Technische Details AFT18H357-24NR6 NXP Semiconductors
Description: RF MOSFET LDMOS 28V OM1230-42, Packaging: Tape & Reel (TR), Package / Case: OM-1230-4L2L, Mounting Type: Chassis Mount, Frequency: 1.81GHz, Configuration: Dual, Power - Output: 63W, Gain: 17.5dB, Technology: LDMOS, Supplier Device Package: OM-1230-4L2L, Voltage - Rated: 65 V, Voltage - Test: 28 V, Current - Test: 800 mA.
Weitere Produktangebote AFT18H357-24NR6
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| AFT18H357-24NR6 | Hersteller : NXP USA Inc. |
 Description: RF MOSFET LDMOS 28V OM1230-42Packaging: Tape & Reel (TR) Package / Case: OM-1230-4L2L Mounting Type: Chassis Mount Frequency: 1.81GHz Configuration: Dual Power - Output: 63W Gain: 17.5dB Technology: LDMOS Supplier Device Package: OM-1230-4L2L Voltage - Rated: 65 V Voltage - Test: 28 V Current - Test: 800 mA |
Produkt ist nicht verfügbar |
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| AFT18H357-24NR6 | Hersteller : NXP / Freescale |
RF MOSFET Transistors 1805-1995 MHz, 63 W AVG., 28 V |
Produkt ist nicht verfügbar |