APT75GP120J Microchip Technology
auf Bestellung 20 Stücke:
Lieferzeit 319-333 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 120.9 EUR |
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Technische Details APT75GP120J Microchip Technology
Description: IGBT MOD 1200V 128A 543W ISOTOP, Packaging: Tube, Package / Case: ISOTOP, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -55°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A, NTC Thermistor: No, Supplier Device Package: ISOTOP®, IGBT Type: PT, Current - Collector (Ic) (Max): 128 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 543 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 7.04 nF @ 25 V.
Weitere Produktangebote APT75GP120J
| Foto | Bezeichnung | Hersteller | Beschreibung |
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APT75GP120J Produktcode: 101781 |
 Transistoren > Transistoren IGBT, LeistungsmoduleZCODE: 8541290010 |
Produkt ist nicht verfügbar
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| APT75GP120J | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 57A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 57A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 300A Technology: POWER MOS 7®; PT Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT75GP120J | Hersteller : MICROSEMI |
ISTOP 4/128 A, 1200 V, N-CHANNEL IGBT APT75GP120 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT75GP120J | Hersteller : Microchip Technology |
Description: IGBT MOD 1200V 128A 543W ISOTOP Packaging: Tube Package / Case: ISOTOP Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A NTC Thermistor: No Supplier Device Package: ISOTOP® IGBT Type: PT Current - Collector (Ic) (Max): 128 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 543 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 7.04 nF @ 25 V |
Produkt ist nicht verfügbar |
|
| APT75GP120J | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 57A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 57A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 300A Technology: POWER MOS 7®; PT Mechanical mounting: screw |
Produkt ist nicht verfügbar |