APT40SM120J Microchip / Microsemi


APT40SM120J.pdf
Hersteller: Microchip / Microsemi
Discrete Semiconductor Modules Power MOSFET - SiC
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Technische Details APT40SM120J Microchip / Microsemi

Description: MOSFET N-CH 1200V 32A SOT227, Package / Case: SOT-227-4, miniBLOC, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 2560 pF @ 1000 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +25V, -10V, Drive Voltage (Max Rds On, Min Rds On): 20V, Supplier Device Package: SOT-227, Vgs(th) (Max) @ Id: 3V @ 1mA (Typ), Power Dissipation (Max): 165W (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Chassis Mount.

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APT40SM120J APT40SM120J Microsemi Corporation APT40SM120J.pdf Description: MOSFET N-CH 1200V 32A SOT227
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 2560 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Supplier Device Package: SOT-227
Vgs(th) (Max) @ Id: 3V @ 1mA (Typ)
Power Dissipation (Max): 165W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Produkt ist nicht verfügbar
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
APT40SM120J APT40SM120J.pdf
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 1200V 32A SOT227
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 2560 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Supplier Device Package: SOT-227
Vgs(th) (Max) @ Id: 3V @ 1mA (Typ)
Power Dissipation (Max): 165W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Produkt ist nicht verfügbar
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH