BC33725TFR ON Semiconductor
| Anzahl | Preis |
|---|---|
| 2299+ | 0.063 EUR |
| 6000+ | 0.059 EUR |
| 10000+ | 0.057 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BC33725TFR ON Semiconductor
Description: TRANS NPN 45V 0.8A TO-92-3, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V, Frequency - Transition: 100MHz, Supplier Device Package: TO-92-3, Current - Collector (Ic) (Max): 800 mA, Voltage - Collector Emitter Breakdown (Max): 45 V, Power - Max: 625 mW.
Weitere Produktangebote BC33725TFR nach Preis ab 0.066 EUR bis 0.48 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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BC33725TFR | ON Semiconductor |
Trans GP BJT NPN 45V 0.8A 625mW 3-Pin TO-92 T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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BC33725TFR | ON Semiconductor |
Trans GP BJT NPN 45V 0.8A 625mW 3-Pin TO-92 T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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BC33725TFR | ON Semiconductor |
Trans GP BJT NPN 45V 0.8A 625mW 3-Pin TO-92 T/R |
auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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BC33725TFR | ON Semiconductor |
Trans GP BJT NPN 45V 0.8A 625mW 3-Pin TO-92 T/R |
auf Bestellung 16000 Stücke: Lieferzeit 14-21 Tag (e) |
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BC33725TFR | ON Semiconductor |
Trans GP BJT NPN 45V 0.8A 625mW 3-Pin TO-92 T/R |
auf Bestellung 27881 Stücke: Lieferzeit 14-21 Tag (e) |
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BC33725TFR | ON Semiconductor |
Trans GP BJT NPN 45V 0.8A 625mW 3-Pin TO-92 T/R |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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BC33725TFR | Fairchild Semiconductor |
Description: TRANS NPN 45V 0.8A TO-92-3Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 625 mW |
auf Bestellung 16000 Stücke: Lieferzeit 10-14 Tag (e) |
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BC33725TFR | onsemi |
Description: TRANS NPN 45V 0.8A TO-92-3Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 625 mW |
auf Bestellung 42000 Stücke: Lieferzeit 10-14 Tag (e) |
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BC33725TFR | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 45V; 0.8A; 0.625W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.625W Case: TO92 Formed Current gain: 160...400 Mounting: THT Kind of package: reel; tape Frequency: 100MHz |
auf Bestellung 1183 Stücke: Lieferzeit 14-21 Tag (e) |
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BC33725TFR | onsemi |
Bipolar Transistors - BJT NPN Si Transistor Epitaxial |
auf Bestellung 7143 Stücke: Lieferzeit 10-14 Tag (e) |
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BC33725TFR | onsemi |
Description: TRANS NPN 45V 0.8A TO-92-3Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 625 mW |
auf Bestellung 43618 Stücke: Lieferzeit 10-14 Tag (e) |
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| BC33725TFR |
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Hersteller: ON Semiconductor
Trans GP BJT NPN 45V 0.8A 625mW 3-Pin TO-92 T/R
Trans GP BJT NPN 45V 0.8A 625mW 3-Pin TO-92 T/R
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 6000+ | 0.066 EUR |
| BC33725TFR |
![]() |
Hersteller: ON Semiconductor
Trans GP BJT NPN 45V 0.8A 625mW 3-Pin TO-92 T/R
Trans GP BJT NPN 45V 0.8A 625mW 3-Pin TO-92 T/R
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 6000+ | 0.067 EUR |
| BC33725TFR |
![]() |
Hersteller: ON Semiconductor
Trans GP BJT NPN 45V 0.8A 625mW 3-Pin TO-92 T/R
Trans GP BJT NPN 45V 0.8A 625mW 3-Pin TO-92 T/R
auf Bestellung 18000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 7264+ | 0.075 EUR |
| 10000+ | 0.066 EUR |
| BC33725TFR |
![]() |
Hersteller: ON Semiconductor
Trans GP BJT NPN 45V 0.8A 625mW 3-Pin TO-92 T/R
Trans GP BJT NPN 45V 0.8A 625mW 3-Pin TO-92 T/R
auf Bestellung 16000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 7264+ | 0.075 EUR |
| 10000+ | 0.066 EUR |
| BC33725TFR |
![]() |
Hersteller: ON Semiconductor
Trans GP BJT NPN 45V 0.8A 625mW 3-Pin TO-92 T/R
Trans GP BJT NPN 45V 0.8A 625mW 3-Pin TO-92 T/R
auf Bestellung 27881 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 7264+ | 0.075 EUR |
| 10000+ | 0.066 EUR |
| BC33725TFR |
![]() |
Hersteller: ON Semiconductor
Trans GP BJT NPN 45V 0.8A 625mW 3-Pin TO-92 T/R
Trans GP BJT NPN 45V 0.8A 625mW 3-Pin TO-92 T/R
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 7264+ | 0.075 EUR |
| 10000+ | 0.066 EUR |
| BC33725TFR |
![]() |
Hersteller: Fairchild Semiconductor
Description: TRANS NPN 45V 0.8A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
Description: TRANS NPN 45V 0.8A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4819+ | 0.09 EUR |
| BC33725TFR |
![]() |
Hersteller: onsemi
Description: TRANS NPN 45V 0.8A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
Description: TRANS NPN 45V 0.8A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
auf Bestellung 42000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 0.1 EUR |
| 4000+ | 0.089 EUR |
| BC33725TFR |
![]() |
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 160...400
Mounting: THT
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 160...400
Mounting: THT
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 1183 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 228+ | 0.31 EUR |
| 376+ | 0.19 EUR |
| 595+ | 0.12 EUR |
| 682+ | 0.1 EUR |
| 816+ | 0.088 EUR |
| 1000+ | 0.077 EUR |
| BC33725TFR |
![]() |
Hersteller: onsemi
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
auf Bestellung 7143 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 0.48 EUR |
| 10+ | 0.29 EUR |
| 100+ | 0.18 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.12 EUR |
| 2000+ | 0.092 EUR |
| BC33725TFR |
![]() |
Hersteller: onsemi
Description: TRANS NPN 45V 0.8A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
Description: TRANS NPN 45V 0.8A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
auf Bestellung 43618 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 38+ | 0.48 EUR |
| 61+ | 0.29 EUR |
| 100+ | 0.18 EUR |
| 500+ | 0.13 EUR |
| 1000+ | 0.12 EUR |






