Technische Details A2T21H360-23NR6 NXP Semiconductors
Description: RF MOSFET LDMOS 28V OM1230-42, Packaging: Tape & Reel (TR), Package / Case: OM-1230-4L2L, Current Rating (Amps): 10µA, Frequency: 2.11GHz ~ 2.2GHz, Configuration: Dual, Power - Output: 373W, Gain: 16.8dB, Technology: LDMOS, Supplier Device Package: OM-1230-4L2L, Part Status: Obsolete, Voltage - Rated: 65 V, Voltage - Test: 28 V, Current - Test: 500 mA.
Weitere Produktangebote A2T21H360-23NR6
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| A2T21H360-23NR6 | Hersteller : NXP USA Inc. |
 Description: RF MOSFET LDMOS 28V OM1230-42Packaging: Tape & Reel (TR) Package / Case: OM-1230-4L2L Current Rating (Amps): 10µA Frequency: 2.11GHz ~ 2.2GHz Configuration: Dual Power - Output: 373W Gain: 16.8dB Technology: LDMOS Supplier Device Package: OM-1230-4L2L Part Status: Obsolete Voltage - Rated: 65 V Voltage - Test: 28 V Current - Test: 500 mA |
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A2T21H360-23NR6 | Hersteller : NXP Semiconductors |
RF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2200 MHz, 63 W Avg., 28 V |
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