
APTM60A11FT1G Microchip Technology
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details APTM60A11FT1G Microchip Technology
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 600V; 30A; SP1; Press-in PCB; 390W, Drain-source voltage: 600V, Drain current: 30A, Power dissipation: 390W, Case: SP1, On-state resistance: 0.11Ω, Type of semiconductor module: MOSFET transistor, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Technology: FREDFET; POWER MOS 8®, Gate-source voltage: ±30V, Topology: MOSFET half-bridge; NTC thermistor, Pulsed drain current: 245A, Semiconductor structure: transistor/transistor, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTM60A11FT1G
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
---|---|---|---|---|---|
APTM60A11FT1G | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Module; transistor/transistor; 600V; 30A; SP1; Press-in PCB; 390W Drain-source voltage: 600V Drain current: 30A Power dissipation: 390W Case: SP1 On-state resistance: 0.11Ω Type of semiconductor module: MOSFET transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: FREDFET; POWER MOS 8® Gate-source voltage: ±30V Topology: MOSFET half-bridge; NTC thermistor Pulsed drain current: 245A Semiconductor structure: transistor/transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
APTM60A11FT1G | Hersteller : Microsemi Corporation |
![]() |
Produkt ist nicht verfügbar |
||
APTM60A11FT1G | Hersteller : Microchip Technology |
![]() |
Produkt ist nicht verfügbar |
||
APTM60A11FT1G | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Module; transistor/transistor; 600V; 30A; SP1; Press-in PCB; 390W Drain-source voltage: 600V Drain current: 30A Power dissipation: 390W Case: SP1 On-state resistance: 0.11Ω Type of semiconductor module: MOSFET transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: FREDFET; POWER MOS 8® Gate-source voltage: ±30V Topology: MOSFET half-bridge; NTC thermistor Pulsed drain current: 245A Semiconductor structure: transistor/transistor |
Produkt ist nicht verfügbar |