APT85GR120L MICROSEMI
auf Bestellung 25 Stücke:
Lieferzeit 7-21 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details APT85GR120L MICROSEMI
Description: IGBT NPT 1200V 170A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 85A, Supplier Device Package: TO-264, IGBT Type: NPT, Td (on/off) @ 25°C: 43ns/300ns, Switching Energy: 6mJ (on), 3.8mJ (off), Test Condition: 600V, 85A, 4.3Ohm, 15V, Gate Charge: 660 nC, Current - Collector (Ic) (Max): 170 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 340 A, Power - Max: 962 W.
Weitere Produktangebote APT85GR120L
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
APT85GR120L Produktcode: 172611
zu Favoriten hinzufügen
Lieblingsprodukt
|
 Transistoren > Transistoren IGBT, Leistungsmodule |
Produkt ist nicht verfügbar
|
|||
 |
APT85GR120L | Hersteller : Microchip Technology |
Trans IGBT Chip N-CH 1200V 170A 962000mW 3-Pin(3+Tab) TO-264 Tube |
Produkt ist nicht verfügbar |
|
 |
APT85GR120L | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 85A; 962W; TO264 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 85A Pulsed collector current: 340A Turn-on time: 113ns Turn-off time: 445ns Type of transistor: IGBT Power dissipation: 962W Kind of package: tube Gate charge: 0.49µC Technology: NPT; POWER MOS 8® Mounting: THT Case: TO264 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
 |
APT85GR120L | Hersteller : Microchip Technology |
Description: IGBT NPT 1200V 170A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 85A Supplier Device Package: TO-264 IGBT Type: NPT Td (on/off) @ 25°C: 43ns/300ns Switching Energy: 6mJ (on), 3.8mJ (off) Test Condition: 600V, 85A, 4.3Ohm, 15V Gate Charge: 660 nC Current - Collector (Ic) (Max): 170 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 340 A Power - Max: 962 W |
Produkt ist nicht verfügbar |
|
| APT85GR120L | Hersteller : Microchip Technology |
IGBTs IGBT MOS 8 1200 V 85 A TO-264 |
Produkt ist nicht verfügbar |
||
|
|
APT85GR120L | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 85A; 962W; TO264 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 85A Pulsed collector current: 340A Turn-on time: 113ns Turn-off time: 445ns Type of transistor: IGBT Power dissipation: 962W Kind of package: tube Gate charge: 0.49µC Technology: NPT; POWER MOS 8® Mounting: THT Case: TO264 |
Produkt ist nicht verfügbar |