Technische Details APTM100A13DG Microsemi Corporation
Category: Transistor modules, Description: Module; diode/transistor; 1kV; 49A; SP6C; FASTON connectors,screw, Type of semiconductor module: MOSFET transistor, Semiconductor structure: diode/transistor, Drain-source voltage: 1kV, Drain current: 49A, Case: SP6C, Electrical mounting: FASTON connectors; screw, On-state resistance: 156mΩ, Pulsed drain current: 240A, Power dissipation: 1.25kW, Technology: POWER MOS 7®, Gate-source voltage: ±30V, Mechanical mounting: screw, Topology: MOSFET half-bridge + serial diodes.
Weitere Produktangebote APTM100A13DG
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| APTM100A13DG | Microchip Technology |
 MOSFET Modules PM-MOSFET-7-SP6C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| APTM100A13DG | MICROCHIP TECHNOLOGY |
Category: Transistor modules Description: Module; diode/transistor; 1kV; 49A; SP6C; FASTON connectors,screw Type of semiconductor module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 1kV Drain current: 49A Case: SP6C Electrical mounting: FASTON connectors; screw On-state resistance: 156mΩ Pulsed drain current: 240A Power dissipation: 1.25kW Technology: POWER MOS 7® Gate-source voltage: ±30V Mechanical mounting: screw Topology: MOSFET half-bridge + serial diodes |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
| APTM100A13DG |
|
Hersteller: Microchip Technology
MOSFET Modules PM-MOSFET-7-SP6C
MOSFET Modules PM-MOSFET-7-SP6C
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APTM100A13DG |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules
Description: Module; diode/transistor; 1kV; 49A; SP6C; FASTON connectors,screw
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 1kV
Drain current: 49A
Case: SP6C
Electrical mounting: FASTON connectors; screw
On-state resistance: 156mΩ
Pulsed drain current: 240A
Power dissipation: 1.25kW
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
Topology: MOSFET half-bridge + serial diodes
Category: Transistor modules
Description: Module; diode/transistor; 1kV; 49A; SP6C; FASTON connectors,screw
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 1kV
Drain current: 49A
Case: SP6C
Electrical mounting: FASTON connectors; screw
On-state resistance: 156mΩ
Pulsed drain current: 240A
Power dissipation: 1.25kW
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
Topology: MOSFET half-bridge + serial diodes
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen
Stück im Wert von UAH