APTM100A13DG Microchip Technology
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Technische Details APTM100A13DG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; diode/transistor; 1kV; 49A; SP6C; FASTON connectors,screw, Drain-source voltage: 1kV, Drain current: 49A, Pulsed drain current: 240A, Power dissipation: 1.25kW, Case: SP6C, Gate-source voltage: ±30V, On-state resistance: 156mΩ, Type of semiconductor module: MOSFET transistor, Technology: POWER MOS 7®, Electrical mounting: FASTON connectors; screw, Semiconductor structure: diode/transistor, Mechanical mounting: screw, Topology: MOSFET half-bridge + serial diodes.
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| APTM100A13DG | Hersteller : Microsemi Corporation |
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| APTM100A13DG | Hersteller : Microchip Technology |
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| APTM100A13DG | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 49A; SP6C; FASTON connectors,screw Drain-source voltage: 1kV Drain current: 49A Pulsed drain current: 240A Power dissipation: 1.25kW Case: SP6C Gate-source voltage: ±30V On-state resistance: 156mΩ Type of semiconductor module: MOSFET transistor Technology: POWER MOS 7® Electrical mounting: FASTON connectors; screw Semiconductor structure: diode/transistor Mechanical mounting: screw Topology: MOSFET half-bridge + serial diodes |
Produkt ist nicht verfügbar |