Technische Details APT36N90BC3G MICROSEMI
Description: MOSFET N-CH 900V 36A TO247, Input Capacitance (Ciss) (Max) @ Vds: 7463 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 252 nC @ 10 V, Drain to Source Voltage (Vdss): 900 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-247 [B], Vgs(th) (Max) @ Id: 3.5V @ 2.9mA, Power Dissipation (Max): 390W (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 18A, 10V, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote APT36N90BC3G
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APT36N90BC3G | Hersteller : Microsemi Corporation |
Description: MOSFET N-CH 900V 36A TO247 Input Capacitance (Ciss) (Max) @ Vds: 7463 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 252 nC @ 10 V Drain to Source Voltage (Vdss): 900 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-247 [B] Vgs(th) (Max) @ Id: 3.5V @ 2.9mA Power Dissipation (Max): 390W (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
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APT36N90BC3G | Hersteller : Microchip / Microsemi | MOSFET Power MOSFET - CoolMOS |
Produkt ist nicht verfügbar |