BBY40,215 NXP USA Inc.
Hersteller: NXP USA Inc.
Description: DIODE VHF VAR CAP 30V SOT-23
Capacitance Ratio: 6.5
Voltage - Peak Reverse (Max): 30 V
Part Status: Active
Supplier Device Package: SOT-23 (TO-236AB)
Capacitance Ratio Condition: C3/C25
Capacitance @ Vr, F: 6pF @ 25V, 1MHz
Operating Temperature: -55°C ~ 125°C (TJ)
Diode Type: Single
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.27 EUR |
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Technische Details BBY40,215 NXP USA Inc.
Description: DIODE VHF VAR CAP 30V SOT-23, Capacitance Ratio: 6.5, Voltage - Peak Reverse (Max): 30 V, Part Status: Active, Supplier Device Package: SOT-23 (TO-236AB), Capacitance Ratio Condition: C3/C25, Capacitance @ Vr, F: 6pF @ 25V, 1MHz, Operating Temperature: -55°C ~ 125°C (TJ), Diode Type: Single, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote BBY40,215 nach Preis ab 0.38 EUR bis 0.86 EUR
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BBY40,215 | Hersteller : NXP USA Inc. |
Description: DIODE VHF VAR CAP 30V SOT-23 Capacitance Ratio: 6.5 Voltage - Peak Reverse (Max): 30 V Part Status: Active Supplier Device Package: SOT-23 (TO-236AB) Capacitance Ratio Condition: C3/C25 Capacitance @ Vr, F: 6pF @ 25V, 1MHz Operating Temperature: -55°C ~ 125°C (TJ) Diode Type: Single Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
auf Bestellung 5894 Stücke: Lieferzeit 10-14 Tag (e) |
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| BBY40,215 | Hersteller : NXP |
SOT-23 Група товару: Діоди та діодні збірки Од. вим: шт |
Produkt ist nicht verfügbar |
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BBY40,215 | Hersteller : NXP Semiconductors |
Varactor Diodes VHF VAR CAP 30V |
Produkt ist nicht verfügbar |
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BBY40,215 | Hersteller : NXP |
Category: Diodes - others Description: Diode: varicap; 30V; 20mA; SOT23; single diode; reel,tape; Ir: 20nA Type of diode: varicap Mounting: SMD Max. off-state voltage: 30V Load current: 20mA Semiconductor structure: single diode Case: SOT23 Kind of package: reel; tape Features of semiconductor devices: RF Capacitance: 4.3...32pF Leakage current: 20nA |
Produkt ist nicht verfügbar |