APT33N90JCCU2 Microsemi Corporation



Hersteller: Microsemi Corporation
Description: MOSFET N-CH 900V 33A SOT227
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SOT-227
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Power Dissipation (Max): 290W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar

Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details APT33N90JCCU2 Microsemi Corporation

Description: MOSFET N-CH 900V 33A SOT227, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: SOT-227, Vgs(th) (Max) @ Id: 3.5V @ 3mA, Power Dissipation (Max): 290W (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V, Drain to Source Voltage (Vdss): 900 V, Vgs (Max): ±20V.

Weitere Produktangebote APT33N90JCCU2

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
APT33N90JCCU2 Microsemi Discrete Semiconductor Modules Power Module - SiC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
APT33N90JCCU2
Hersteller: Microsemi
Discrete Semiconductor Modules Power Module - SiC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH