Weitere Produktangebote APT12031JFLL
| Foto | Bezeichnung | Hersteller | Beschreibung |
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APT12031JFLL | Hersteller : Microchip Technology |
 Trans MOSFET N-CH 1.2KV 30A 4-Pin SOT-227 Tube |
Produkt ist nicht verfügbar |
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APT12031JFLL | Hersteller : Microchip Technology |
Trans MOSFET N-CH 1.2KV 30A 4-Pin SOT-227 Tube |
Produkt ist nicht verfügbar |
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APT12031JFLL | Hersteller : Microchip Technology |
Trans MOSFET N-CH 1.2KV 30A 4-Pin SOT-227 Tube |
Produkt ist nicht verfügbar |
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| APT12031JFLL | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 30A; ISOTOP; screw; Idm: 120A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 30A Case: ISOTOP Electrical mounting: screw On-state resistance: 0.33Ω Pulsed drain current: 120A Power dissipation: 690W Technology: POWER MOS 7® Gate-source voltage: ±30V Kind of package: tube Mechanical mounting: screw Kind of channel: enhancement Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT12031JFLL | Hersteller : Microchip Technology |
Description: MOSFET N-CH 1200V 30A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 15A, 10V Power Dissipation (Max): 690AW (Tc) Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: ISOTOP® Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 365 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9480 pF @ 25 V |
Produkt ist nicht verfügbar |
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APT12031JFLL | Hersteller : Microchip Technology |
MOSFET Modules FREDFET MOS7 1200 V 31 Ohm SOT-227 |
Produkt ist nicht verfügbar |
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| APT12031JFLL | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 30A; ISOTOP; screw; Idm: 120A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 30A Case: ISOTOP Electrical mounting: screw On-state resistance: 0.33Ω Pulsed drain current: 120A Power dissipation: 690W Technology: POWER MOS 7® Gate-source voltage: ±30V Kind of package: tube Mechanical mounting: screw Kind of channel: enhancement Polarisation: unipolar |
Produkt ist nicht verfügbar |