Technische Details AT-41435G Broadcom
Description: RF TRANS NPN 12V 8GHZ 35 MICRO X, Supplier Device Package: 35 micro-X, Noise Figure (dB Typ @ f): 1.3dB ~ 3dB @ 1GHz ~ 4GHz, Frequency - Transition: 8GHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 8V, Voltage - Collector Emitter Breakdown (Max): 12V, Current - Collector (Ic) (Max): 60mA, Power - Max: 500mW, Gain: 10dB ~ 18.5dB, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: 4-SMD (35 micro-X), Packaging: Bulk.
Weitere Produktangebote AT-41435G
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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AT-41435G | Broadcom Limited |
 Description: RF TRANS NPN 12V 8GHZ 35 MICRO XSupplier Device Package: 35 micro-X Noise Figure (dB Typ @ f): 1.3dB ~ 3dB @ 1GHz ~ 4GHz Frequency - Transition: 8GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 8V Voltage - Collector Emitter Breakdown (Max): 12V Current - Collector (Ic) (Max): 60mA Power - Max: 500mW Gain: 10dB ~ 18.5dB Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 4-SMD (35 micro-X) Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
AT-41435G | Broadcom / Avago |
RF Bipolar Transistors Transistor Si |
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Im Einkaufswagen Stück im Wert von UAH |
| AT-41435G |
|
Hersteller: Broadcom Limited
Description: RF TRANS NPN 12V 8GHZ 35 MICRO X
Supplier Device Package: 35 micro-X
Noise Figure (dB Typ @ f): 1.3dB ~ 3dB @ 1GHz ~ 4GHz
Frequency - Transition: 8GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 8V
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 60mA
Power - Max: 500mW
Gain: 10dB ~ 18.5dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD (35 micro-X)
Packaging: Bulk
Description: RF TRANS NPN 12V 8GHZ 35 MICRO X
Supplier Device Package: 35 micro-X
Noise Figure (dB Typ @ f): 1.3dB ~ 3dB @ 1GHz ~ 4GHz
Frequency - Transition: 8GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 8V
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 60mA
Power - Max: 500mW
Gain: 10dB ~ 18.5dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD (35 micro-X)
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AT-41435G |
|
Hersteller: Broadcom / Avago
RF Bipolar Transistors Transistor Si
RF Bipolar Transistors Transistor Si
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH