A3G26H200W17SR3 NXP USA Inc.
Hersteller: NXP USA Inc.
Description: RF MOSFET GAN 48V NI780
Packaging: Tape & Reel (TR)
Package / Case: NI-780S-4S2S
Frequency: 2.496GHz ~ 2.69GHz
Power - Output: 34W
Gain: 14.2dB
Technology: GaN
Supplier Device Package: NI-780S-4S2S
Voltage - Rated: 125 V
Voltage - Test: 48 V
Current - Test: 120 mA
Description: RF MOSFET GAN 48V NI780
Packaging: Tape & Reel (TR)
Package / Case: NI-780S-4S2S
Frequency: 2.496GHz ~ 2.69GHz
Power - Output: 34W
Gain: 14.2dB
Technology: GaN
Supplier Device Package: NI-780S-4S2S
Voltage - Rated: 125 V
Voltage - Test: 48 V
Current - Test: 120 mA
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Technische Details A3G26H200W17SR3 NXP USA Inc.
Description: RF MOSFET GAN 48V NI780, Packaging: Tape & Reel (TR), Package / Case: NI-780S-4S2S, Frequency: 2.496GHz ~ 2.69GHz, Power - Output: 34W, Gain: 14.2dB, Technology: GaN, Supplier Device Package: NI-780S-4S2S, Voltage - Rated: 125 V, Voltage - Test: 48 V, Current - Test: 120 mA.
Weitere Produktangebote A3G26H200W17SR3
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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A3G26H200W17SR3 | Hersteller : NXP Semiconductors | RF MOSFET Transistors Airfast RF Power GaN Transistor, 2496-2690 MHz, 34 W Avg., 48 V |
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