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RM4N650TI

RM4N650TI Rectron USA


Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 650V 4A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V
Power Dissipation (Max): 28.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 50 V
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Technische Details RM4N650TI Rectron USA

Description: MOSFET N-CHANNEL 650V 4A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V, Power Dissipation (Max): 28.5W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-220F, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 50 V.

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RM4N650TI RM4N650TI Hersteller : Rectron rm4n650t2(hd)(ti)-1396273.pdf MOSFET TO-220F MOSFET
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