): 150 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 100 A, Part Status: Active, Gate Charge: 72.2 nC, Test Condition: 400V, 50A, 6Ohm, 15V.
Weitere Produktangebote FGA5065ADF nach Preis ab 5.31 EUR bis 5.31 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
| FGA5065ADF | Fairchild Semiconductor |
 Description: INSULATED GATE BIPOLAR TRANSISTOSwitching Energy: 1.35mJ (on), 309µJ (off) Td (on/off) @ 25°C: 20.8ns/62.4ns IGBT Type: Trench Field Stop Supplier Device Package: TO-3PN Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A Reverse Recovery Time (trr): 31.8 ns Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Bulk Power - Max: 268 W Current - Collector Pulsed (Icm): 150 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 100 A Part Status: Active Gate Charge: 72.2 nC Test Condition: 400V, 50A, 6Ohm, 15V |
auf Bestellung 325 Stücke: Lieferzeit 10-14 Tag (e) |
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| FGA5065ADF | ON Semiconductor |
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auf Bestellung 2250 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FGA5065ADF |
|
Hersteller: Fairchild Semiconductor
Description: INSULATED GATE BIPOLAR TRANSISTO
Switching Energy: 1.35mJ (on), 309µJ (off)
Td (on/off) @ 25°C: 20.8ns/62.4ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PN
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
Reverse Recovery Time (trr): 31.8 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Bulk
Power - Max: 268 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 100 A
Part Status: Active
Gate Charge: 72.2 nC
Test Condition: 400V, 50A, 6Ohm, 15V
Description: INSULATED GATE BIPOLAR TRANSISTO
Switching Energy: 1.35mJ (on), 309µJ (off)
Td (on/off) @ 25°C: 20.8ns/62.4ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PN
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
Reverse Recovery Time (trr): 31.8 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Bulk
Power - Max: 268 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 100 A
Part Status: Active
Gate Charge: 72.2 nC
Test Condition: 400V, 50A, 6Ohm, 15V
auf Bestellung 325 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 111+ | 5.31 EUR |
| FGA5065ADF |
|
Hersteller: ON Semiconductor
auf Bestellung 2250 Stücke:
Lieferzeit 21-28 Tag (e)