APT30GP60B2DLG MICROSEMI
Hersteller: MICROSEMI
T-MAX/INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI APT30GP60
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Technische Details APT30GP60B2DLG MICROSEMI
Description: IGBT 600V 100A 463W TMAX, Power - Max: 463 W, Current - Collector Pulsed (Icm): 120 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 100 A, Part Status: Active, Gate Charge: 90 nC, Test Condition: 400V, 30A, 5Ohm, 15V, Switching Energy: 260µJ (on), 250µJ (off), Td (on/off) @ 25°C: 13ns/55ns, IGBT Type: PT, Supplier Device Package: T-MAX™, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote APT30GP60B2DLG
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APT30GP60B2DLG | Hersteller : Microsemi Corporation |
Description: IGBT 600V 100A 463W TMAX Power - Max: 463 W Current - Collector Pulsed (Icm): 120 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 100 A Part Status: Active Gate Charge: 90 nC Test Condition: 400V, 30A, 5Ohm, 15V Switching Energy: 260µJ (on), 250µJ (off) Td (on/off) @ 25°C: 13ns/55ns IGBT Type: PT Supplier Device Package: T-MAX™ Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
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| APT30GP60B2DLG | Hersteller : Microchip / Microsemi |
IGBT Transistors Insulated Gate Bipolar Transistor - Resonant Mode - Combi |
Produkt ist nicht verfügbar |