Weitere Produktangebote APT15GP60BG
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APT15GP60BG | Hersteller : MICROCHIP (MICROSEMI) |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; PT; 600V; 27A; 250W; TO247-3 Power dissipation: 250W Gate charge: 55nC Technology: POWER MOS 7®; PT Pulsed collector current: 65A Type of transistor: IGBT Turn-on time: 20ns Kind of package: tube Case: TO247-3 Turn-off time: 157ns Gate-emitter voltage: ±20V Collector current: 27A Mounting: THT Collector-emitter voltage: 600V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT15GP60BG | Hersteller : Microchip Technology |
Description: IGBT 600V 56A 250W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A Supplier Device Package: TO-247 [B] IGBT Type: PT Td (on/off) @ 25°C: 8ns/29ns Switching Energy: 130µJ (on), 121µJ (off) Test Condition: 400V, 15A, 5Ohm, 15V Gate Charge: 55 nC Part Status: Active Current - Collector (Ic) (Max): 56 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 65 A Power - Max: 250 W |
Produkt ist nicht verfügbar |
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| APT15GP60BG | Hersteller : Microchip Technology |
IGBT Transistors IGBT PT MOS 7 Single 600 V 15 A TO-247 |
Produkt ist nicht verfügbar |
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APT15GP60BG | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 600V; 27A; 250W; TO247-3 Power dissipation: 250W Gate charge: 55nC Technology: POWER MOS 7®; PT Pulsed collector current: 65A Type of transistor: IGBT Turn-on time: 20ns Kind of package: tube Case: TO247-3 Turn-off time: 157ns Gate-emitter voltage: ±20V Collector current: 27A Mounting: THT Collector-emitter voltage: 600V |
Produkt ist nicht verfügbar |