A2T21H140-24SR3 NXP USA Inc.
Hersteller: NXP USA Inc.
Description: RF MOSFET LDMOS 28V OM780-4
Current - Test: 350 mA
Voltage - Test: 28 V
Voltage - Rated: 65 V
Part Status: Obsolete
Supplier Device Package: OM780-4
Technology: LDMOS
Gain: 17.4dB
Power - Output: 169W
Configuration: Dual
Frequency: 2.11GHz ~ 2.17GHz
Current Rating (Amps): 10µA
Package / Case: OM780-4
Packaging: Tape & Reel (TR)
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Technische Details A2T21H140-24SR3 NXP USA Inc.
Description: RF MOSFET LDMOS 28V OM780-4, Current - Test: 350 mA, Voltage - Test: 28 V, Voltage - Rated: 65 V, Part Status: Obsolete, Supplier Device Package: OM780-4, Technology: LDMOS, Gain: 17.4dB, Power - Output: 169W, Configuration: Dual, Frequency: 2.11GHz ~ 2.17GHz, Current Rating (Amps): 10µA, Package / Case: OM780-4, Packaging: Tape & Reel (TR).
Weitere Produktangebote A2T21H140-24SR3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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A2T21H140-24SR3 | Hersteller : NXP Semiconductors |
RF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2170 MHz, 36 W Avg., 28 V |
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