A3I25X050GNR1 NXP USA Inc.
Hersteller: NXP USA Inc.
Description: RF MOSFET LDMOS 28V OM400G-8
Current - Test: 130 mA
Voltage - Test: 28 V
Voltage - Rated: 65 V
Part Status: Active
Supplier Device Package: OM-400G-8
Technology: LDMOS (Dual)
Gain: 28.8dB
Power - Output: 5.6W
Configuration: 2 N-Channel
Frequency: 2.3GHz ~ 2.7GHz
Mounting Type: Surface Mount
Current Rating (Amps): 10µA
Package / Case: OM-400G-8
Packaging: Tape & Reel (TR)
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Technische Details A3I25X050GNR1 NXP USA Inc.
Description: RF MOSFET LDMOS 28V OM400G-8, Current - Test: 130 mA, Voltage - Test: 28 V, Voltage - Rated: 65 V, Part Status: Active, Supplier Device Package: OM-400G-8, Technology: LDMOS (Dual), Gain: 28.8dB, Power - Output: 5.6W, Configuration: 2 N-Channel, Frequency: 2.3GHz ~ 2.7GHz, Mounting Type: Surface Mount, Current Rating (Amps): 10µA, Package / Case: OM-400G-8, Packaging: Tape & Reel (TR).
Weitere Produktangebote A3I25X050GNR1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| A3I25X050GNR1 | Hersteller : NXP Semiconductors |
RF Amplifier Airfast RF LDMOS Integrated Power Amplifier, 2300-2700 MHz, 5.6 W Avg., 28 V |
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