AO4614B
Produktcode: 55926
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Transistoren > Transistoren IGBT, Leistungsmodule
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Weitere Produktangebote AO4614B nach Preis ab 0.37 EUR bis 1.53 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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AO4614B | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 40V 6A/5A 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A, 5A Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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AO4614B | ALPHA&OMEGA |
Transistor N/P-Channel MOSFET; 40V; 20V; 45mOhm/65mOhm; 6A/5A; 2W; -55°C ~ 150°C; AO4614B TAO4614bAnzahl je Verpackung: 50 Stücke |
auf Bestellung 150 Stücke: Lieferzeit 7-14 Tag (e) |
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AO4614B | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V Kind of transistor: complementary pair Polarisation: unipolar Kind of channel: enhancement Mounting: SMD Type of transistor: N/P-MOSFET Case: SO8 Gate charge: 17/8.9nC On-state resistance: 45/30mΩ Power dissipation: 1.28W Drain current: 5/-4A Gate-source voltage: ±20V Drain-source voltage: 40/-40V |
auf Bestellung 83 Stücke: Lieferzeit 14-21 Tag (e) |
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AO4614B | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 40V 6A/5A 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A, 5A Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 3025 Stücke: Lieferzeit 10-14 Tag (e) |
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| AO4614B |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 40V 6A/5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A, 5A
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET N/P-CH 40V 6A/5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A, 5A
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.37 EUR |
| AO4614B |
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Hersteller: ALPHA&OMEGA
Transistor N/P-Channel MOSFET; 40V; 20V; 45mOhm/65mOhm; 6A/5A; 2W; -55°C ~ 150°C; AO4614B TAO4614b
Anzahl je Verpackung: 50 Stücke
Transistor N/P-Channel MOSFET; 40V; 20V; 45mOhm/65mOhm; 6A/5A; 2W; -55°C ~ 150°C; AO4614B TAO4614b
Anzahl je Verpackung: 50 Stücke
auf Bestellung 150 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 50+ | 0.62 EUR |
| AO4614B |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Kind of transistor: complementary pair
Polarisation: unipolar
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Case: SO8
Gate charge: 17/8.9nC
On-state resistance: 45/30mΩ
Power dissipation: 1.28W
Drain current: 5/-4A
Gate-source voltage: ±20V
Drain-source voltage: 40/-40V
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Kind of transistor: complementary pair
Polarisation: unipolar
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Case: SO8
Gate charge: 17/8.9nC
On-state resistance: 45/30mΩ
Power dissipation: 1.28W
Drain current: 5/-4A
Gate-source voltage: ±20V
Drain-source voltage: 40/-40V
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 83+ | 0.86 EUR |
| AO4614B |
![]() |
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 40V 6A/5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A, 5A
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET N/P-CH 40V 6A/5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A, 5A
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 3025 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 12+ | 1.53 EUR |
| 19+ | 0.95 EUR |
| 100+ | 0.62 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.43 EUR |



