APT30GS60KRG Microsemi Corporation
Hersteller: Microsemi Corporation
Description: IGBT 600V 54A 250W TO220
Gate Charge: 145 nC
Test Condition: 400V, 30A, 9.1Ohm, 15V
Switching Energy: 570µJ (off)
Td (on/off) @ 25°C: 16ns/360ns
IGBT Type: NPT
Supplier Device Package: TO-220
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 250 W
Current - Collector Pulsed (Icm): 113 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 54 A
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Technische Details APT30GS60KRG Microsemi Corporation
Description: IGBT 600V 54A 250W TO220, Gate Charge: 145 nC, Test Condition: 400V, 30A, 9.1Ohm, 15V, Switching Energy: 570µJ (off), Td (on/off) @ 25°C: 16ns/360ns, IGBT Type: NPT, Supplier Device Package: TO-220, Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Power - Max: 250 W, Current - Collector Pulsed (Icm): 113 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 54 A.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| APT30GS60KRG | Hersteller : Microsemi |
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