APT97N65LC6 Microsemi Corporation



Hersteller: Microsemi Corporation
Description: MOSFET N-CH 650V 97A TO264
Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 3.5V @ 2.96mA
Power Dissipation (Max): 862W (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 48.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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Technische Details APT97N65LC6 Microsemi Corporation

Description: MOSFET N-CH 650V 97A TO264, Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-264 [L], Vgs(th) (Max) @ Id: 3.5V @ 2.96mA, Power Dissipation (Max): 862W (Tc), Rds On (Max) @ Id, Vgs: 41mOhm @ 48.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 97A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-264-3, TO-264AA, Packaging: Tube.

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APT97N65LC6 APT97N65LC6 Hersteller : Microchip Technology APT97N65B2_LC6_A-1592493.pdf MOSFET FG, MOSFET, 650V, 97A, TO-264
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