APT53N60SC6 Microsemi Corporation

Description: MOSFET N-CH 600V 53A D3PAK, Input Capacitance (Ciss) (Max) @ Vds: 4020 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: D3Pak, Vgs(th) (Max) @ Id: 3.5V @ 1.72mA, Power Dissipation (Max): 417W (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 25.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 53A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Packaging: Bulk.