BC307B LGE
Hersteller: LGE
Transistor PNP; 460; 350mW; 45V; 100mA; 280MHz; -55°C ~ 150°C; Replacement: BC557B; BC307BRL1G; BC307B TBC307b
Anzahl je Verpackung: 1000 Stücke
auf Bestellung 2000 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 0.047 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BC307B LGE
Description: TRANS PNP 45V 0.1A TO92, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 Long Body, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V, Frequency - Transition: 280MHz, Supplier Device Package: TO-92 (TO-226), Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 45 V, Power - Max: 350 mW.
Weitere Produktangebote BC307B nach Preis ab 0.07 EUR bis 0.38 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|
BC307B | Hersteller : ON Semiconductor |
Trans GP BJT PNP 45V 0.1A 350mW 3-Pin TO-92 T/R |
auf Bestellung 19100 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||
|
BC307B | Hersteller : onsemi |
Description: TRANS PNP 45V 0.1A TO92Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 280MHz Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 350 mW |
auf Bestellung 19100 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||
|
BC307B | Hersteller : Fairchild Semiconductor |
Description: TRANS PNP 45V 0.1A TO-92-3Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V Frequency - Transition: 130MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 500 mW |
auf Bestellung 1177 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||
|
BC307B | Hersteller : onsemi |
Description: TRANS PNP 45V 0.1A TO92Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 280MHz Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 350 mW |
Produkt ist nicht verfügbar |
|||||||
| BC307B | Hersteller : Diodes Incorporated |
Bipolar Transistors - BJT |
Produkt ist nicht verfügbar |
||||||||
|
BC307B | Hersteller : onsemi |
Bipolar Transistors - BJT 100mA 50V PNP |
Produkt ist nicht verfügbar |



