APT15GP60BDLG Microsemi Corporation
Hersteller: Microsemi Corporation
Description: IGBT 600V 56A 250W TO247
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 250 W
Current - Collector Pulsed (Icm): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 56 A
Part Status: Active
Gate Charge: 55 nC
Test Condition: 400V, 15A, 5Ohm, 15V
Switching Energy: 130µJ (on), 121µJ (off)
Td (on/off) @ 25°C: 8ns/29ns
IGBT Type: PT
Supplier Device Package: TO-247
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Technische Details APT15GP60BDLG Microsemi Corporation
Description: IGBT 600V 56A 250W TO247, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Power - Max: 250 W, Current - Collector Pulsed (Icm): 65 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 56 A, Part Status: Active, Gate Charge: 55 nC, Test Condition: 400V, 15A, 5Ohm, 15V, Switching Energy: 130µJ (on), 121µJ (off), Td (on/off) @ 25°C: 8ns/29ns, IGBT Type: PT, Supplier Device Package: TO-247.
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Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| APT15GP60BDLG | Microchip / Microsemi |
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| APT15GP60BDLG |
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Hersteller: Microchip / Microsemi
IGBT Transistors Insulated Gate Bipolar Transistor - Resonant Mode - Combi
IGBT Transistors Insulated Gate Bipolar Transistor - Resonant Mode - Combi
Produkt ist nicht verfügbar
Mindestbestellmenge: 69 Stücke
Im Einkaufswagen
Stück im Wert von UAH

