
APTM60A11FT1G Microchip Technology
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Technische Details APTM60A11FT1G Microchip Technology
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 600V; 30A; SP1; Press-in PCB; 390W, Type of module: MOSFET transistor, Semiconductor structure: transistor/transistor, Drain-source voltage: 600V, Drain current: 30A, Case: SP1, Topology: MOSFET half-bridge; NTC thermistor, Electrical mounting: Press-in PCB, On-state resistance: 0.11Ω, Pulsed drain current: 245A, Power dissipation: 390W, Technology: FREDFET; POWER MOS 8®, Gate-source voltage: ±30V, Mechanical mounting: screw, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTM60A11FT1G
Foto | Bezeichnung | Hersteller | Beschreibung |
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APTM60A11FT1G | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Module; transistor/transistor; 600V; 30A; SP1; Press-in PCB; 390W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 600V Drain current: 30A Case: SP1 Topology: MOSFET half-bridge; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 0.11Ω Pulsed drain current: 245A Power dissipation: 390W Technology: FREDFET; POWER MOS 8® Gate-source voltage: ±30V Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTM60A11FT1G | Hersteller : Microsemi Corporation |
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Produkt ist nicht verfügbar |
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APTM60A11FT1G | Hersteller : Microchip Technology |
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Produkt ist nicht verfügbar |
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APTM60A11FT1G | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Module; transistor/transistor; 600V; 30A; SP1; Press-in PCB; 390W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 600V Drain current: 30A Case: SP1 Topology: MOSFET half-bridge; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 0.11Ω Pulsed drain current: 245A Power dissipation: 390W Technology: FREDFET; POWER MOS 8® Gate-source voltage: ±30V Mechanical mounting: screw |
Produkt ist nicht verfügbar |