APT1001RBN
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Technische Details APT1001RBN
Description: MOSFET N-CH 1000V 11A TO247AD, Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Drain to Source Voltage (Vdss): 1000 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-247AD, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 310W (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 5.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote APT1001RBN
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| APT1001RBN | Microchip Technology |
Description: MOSFET N-CH 1000V 11A TO247AD Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Drain to Source Voltage (Vdss): 1000 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-247AD Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 5.5A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
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Im Einkaufswagen Stück im Wert von UAH |
| APT1001RBN |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 11A TO247AD
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247AD
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 310W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 1000V 11A TO247AD
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247AD
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 310W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH