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APT68GA60B
Produktcode: 133965
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Weitere Produktangebote APT68GA60B nach Preis ab 16.95 EUR bis 16.95 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
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APT68GA60B | Microchip Technology |
Description: IGBT 600V 121A 520W TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A Supplier Device Package: TO-247 [B] IGBT Type: PT Td (on/off) @ 25°C: 21ns/133ns Switching Energy: 715µJ (on), 607µJ (off) Test Condition: 400V, 40A, 4.7Ohm, 15V Gate Charge: 298 nC Part Status: Active Current - Collector (Ic) (Max): 121 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 202 A Power - Max: 520 W |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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| APT68GA60B | Microsemi |
IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 8 - Single |
auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| APT68GA60B |
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Hersteller: Microchip Technology
Description: IGBT 600V 121A 520W TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/133ns
Switching Energy: 715µJ (on), 607µJ (off)
Test Condition: 400V, 40A, 4.7Ohm, 15V
Gate Charge: 298 nC
Part Status: Active
Current - Collector (Ic) (Max): 121 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 202 A
Power - Max: 520 W
Description: IGBT 600V 121A 520W TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/133ns
Switching Energy: 715µJ (on), 607µJ (off)
Test Condition: 400V, 40A, 4.7Ohm, 15V
Gate Charge: 298 nC
Part Status: Active
Current - Collector (Ic) (Max): 121 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 202 A
Power - Max: 520 W
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 16.95 EUR |
| APT68GA60B |
|
Hersteller: Microsemi
IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 8 - Single
IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 8 - Single
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)