AFT09MS031GNR1 NXP USA Inc.
Hersteller: NXP USA Inc.
Description: RF MOSFET LDMOS 13.6V TO270-2
Packaging: Tape & Reel (TR)
Package / Case: TO-270BA
Mounting Type: Surface Mount
Frequency: 870MHz
Power - Output: 31W
Gain: 17.2dB
Technology: LDMOS
Supplier Device Package: TO-270-2 GULL
Part Status: Active
Voltage - Rated: 40 V
Voltage - Test: 13.6 V
Current - Test: 500 mA
| Anzahl | Preis |
|---|---|
| 500+ | 29.01 EUR |
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Technische Details AFT09MS031GNR1 NXP USA Inc.
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; RF; 317W; TO270G-2; Pout: 31W; SMT, Type of transistor: N-MOSFET, Polarisation: unipolar, Kind of transistor: RF, Power dissipation: 317W, Case: TO270G-2, Kind of package: reel; tape, Frequency: 870MHz, Kind of channel: enhancement, Output power: 31W, Electrical mounting: SMT, Open-loop gain: 17.2dB, Efficiency: 71%.
Weitere Produktangebote AFT09MS031GNR1 nach Preis ab 29.76 EUR bis 43.58 EUR
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AFT09MS031GNR1 | Hersteller : NXP USA Inc. |
Description: RF MOSFET LDMOS 13.6V TO270-2 Packaging: Cut Tape (CT) Package / Case: TO-270BA Mounting Type: Surface Mount Frequency: 870MHz Power - Output: 31W Gain: 17.2dB Technology: LDMOS Supplier Device Package: TO-270-2 GULL Part Status: Active Voltage - Rated: 40 V Voltage - Test: 13.6 V Current - Test: 500 mA |
auf Bestellung 1167 Stücke: Lieferzeit 10-14 Tag (e) |
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AFT09MS031GNR1 | Hersteller : NXP |
Description: NXP - AFT09MS031GNR1 - RF FET, 40V, 150DEG C, 317W tariffCode: 85412900 MSL: MSL 3 - 168 hours productTraceability: No rohsCompliant: YES Anzahl der Pins: 2Pin(s) euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES directShipCharge: 25 usEccn: EAR99 |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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AFT09MS031GNR1 | Hersteller : NXP Semiconductors |
Trans RF MOSFET N-CH 40V 3-Pin TO-270 GULL T/R |
Produkt ist nicht verfügbar |
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AFT09MS031GNR1 | Hersteller : NXP Semiconductors |
RF MOSFET Transistors MV9 800MHZ13.6V |
Produkt ist nicht verfügbar |
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| AFT09MS031GNR1 | Hersteller : NXP |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; RF; 317W; TO270G-2; Pout: 31W; SMT Type of transistor: N-MOSFET Polarisation: unipolar Kind of transistor: RF Power dissipation: 317W Case: TO270G-2 Kind of package: reel; tape Frequency: 870MHz Kind of channel: enhancement Output power: 31W Electrical mounting: SMT Open-loop gain: 17.2dB Efficiency: 71% |
Produkt ist nicht verfügbar |