APT30GP60B2DLG MICROSEMI
Hersteller: MICROSEMI
T-MAX/INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI APT30GP60
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details APT30GP60B2DLG MICROSEMI
Description: IGBT 600V 100A 463W TMAX, Power - Max: 463 W, Current - Collector Pulsed (Icm): 120 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 100 A, Part Status: Active, Gate Charge: 90 nC, Test Condition: 400V, 30A, 5Ohm, 15V, Switching Energy: 260µJ (on), 250µJ (off), Td (on/off) @ 25°C: 13ns/55ns, IGBT Type: PT, Supplier Device Package: T-MAX™, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote APT30GP60B2DLG
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
APT30GP60B2DLG | Microsemi Corporation |
Description: IGBT 600V 100A 463W TMAX Power - Max: 463 W Current - Collector Pulsed (Icm): 120 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 100 A Part Status: Active Gate Charge: 90 nC Test Condition: 400V, 30A, 5Ohm, 15V Switching Energy: 260µJ (on), 250µJ (off) Td (on/off) @ 25°C: 13ns/55ns IGBT Type: PT Supplier Device Package: T-MAX™ Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| APT30GP60B2DLG | Microchip / Microsemi |
IGBT Transistors Insulated Gate Bipolar Transistor - Resonant Mode - Combi |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 56 Stücke Im Einkaufswagen Stück im Wert von UAH |
| APT30GP60B2DLG |
|
Hersteller: Microsemi Corporation
Description: IGBT 600V 100A 463W TMAX
Power - Max: 463 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
Part Status: Active
Gate Charge: 90 nC
Test Condition: 400V, 30A, 5Ohm, 15V
Switching Energy: 260µJ (on), 250µJ (off)
Td (on/off) @ 25°C: 13ns/55ns
IGBT Type: PT
Supplier Device Package: T-MAX™
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT 600V 100A 463W TMAX
Power - Max: 463 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
Part Status: Active
Gate Charge: 90 nC
Test Condition: 400V, 30A, 5Ohm, 15V
Switching Energy: 260µJ (on), 250µJ (off)
Td (on/off) @ 25°C: 13ns/55ns
IGBT Type: PT
Supplier Device Package: T-MAX™
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APT30GP60B2DLG |
|
Hersteller: Microchip / Microsemi
IGBT Transistors Insulated Gate Bipolar Transistor - Resonant Mode - Combi
IGBT Transistors Insulated Gate Bipolar Transistor - Resonant Mode - Combi
Produkt ist nicht verfügbar
Mindestbestellmenge: 56 Stücke
Im Einkaufswagen
Stück im Wert von UAH