APT53N60SC6 Microsemi Corporation
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 600V 53A D3PAK
Packaging: Bulk
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 25.8A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.72mA
Supplier Device Package: D3Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4020 pF @ 25 V
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Technische Details APT53N60SC6 Microsemi Corporation
Description: MOSFET N-CH 600V 53A D3PAK, Packaging: Bulk, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 53A (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 25.8A, 10V, Power Dissipation (Max): 417W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 1.72mA, Supplier Device Package: D3Pak, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4020 pF @ 25 V.
Weitere Produktangebote APT53N60SC6
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
APT53N60SC6 | Microchip / Microsemi |
 MOSFET Power MOSFET - CoolMOS |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 58 Stücke Im Einkaufswagen Stück im Wert von UAH |
| APT53N60SC6 | MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 600V; 53A; 417W; D3PAK,TO268 Type of transistor: N-MOSFET Drain-source voltage: 600V Drain current: 53A Power dissipation: 417W Case: D3PAK; TO268 Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: SMD Kind of package: tube Kind of channel: enhancement Gate charge: 154nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 27 Stücke Im Einkaufswagen Stück im Wert von UAH |
| APT53N60SC6 |
|
Hersteller: Microchip / Microsemi
MOSFET Power MOSFET - CoolMOS
MOSFET Power MOSFET - CoolMOS
Produkt ist nicht verfügbar
Mindestbestellmenge: 58 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APT53N60SC6 |
Hersteller: MICROCHIP TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 53A; 417W; D3PAK,TO268
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 417W
Case: D3PAK; TO268
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 154nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 53A; 417W; D3PAK,TO268
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 417W
Case: D3PAK; TO268
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 154nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 27 Stücke
Im Einkaufswagen
Stück im Wert von UAH