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APTGT75A170D1G


Hersteller: APT
75A/1700V/IGBT/2U
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Technische Details APTGT75A170D1G APT

Description: IGBT MODULE 1700V 120A 520W D1, Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V, Current - Collector Cutoff (Max): 5 mA, Power - Max: 520 W, Voltage - Collector Emitter Breakdown (Max): 1700 V, Current - Collector (Ic) (Max): 120 A, IGBT Type: Trench Field Stop, Supplier Device Package: D1, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 75A, Configuration: Half Bridge, Input: Standard, Mounting Type: Chassis Mount, Package / Case: D1, Packaging: Bulk.

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APTGT75A170D1G Microsemi Corporation Description: IGBT MODULE 1700V 120A 520W D1
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 520 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 120 A
IGBT Type: Trench Field Stop
Supplier Device Package: D1
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 75A
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: D1
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
APTGT75A170D1G
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1700V 120A 520W D1
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 520 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 120 A
IGBT Type: Trench Field Stop
Supplier Device Package: D1
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 75A
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: D1
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH